MOS Gilbert Cell Mixer
MOS Gilbert Cell Mixer
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E-mail: [email protected]
1 ABSTRACT
3 MIXER DEFINITIONS
Frequency translation in a system, is performed by a
non-linear device known as a mixer. There are vari-
(1) Conversion Gain: This is the ratio (in dB) between
ous topographies from simple single ended, single
the IF signal (usually the difference frequency between
balanced mixers to more complicated double & triple
the RF and LO signals) and the RF signal.
balanced mixers that provide better isolation from
the Local Oscillator (LO) and spurious.
(2) Noise Figure: Noise figure is defined as the ratio of
The most popular double-balanced mixer used in SNR at the IF port to the SNR of the RF port.
RFIC designs is the Gilbert Cell mixer.
(i) Single sideband (SSB): This assumes the only
The design of this mixer is the subject of this paper.
noise from the signal ω1 and not the image frequency
ω1-1, this would be the case if a band-pass filter was
2 INTRODUCTION added in front of the mixer eg.
Mixers are non-linear devices used in systems to trans- RF = 1694 MHz, LO = 1557MHz to give an IF of
late (multiply) one frequency to another. All mixer types 137MHz.
work on the principle that a large Local Oscillator (LO)
RF drive will cause switching/modulating the incoming Also an image IF will add to 137MHz from an RF of
Radio Frequency (RF) to the Intermediate Frequency 1420MHz ie 1557MHz-1420MHz = 137MHz
(IF).
(ii) Double sideband (DSB): In DSB both side-
The multiplication process begins by inputting two sig- bands are available thus it has twice as much power
nals: available at the IF port compared to the SSB signal. As a
result, it’s conversion loss is 3dB less than that of an
SSB signal, as shown:
a = Asin(ω 1t + φ1 ) and signal b = Bsin(ω 2 t + φ 2 )
P(IF) DSB = 2 P(IF) SSB and conversion loss is given by
The resulting multiplied signal will be:
AB
=- [cos((ω1.t + φ1 ) + (ω 2 .t + φ2 )) − cos((ω1.t + φ1 ) − (ω 2 .t + φ2 ))]
2
AB
=- [cos((ω1 + ω 2 )t + (φ1 + φ2 )) − cos((ω1 − φ1 )t − (φ1 − φ2 ))]
2
1dB Compression
T
Fm = 1 + (LC - 1) point (dBm) (Output)
To
Where T = temperatu re of mixer,
To = room temperatu re (273 °K)
⎛ (LC )SSB ⎞ T
Therefore, Fm (DSB) = 1 + ⎜ − 1⎟
⎝ 2 ⎠ To
1dB
At room temperatu re, ie T = To
Fm (DSB) =
(LC )SSB in other word s
RF Input Power 1dB Compression point
(dBm) (dBm) (Input)
2
(3) Isolation: These parameters define how much signal For typical double balanced mixers this figure is ~ 6dB
leakage will occur between pairs of ports. ie RF to below the LO power level. (So performance can be im-
LO,LO to IF and RF to IF. So if for example RF to IF proved by overdriving the LO port).
isolation was specified at 35dB this means that the RF at
the IF port will be 35dB lower than the RF applied to RF The 1dB compression point gives rise to the dynamic
port. range of the mixer, which is the difference between the
1dB compression point and the minimum discernable
(4) Linearity signal (MDS – this is dependant on the noise floor of the
device).
(i) 1dB Compression point: Like other non-resistive
networks, a mixer is amplitude-nonlinear above a certain (ii) Intermodulation (IM3) performance: This pa-
input level resulting in a gain compression characteristic rameter is the same as specified for amplifiers and meas-
as shown in Figure 1. ured in a similar way. It is measured by applying two
closely spaced input tones at frequencies F1 and F2.
