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Exp 4 Datasheet Diode

This document contains instructions and results for experiments involving diode characteristics and applications. It includes tables to record experimental values for forward resistance (Rf), reverse resistance (Rr), forward voltage (VD), and breakdown voltage (VBD) for silicon and germanium diodes. Graphs are shown of I-V characteristics under forward and reverse bias for each diode. The document also provides instructions and tables to record voltages and currents for a silicon diode circuit under normal operation and with the diode open or short circuited. Finally, it gives directions and tables to measure output voltage (Vo) with and without a zener diode for different load resistances (RL) in a zener diode regulator, along with instructions to plot the

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252 views5 pages

Exp 4 Datasheet Diode

This document contains instructions and results for experiments involving diode characteristics and applications. It includes tables to record experimental values for forward resistance (Rf), reverse resistance (Rr), forward voltage (VD), and breakdown voltage (VBD) for silicon and germanium diodes. Graphs are shown of I-V characteristics under forward and reverse bias for each diode. The document also provides instructions and tables to record voltages and currents for a silicon diode circuit under normal operation and with the diode open or short circuited. Finally, it gives directions and tables to measure output voltage (Vo) with and without a zener diode for different load resistances (RL) in a zener diode regulator, along with instructions to plot the

Uploaded by

maryam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Data Sheet Exp.

# 4
PART (A) : The Diode Static Characteristics:
Fill in the table below with the results you will obtain in the figures (1-5)
Diode

Rf()

VD(V)

Si

Rr()

VBD(V)

Ge
Vz =.

Ze
Notes:

VBD for the silicon is larger than 100 V so you can not get a plot from the
used curve tracer.
Rf and Rr from the slope of the curves (id &vd) >> slope=1/R=iD/VD
VD is the DC voltage for all the diodes in forward direction from (0.2 to
0.7)V.
Vz is the DC voltage of the zener diode in reverse direction from (2 to 5)V.
Germinuim break down voltage range from (15 to 30)V.

Figure (1): Silicon Diode I-V characteristics ( Bias)

Figure(2): Germanium I-V characteristics ( .Bias)

Figure(3) Germanium I-V characteristics (Bias)

Figure(4): Zener Diode I-V characteristics (Bias)

Figure(5): Zener Diode I-V characteristics (Bias)


3

PART (B):The Silicon Diode Circuit:


Normal Circuit

PSPICE

D2 short circuit

Exper.

PSPICE

Exper.

D2 open circuit
PSPICE
(Replace
R1= 100
meg
instead
of D2)

Exper.
(Replace D2
with
Open circuit)

VA(V)
VB(V)
VD1=VA-VB
VD2=VB
I (m A)

PART (C): Zener Diode Regulator:


RL()

20

180

240

800

1k

2k

3k

7k

10 k

PSPICE

Vo with
Zener
Exper.

Vo
without
Zener

Theor.

Exper.

Note :
For Vo without Zener Theoretical calculation, you will use the
equation :
=
4

1 +

Open
circuit

Plot (Vo versus RL) (Roughly)for both cases on the same graph
paper and show Vz from the plot.

Fig.1 Vo versus RL (For RL 20 to 7k)

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