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Figure 1: (A) SRAM Wafer Average Access Time Versus L (Eff) - (B) L (Eff) Versus SRAM Density Logarithmic Plot

This document contains 22 figures describing various memory technologies including SRAM, DRAM, ROM, EPROM, EEPROM, and flash memory. The figures show memory cell designs, organization, timing diagrams, sense amplifiers, decoders, and block diagrams of commercial memory chips from manufacturers like NEC, Fujitsu, Intel, and AMD. Key memory cell types shown include 6-transistor SRAM, 1-transistor and 3-transistor DRAM, NOR and NAND ROM, EPROM with UV erasure, and NAND flash memory cells.

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Kulwant Nagi
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227 views

Figure 1: (A) SRAM Wafer Average Access Time Versus L (Eff) - (B) L (Eff) Versus SRAM Density Logarithmic Plot

This document contains 22 figures describing various memory technologies including SRAM, DRAM, ROM, EPROM, EEPROM, and flash memory. The figures show memory cell designs, organization, timing diagrams, sense amplifiers, decoders, and block diagrams of commercial memory chips from manufacturers like NEC, Fujitsu, Intel, and AMD. Key memory cell types shown include 6-transistor SRAM, 1-transistor and 3-transistor DRAM, NOR and NAND ROM, EPROM with UV erasure, and NAND flash memory cells.

Uploaded by

Kulwant Nagi
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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Figure 1 : (a) SRAM wafer average access time versus L(eff).

(b) L(eff) versus SRAM density logarithmic plot.


Figure 2 : A general schematic of a SRAM memory cell.
Figure 3 : Various configuration of CMOS SRAM cells. (a) Six-transistor full
CMOS. (b) Four transistor with R-load NMOS. (c) Dual-port with double-ended
access (d) Content-addressable memory (CAM).
Figure 4 : (a) A typical SRAM basic organization schematic.
Figure 4 : (b) The storage cell array details.
(a) (b)
Figure 5 : Six-transistor CMOS SRAM cell. (a) Schematic
diagram.
Figure 6: Various SRAM circuit elements. (a) Static row decoder.
(b) Dynamic row decoder. (c) Simple write circuitry (d) Inverter
amplifier (e) Differential sense amplifier.
(a) (b)
Figure 7 : (a) Three-transistor (3-T) DRAM cell (b) One
transistor (1-T) DRAM cell.
Figure 8 : (a) Basic one-transistor storage cell with cross-coupled
latch sense amplifier (b) The associated timing diagram (c) A
DRAM differential sense amplifier showing dummy cell structure.
(a)

(b)

Figure 9 : (a) A 64 kb DRAM sense amplifier circuit showing


combination open and folded bit lines. (b) The associated timing
diagram and operating sequence.
(a)
Figure 10 : (a)Block diagram of 1 MB DRAM (NEC PD421000).
(b)

Figure 10 : (b) Chip layout


(c)

Figure 10 : (c) Cross-section of one-transistor memory cell.


Figure11 : Access timing for a 1 Mb DRAM (NEC PD421000-seriess)
Figure 12 : Block diagram of NEC PD42273 dual-port graphics
buffer.
Figure 13 : ROM cell structure. (a) NOR array (b) NAND array.
Figure 14 : Block diagram of 16Mb CMOS ROM NEC
(a)

Figure 15 : 1Mb CMOS UV EPROM Fujitsu MBM27C1028 (a)


Block diagram.
(b)

Figure 15 : 1Mb CMOS UV EPROM Fujitsu MBM27C1028 (b)


Programming waveforms.
(b)
(a)

(c)
Figure 16: A 1 Mb CMOS EPROM. (a) Sense amplifier circuit structure. (b)
Memory cell array structure. (c) Threshold monitoring program (TMP) circuit.
Figure 17 : (a) A four-transistor memory cell with read and
program transistors implanted separately. (b) Four-transistor
memory cell with differential sensing scheme.
(a) (b)

Figure 18 : A +5V only Inmos EAROM. (a) Schematic cross-


section. (b) Functional block diagram.
(a) (b)

Figure 19 : Flash memory cell structures. (a) NOR EEPROM that


requires one transistor for every contact. (b) NAND EEPROM
with 16 serially connected memory transistors per bit-line contact.
Figure 20: A 256K CMOS flash memory Intel chip block
diagram.
Figure 21: A block diagram of the AMD 4 Mb 5 V-only flash
memory.
Figure 22: Block diagram of Intel 8Mb flash EPROM

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