Above this point the If fails to track the RF input power
level – normally a 1dB rise in RF power will result in a Third order products from the mixing of these tones with
1dB rise in the IF power level. The 1dB compression the LO (at frequency FLO) occur at frequencies given by:
point is measured by plotting incident RF power against (2F1±F2)±FLO and (2F2±F1)±FLO. In the case of the
IF power as shown in the figure above. mixer, the third order products of most interest are (2F1-
F2)- FLO and (2F2-F1)-FLO as they fall in, or close to the
Most mixers have the 1dB compression point specified IF band.
at the input ie the single-tone input signal level at which
the output of the mixer has fallen 1dB below the ex- The IM3 performance is often summarised by giving the
pected output level. 3rd Order Intercept point (IM3 Intercept) as shown in
the compression characteristic of Figure 2, where the
IM3, IM5 plots intersect with the extrapolated gain plot
(blue dotted line). As a rule of thumb the IM3 intercept
point is approximately 10dB above the 1dB compression
point.
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This figure of merit gives an indication of the mixer’s This results in the following equations for 1dB gain
signal handling capability. In particular it provides an compression point and IM3 [1].
indication of the levels of third order products a mixer is
likely to produce under multi-tone excitation. V 2
I =W .C . od
DSAT vsat ox V + E .L
od sat
IF Output 2V µ
E = sat Where µ = o
Power sat eff
µ 1 + ϑ.V
(dBm) eff od
Fundamental RF
Input IM5 Gradient
2
=1:5 ⎛ µ .Vod ⎞⎛ µ .V ⎞
V .L
P1dB ~ 0.29 sat Vod ⎜ 1 + 1 ⎟⎜ 1 + 1 od ⎟ - (1)
µ .Rs ⎜ 4 V .L ⎟ ⎜ 2 Vsat .L ⎟⎠
1 ⎝ sat ⎠⎝
2
RF Input Power 8 Vsat .L ⎛ µ .Vod ⎞⎛ µ .V ⎞
(dBm) 1dB Compression point PIIP3 ~ Vod ⎜1 + 1 ⎟⎜1 + 1 od ⎟ - (2)
3 µ .Rs ⎜ 4Vsat .L ⎟⎠⎜⎝ 2Vsat .L ⎟⎠
(dBm) (Input) 1 ⎝
M5
The most popular active, double balanced mixer topog-
raphy in RFIC design is the Gilbert Cell mixer, the cir-
cuit of which is shown in Figure 3. This type of mixer Differential LO Input M6
M7
MOSFets M4 to M7 form a multiplication function, Figure 3 Basic circuit of the Gilbert Cell Double
multiplying the linear RF signal current from M2 and balanced mixer (DBM)
M3 with the LO signal applied across M4 to M7 which
provide the switching function.
The voltage gain of the mixer with source degeneration
is given by:
M2 and M3 provide +/- RF current and M4 & M7
switch between them to provide the RF signal or the
inverted RF signal to the left hand load. M5 & M7 ⎛ ⎞
V ⎜ ⎟
switch between them for the right hand load. RF ≈ ⎜
2 R L ⎟
V π ⎜ Rs + 1 ⎟
The two load resistors form a current to voltage trans- IF ⎜ ⎟
⎝ gm ⎠
formation giving differential output IF signals.
The gain of the first stage is determined by gm given by:
The design stages for the basic mixer design with high Table 2-1 Required specification for the Bluetooth
linearity are: front end Gilbert Cell mixer
(1) Select a value for Rs. If we start with the LNA We designed the differential LNA to have 50-ohm input
design , Rs will be realized by an inductor Ls. and output impedances, hence the input match of the
(2) Using the design equations of section 4(ii) de- mixer will be 50 ohms also. The 500 ohm output imped-
cide on the IM3 value required to calculate the ance of the mixer is designed to match to an ‘off-chip’
voltage overdrive (Vgs-VT). – This is part of filter, and is most easily achieved by having 500-ohm
the LNA design process. mixer load resistors.
(3) Calculate gm and check for compliance of
mixer gain with a suitable load resistance. We choose an initial Rs value of 10 ohms and using the
(4) Determine LO switching W by selecting mini- CMOS14 process results in the following analysis:
mum L allowed and assuming that the over-
drive voltage (Vgs-VT) will be between 0.2 and Using the spice model data for the Agilent CMOS14 0.5um
0.4V. we have:
L = 0.6um,
µ0 = 433 cm^2/(V*s),
To M4 to M7 θ = 0.5,
Rs = 10 ohms,
VT = 0.67V
Vsat = 1.73E5 m/s
M2 M3
First convert numbers to metric format:
Differential RF Input
Rs Rs
µ0 = 433 cm^2/(V*s), = 0.433 m^2/(V*s
L = 0.6um, = 0.6E-6m.
Table 2-2 Calculated 1dB compression point & 3rd order intercept point.
40
35
30
Input 1dB comp (dBm)
25
20
15
10
0
0 1 2 3 4 5
Vod = Vgs-Vt (Volts)
Figure 5 Plot of Input referred 3rd order intercept point (IIM3 dBm) with voltage overdrive (Vgs-VT)
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With voltage gain goal of 7.5dB we can calculate gm [2] Now with gm calculated we can W (Assuming we take
the minimum gate length to be 0.6um and assume a cur-
⎛ ⎞ rent of 3mA) ie.
⎜ ⎟ --- (1)
2 ⎜ RL ⎟
Conversion Gain C.G ≈
π ⎜ 1 ⎟ W
⎜ Rs + ⎟ g m 2 = 2.Kp. .IDS re - arrange to get W
⎝ gm ⎠ L
the mixer input – typically we design this for 50 ohms. 2.Kp.IDS 2 x 171E − 6 x 3E − 3
Eox 3.46 * 8.85E −12 We can now run our first simulation by assuming all
Cox = = = 3.37E - 3
TOX 9.06E − 9 devices have W = 233um and L = 0.6um, tail current of
6mA, source resistors of 10 ohms and load resistors of
In this case W would be: 500 ohms.
1
W ≈
opt 3 x 2.5E 9 x2π x0.6E -6 x 3.37E −3 x50
5.1 BALUN DESIGN [5]
For the purposes of the simulation we need to convert
W ≈ 315um the differential inputs and outputs of the mixer to single
opt
For our example however, we will be designing the ended source and load impedances. The device that
mixer to have a specific gain and output load impedance, achieves this balanced to un-balanced transformation is
therefore rearranging the earlier equation (1) we can known as a ‘Balun’.
obtain gm ie
A typical balun circuit is shown in Figure 6, where the
−1 ‘Zin’ block allows the input impedance to be measured,
⎡ 2 RL ⎤
gm = ⎢ . − Rs⎥ resulting in the correct value of 50 ohms.
⎣ π Vgain ⎦
In this case the impedance transformation is 1:4 ie 50
−1 ohms to a differential impedance of 200 ohms.
⎡ 2 500 ⎤
gm = ⎢ . − 10 ⎥ = 0.0199
⎣π 5.62 ⎦ If we wish to add a load to each port then they will be
half this at 100 ohms – see example
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S-PARAMETERS
S-PARAMETERS
S_Param
SP1 S_Param
Center=1.0 GHz SP1
Center=1.0 GHz
2
Span=1 GHz 2
Span=1 GHz R
1
1
-
T1
R1
Term R 1
1
-
T1 R=100 Ohm
Term1 R1 Term
Num=1 1
R=100 Ohm Term1
Z=50 Ohm Num=1 1
1
Z=50 Ohm
-
T2
3 1
-
3 T2
N TF3 3
N TF3 R
Zin TF1 R2
Zin TF1
Zin T1=1.414 R=100 Ohm
Zin T1=1
Zin1 T2=1.414
Zin1 T2=1
Zin1=zin(S11,PortZ1)
Zin1=zin(S11,PortZ1)
vcc
V_DC
I_Probe
SRC1
ID
Vdc=2.5 V
Var
Eqn VAR
VAR1
L=0.6 R R
Rs=10 R3 R4 Port
Rload=500 R=Rload Ohm R=Rload Ohm IF_Plus
W=231 Num=5
LO_W=231
RF_W=231
MOSFET_NMOS MOSFET_NMOS
MOSFET3 MOSFET4
Port Model=cmosn Model=cmosn
MOSFET_NMOS Length=L um
LO_Plus Length=L um MOSFET_NMOS Port
Num=1 Width=LO_W um MOSFET8 MOSFET7 Width=LO_W um IF_Minus
Model=cmosn vee vee Model=cmosn Num=6
vee Length=L um Length=L um vee
Width=LO_W um Width=LO_W um
Var
Port v2 Eqn VAR
LO_Minus VAR3
Num=2 Ibias=6
MOSFET_NMOS vcc
MOSFET_NMOS MOSFET6 I_DC
MOSFET1 Model=cmosn SRC7
Model=cmosn Length=L um Idc=(Ibias/10) mA
vg vee vee
Length=L um Width=RF_W um
R Width=RF_W um R
R1 R2
R=10k R=10k
R R
R5 R6 MOSFET_NMOS
C
R=Rs Ohm R=Rs Ohm C MOSFET10
C2
C5 Model=cmosn
C=10 pF
C=10 pF Length=L um
MOSFET_NMOS Width=(W/10) um
Port
Port MOSFET9 vee RF_Minus
RF_Plus Model=cmosn
Num=4
Num=3 Length=L um vee
Width=W um
V_DC vee
SRC4
Vdc=-2.5 V
BSIM3_Model
cmosn
NMOS=yes Wln=1 Cgso=2.79e-10 K3=68.279056 Vsat=1.174604e5 Eta0=0.1178659 Uc1=-5.6e-11
Idsmod=8 Ww=0 Cgdo=2.79e-10 K3b=1.252205 A0=0.9059229 Etab=2.603903e-3 Kt1=-0.11
Version=3.1 Wwn=1 Cgbo=2e-9 W0=1e-5 Keta=3.997018e-3 Dsub=0.751089 Kt2=0.022
Mobmod=1 Wwl=0 Xpart=0.5 Nlx=5.28517e-8 Lketa=-0.0143698 Drout=0.0428851 Em=4.1e7
Capmod=2 Tnom=27 Dwg=-7.483283e-9 Dvt0=6.5803089 Wketa=-5.792854e-3 Pclm=0.7319137 Xw=0
Rsh=2.8 Tox=1.01e-8 Dwb=1.238214e-8 Dvt1=0.9107896 Ags=0.1450882 Pdiblc1=2.091364e-3 Xl=-1e-7
Js=0 Cj=5.067009e-4 Nch=1.7e17 Dvt2=-0.1427458 Pags=0.0968 Pdiblc2=9.723614e-4
Lint=1.097132e-7 Mj=0.7549569 Vbm=-3.0 Ua=1e-12 B0=1.648829e-6 Pdiblcb=-0.5
Ll=0 Cjsw=4.437149e-10 Xj=1.5e-7 Ub=1.582544e-18 B1=5e-6 Pscbe1=2.541131e10
Lln=1 Mjsw=0.1 U0=433.6065339 Uc=1.831708e-11 Voff=-0.0850186 Pscbe2=5e-10
Lw=0 Pb=0.99 Vth0=0.6701079 Delta=0.01 Nfactor=1.2410485 Pvag=0.1945781
Lwn=1 Pbsw=0.99 Pvth0=8.691731e-3 Rdsw=1.28604e3 Cdsc=2.4e-4 Ute=-1.5
Lwl=0 Cjswg=2.2346e-10 K1=0.825917 Prdsw=-33.9337286 Cdscb=0 At=3.3e4
Wint=2.277646e-7 Mjswg=0.1 K2=-0.0316751 Prwg=0.0182608 Cdscd=0 Ua1=4.31e-9
Wl=0 Pbswg=0.99 Pk2=9.631217e-3 Prwb=-0.0586598 Cit=0 Ub1=-7.61e-18
Figure 9 ADS schematic of the Gilbert Cell Mixer circuit. For this simulation the gates of the RF MOSFETS 1 & 6 are
grounded (via 10K resistors that block any RF signal) and to ensure correct bias the tail MOSFET 9 is connected to a
negative supply. The tail current is set by the ‘bias’ variable – in this case the controlling MOSFET 10 has a width =
W/10, hence the bias = bias/10. The RF, LO and IF ports are terminated with a port so that the circuit will appear as a 6
port device when used in simulations as a sub-circuit..
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HARMONIC BALANCE
HarmonicBalanc
HB1
MaxOrder=5
Freq[1]=LO_freq Basic_Gilbert_Cel Balun3Port
Freq[2]=RF_fre lX1 CMP2
Balun4Port
Order[1]=5 CMP3
Order[2]=1 IF_Plus
InputFreq=RF_fre LO_Plus
IF_Minus
Vout
NLNoiseMode=ye Term
FreqForNoise=IF_fre
RF_Minus
LO_Minus
Term3
NoiseNode[1]="Vout RF_Plus
Num=3
"UseKrylov=yes Z=500 Ohm
EquationName[1]
V_DC
SRC6
Var VAR Vdc=vg V
Eqn VAR6 vin
P_1Tone P_1Tone
LO_pwr=5 PLO
Balun3Port PRF
vg=1.0 Num=1 CMP1 Num=2
LO_freq=2250 Z=50 Ohm Z=50 Ohm
MH
RF_freq=2500 P=dbmtow(LO_pwr) DC
P=dbmtow(RF_pwr)
IF_freq=250
MH Freq=LO_freq
DC Freq=RF_freq
RF_pwr=-30
MH
dB DC1
Figure 10 Harmonic balance simulation of the Gilbert Cell Mixer. As the inputs and outputs are differential balun trans-
formers have been added to convert to single ended inputs and outputs. The 500-ohm load Term3 correctly terminates
the mixer 500-ohm output impedance. The RF frequency is set to 2500MHz (RF_freq), Local oscillator frequency to
2250MHz (LO_freq) , resulting in an IF frequency of 250MHz (IF_Freq).. For correct switching of the LO transistors
the variable vg needs to be set to 1V – running the simulation this gives Vgs across the switching transistor of ~ 1V.
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freq Mix
The resulting plots of DSB noise figure and conversion LO_pwr=-20.000, Mix(1)
0.0000 Hz 0
gain vs local oscillator input power are shown in 250.0MHz 0
(Figure 11). 2.000GHz 1
2.250GHz 1
DSB Noise Figure 2.500GHz 1
nf(3)[0]
4.250GHz 2
30 4.500GHz 2
4.750GHz 2
6.500GHz 3
25 m2 6.750GHz 3
LO_pwr= 5.000 7.000GHz 3
20 nf(3)[0]=9.277 8.750GHz 4
9.000GHz 4
9.250GHz 4
15 11.00GHz 5
m2 11.25GHz 5
10 11.50GHz 5
LO_pwr=-20.000, Mix(2)
5 0.0000 Hz 0
-20 -15 -10 -5 0 5 10 250.0MHz 1
2.000GHz -1
LO_pwr 2.250GHz 0
2.500GHz 1
Conversion Gain 4.250GHz -1
4.500GHz 0
15 4.750GHz 1
m1 6.500GHz -1
10 6.750GHz 0
7.000GHz 1
5
Meas
MeasEqn
HARMONIC BALANCE Eqn
meas1
HarmonicBalance Vout_tone=dBm(mix(Vout,{0,1}))-RF_pwr[0]
HB1 Var
VAR
Eqn
Freq[1]=LO_freq VAR6
Order[1]=5 LO_pwr=5
SS_MixerMode=yes vg=1.0
SS_Freq=IF_freq LO_freq=2250 MHz
UseAllSS_Freqs=yes IF_freq=250 MHz
MergeSS_Freqs=yes RF_pwr=-30 _dBm Basic_Gilbert_Cell Balun3Port
InputFreq=LO_freq+IF_freq X1 CMP2
Balun4Port
FreqForNoise=IF_freq CMP3
NoiseNode[1]="Vout" IF_Plus
Figure 12 This ADS Harmonic simulation is setup to sweep the Local oscillator power (LO_pwr) from –20dBm to
+10dBm in 1dBm steps. The RF input frequency = LO_freq (2250MHz) + IF_freq (250MHz) = 2500MHz (Set to a power
(RF_pwr) of –30dBm. This simulation is slightly different to the one shown in Figure 10 in that upper sideband is se-
lected (by setting the power variable P_USB in ‘PRF one tone source). In the Harmonic simulator box, setting
SS_Mixer_Mode to ‘yes’ causes the simulator to solve for all small-signal mixer sidebands. This default option requires
more memory but delivers more accurate results. The measurement equation Vout_tone selects the IF frequency (in
dBm) using the mix function then substracts the RF_pwr (at fundamental frequency) to give conversion gain. In order to
select the IF frequency at 250MHz we need to know what the mix terms are, the first value 0 is mix(1) and the second
value 1 is mix(2) if you plot a table of mix(1) and mix(2) you will find this equates to an output carrier at 250MHz – this
is shown in Table 2-3.
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V_DC
SRC6
P_1Tone Vdc=vg V
PORT1 P_1Tone
Num=1 Var VAR
Eqn PORT2
VAR6 Balun3Port
Z=50 Ohm Num=2
P=dbmtow(LOPwr) vg=0.4 CMP1
Z=50 Ohm
Freq=Flo MHz P=dbmtow(RFPwr)
Freq=Frf MHz
Figure 15 ADS simulation to derive the gain compression characteristic of the mixer. The P_IF function produces and
ideal straight line of linear gain. Thus when the compressed gain of the mixer is added to the graph, the point at which
the two lines diverge by 1dB is the gain compression point. To simply the process of finding the gain compression point
the ‘Gain Compression’ simulation block is added to the schematic. The two Input frequencies are declared ie RF & LO,
together with the output frequency Fif. The ports have also to be defined, in this case the input port (RF) is port2, and
the output port (IF) is port 3.
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16 of 20
VAR Var
Eqn
HARMONIC BALANCE VAR1
HarmonicBalance RF_freq=2500 MHz
HB2 Rs=20
MaxOrder=4 vg=0.9
Freq[1]=LO_freq LO_freq=2250 MHz BPF_Chebyshev
Freq[2]=RF_freq+fspacing/2 IF_freq=RF_freq-LO_freq BPF3
Freq[3]=RF_freq-fspacing/2 fspacing=100kHz Fcenter=IF_freq
Order[1]=3 RF_pwr = -30 dBm BWpass=5 MHz
Order[2]=3 Basic_Gilbert_Cell Balun3Port Apass=0.5 dB
Order[3]=3 X1 CMP2 Ripple=0.1 dB
UseKrylov=yes N=3
IF_Plus
LO_Plus
IF_Minus
RF_Minus
Vout
P_1Tone LO_Minus
RF_Plus
PORT3
Num=3 Balun4Port Term
Z=50 Ohm CMP3 Term3
P=dbmtow(5) Num=3
Freq=LO_freq Z=500 Ohm
Balun3Port
V_DC CMP1
SRC6
Vdc=vg V P_nTone
PORT1
Pni
IP3out
Num=1
IP3out Z=50 Ohm
P0
Figure 16 ADS simulation to determine the 3rd order intercept point of the mixer. In this simulation two RF carriers are
set to one 50kHz below the RF_freq of 2500MHz and the other one 50kHz above the RF_freq. The spacing of the carri-
ers set by fspacing is therefore 100kHz. The clever part of the simulation is the IP3out where the IM3 output intercept
point (dBm) is calculated from the two IF frequencies at 250MHz + 50KHz and –50KHz. Note the filter is added to the
IF to filter out the effects of RF breakthrough.
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Luckily noise and IIM3 are fairly independent of each There are a number of issues when using an inductor Ls
other as IIM3 is not particularly sensitive to L and W, so one being the circuit will now be more frequency de-
important for noise optimization is not a variable of pendant. A second issue is that inductors used in CMOS
IIM3! tend to have low Quality (Q) factors – typically 2 to 3.
Thirdly the addition of the source inductor will have a
It is of course possible to improve the linearity of the significant effect on the input impedance (Re) and will
mixer by adding voltage follower buffer stages on each need to be checked to ensure the impedance is not nega-
output, this will have the added advantage in that the tive (which may cause instability!).
frequency response of the mixer will not be altered by
the following stage input capacitance (assumimg induc- We can set up a S-parameter simulation to alter the
tive loading!). value of Ls to determine the input resistive impedance.
To ensure the simulation will work the switching tran-
We can now compare our simulation results to that of sistors are biased on using two voltage sources.
the specification. The table below (Table 4) shows the
original key parameters. The S-parameter simulation is shown in Figure 18 with
the resulting impedance plot shown in Figure 17.
Parameter Specification Predicted Units
Frequency 2.45 to 2.85 2.45 to 2.85 GHz
Noise Figure < 10 10.3 dB m1
IM3 Intercept >20 21.2 dBm real(Zin1) freq=2.503GHz
Point (Intput) real(Zin1)=51.008
Voltage Gain >8 8.2 dB Ls=1.080000
120
Power consump- <100 90 mW
tion
100
Source impedance 50 50 ohms
Load impedance 500 500 ohms 80
Voltage Supply ± 2.5 ± 2.5 V
60
m1
Table 4 Predicted performance of the mixer against 40
the original specification.
20
7 DESIGN COMPLETION 0
The design so far, generally meets the specification
2.0 2.2 2.4 2.6 2.8 3.0
given and the design process has shown how gain, noise
figure and linearity are interdependent and thus trade freq, GHz
offs need to be made at the beginning of the design Figure 17 Input impedance result from the simulation
process. In particular the fact reducing the W/L ratio shown in Figure 18. The value of the source de-generating
increase the overdrive voltage and hence linearity but inductor (Ls) has been varied between 0.5nH and 5nH. We
reduces the gain and increases the noise figure! see that with an inductance of ~1.1nH the input impedance
is 50 ohms.
There are a number of things that can be done to im-
prove the design including replacing Rs with a lossless With a source de-generation inductor of value 1.1nH
inductor, using separate tail current sources. results in an input impedance of ~ 50 ohms (Rs
=18ohms). If 100 ohm input impedance is required (If
7.1 LOSSLESS SOURCE DEGENERATION connecting to a balun) then Ls = 3nH.
We saw how the introduction of the source resistor Rs
greatly improved the linearity of the mixer. However, The simulation shows that the mixer circuit is stable as
using a resistor will cause a voltage drop and hence an the value of Re is positive and NOT negative (the result-
needed increase in the voltage rails to ensure the devices ing input return loss S11 is negative as it should be)
remain in saturation. Another important problem with
using a resistor is the noise it will generate.
PARAMETER SWEEP
ParamSweep
V_DC
Sweep1
SweepVar="Ls" SRC7
SimInstanceName[1]="SP1" Vdc=vg V
SimInstanceName[2]=
SimInstanceName[3]=
SimInstanceName[4]= Basic_Gilbert_Cell Balun3Port
SimInstanceName[5]= X1 CMP2
SimInstanceName[6]=
Start=0.1 IF_Plus
Stop=5 LO_Plus
Vout
IF_Minus
Step=
RF_Minus Term
LO_Minus
RF_Plus Term2
N Num=2
Zin Z=500 Ohm
Zin
Zin1 V_DC
Zin1=zin(S11,PortZ1) SRC6
Vdc=vg-0.5 V
Var VAR
Eqn
VAR6 Term
LO_pwr=5
S-PARAMETERS Term1
Ls=1 Term Num=1
Rs=18 S_Param Term3 Z=50 Ohm
vg=1.0 SP1 Num=3
LO_freq=2250 MHz Center=2.5 GHz Z=50 Ohm
IF_freq=250 MHz Span=1 GHz
RF_pwr=-30 _dBm
Figure 18 S-Parameter simulation to determine the effect of varying the source de-generation inductance (Ls) on the in-
put impedance (Re). The Parameter sweep box is set to vary the variable Rs from 0.1 to 5nH and applies to the simulator
‘SP1’. This is to allow an optimum value of Ls to be used for an input match ie Ls = 1nH for 50 ohms and Ls=3nH for
100 ohms
Sheet
19 of 20
When we add an inductor we are in fact adding an in- In order to ensure a stable design (ie with no risk of os-
ductor with an added series resistance dependant on the cillation) it was highlighted that the input impedance
Q (Quality factor) of the inductor: should be checked to ensure the input impedance is posi-
tive and not negative.
ω. L Finally, an alternative design scheme was given to allow
Q = a source resistor to be used without degrading the volt-
2. R age swing capability of the mixer, by using two separate
current sources in lieu of the single ‘tail’ current source
For example at 2.5GHz the series R will be ~ 23ohms in the conventional design.
for a 5nH inductor.
vcc
V_DC
I_Probe
SRC1
ID
Vdc=2.5 V
Var
Eqn VAR
VAR1
L=0.6 R R
Rload=500 R3 R4 Port
W=220 R=Rload Ohm R=Rload Ohm IF_Plus
LO_W=270 Num=5
RF_W=150
MOSFET _NMOS
C
R C MOSFET 10
C2
R5 C5 Model=cmosn
C=10 pF vee R=Rs Ohm C=10 pF Length=L um
vee Width=(W/10) um
Port
Port
RF_Minus
MOSFET _NMOS
RF_Plus
Num=4
MOSFET 11
Num=3 MOSFET_NMOS vee
Model=cmosn MOSFET9 V_DC
Length=L um Model=cmosn SRC4 vee
Width=W um Length=L um Vdc=-2.5 V
Width=W um
BSIM3_Model
cmosn
NMOS=yes Wln=1 Cgso=2.79e-10 K3=68.279056 Vsat=1.174604e5 Eta0=0.1178659 Uc1=-5.6e-11
Idsmod=8 Ww=0 Cgdo=2.79e-10 K3b=1.252205 A0=0.9059229 Etab=2.603903e-3 Kt1=-0.11
Version=3.1 Wwn=1 Cgbo=2e-9 W0=1e-5 Keta=3.997018e-3 Dsub=0.751089 Kt2=0.022
Mobmod=1 Wwl=0 Xpart=0.5 Nlx=5.28517e-8 Lketa=-0.0143698 Drout=0.0428851 Em=4.1e7
Capmod=2 Tnom=27 Dwg=-7.483283e-9 Dvt0=6.5803089 Wketa=-5.792854e-3 Pclm=0.7319137 Xw=0
Rsh=2.8 Tox=1.01e-8 Dwb=1.238214e-8 Dvt1=0.9107896 Ags=0.1450882 Pdiblc1=2.091364e-3 Xl=-1e-7
Js=0 Cj=5.067009e-4 Nch=1.7e17 Dvt2=-0.1427458 Pags=0.0968 Pdiblc2=9.723614e-4
Lint=1.097132e-7 Mj=0.7549569 Vbm=-3.0 Ua=1e-12 B0=1.648829e-6 Pdiblcb=-0.5
Ll=0 Cjsw=4.437149e-10 Xj=1.5e-7 Ub=1.582544e-18 B1=5e-6 Pscbe1=2.541131e10
Lln=1 Mjsw=0.1 U0=433.6065339 Uc=1.831708e-11 Voff=-0.0850186 Pscbe2=5e-10
Lw=0 Pb=0.99 Vth0=0.6701079 Delta=0.01 Nfactor=1.2410485 Pvag=0.1945781
Lwn=1 Pbsw=0.99 Pvth0=8.691731e-3 Rdsw=1.28604e3 Cdsc=2.4e-4 Ute=-1.5
Lwl=0 Cjswg=2.2346e-10 K1=0.825917 Prdsw=-33.9337286 Cdscb=0 At=3.3e4
Wint=2.277646e-7 Mjswg=0.1 K2=-0.0316751 Prwg=0.0182608 Cdscd=0 Ua1=4.31e-9
Wl=0 Pbswg=0.99 Pk2=9.631217e-3 Prwb=-0.0586598 Cit=0 Ub1=-7.61e-18
Figure 19 Gilbert Cell mixer with source de-degeneration (to improve linearity) but does not degrade the voltage swing
of the mixer. The two ‘tail’ current sources need to be well matched for best performance.