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Estelar: Faculty of Engineering

This document contains a 10 question exam on electronic devices. It covers topics like diode characteristics, rectifiers, transistor biasing, and FETs. The exam has two parts - part A contains 10 short answer questions worth 1-3 marks each. Part B contains 5 longer answer questions worth 5-10 marks each, requiring explanations and calculations. Some of the questions covered are the reverse saturation current of a diode, types of transistor breakdown, rectifier calculations, transistor amplifier biasing, and properties of JFETs.

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Manjot Kaur
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© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
40 views

Estelar: Faculty of Engineering

This document contains a 10 question exam on electronic devices. It covers topics like diode characteristics, rectifiers, transistor biasing, and FETs. The exam has two parts - part A contains 10 short answer questions worth 1-3 marks each. Part B contains 5 longer answer questions worth 5-10 marks each, requiring explanations and calculations. Some of the questions covered are the reverse saturation current of a diode, types of transistor breakdown, rectifier calculations, transistor amplifier biasing, and properties of JFETs.

Uploaded by

Manjot Kaur
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Code No.

6017 / S

FACULTY OF ENGINEERING

B.E. 2/4 (ECE ) I Semester (Suppl.) Examination, July 2014


Subject: Electronic Devices
Time: 3 Hours

Max.Marks: 75

Note: Answer all questions from Part A. Answer any five questions from Part B.
PART A (25 Marks)
The reverse saturation current of a silicon PN junction diode is 15 A. Calculate the diode
current for the forward bias voltage of 0.6 V at 25oC.
2 Difference between Zener breakdown and Avalanche breakdown.
3 Define ripple factor and transformer utilization factor of a rectifier.
4 Draw V-I characteristics of tunnel diode and give some applications.
5 What is mean by thermal runaway?
6 Define , and of a transistor. Show how they are related to each other.
7 What are the characteristics and applications of common collector amplifier?
8 Difference between SCR and Triac.
9 Determine the values of resistors RD and RS for the self-based p-channel JFET having the
parameters. VP = 5 V, IDSS = 12 mA, VDD = 12 V, ID= 5 mA and VDS = 6 V.
10 Draw the transfer characteristics of MOSFET.

te

la

3
2
2
3
2
3
3
2
3
2

PART B (50 Marks)

Es

11 a) Explain diode switching characteristics with wave forms.


b) Reverse saturation current of a silicon diode is 8 A. Calculate the current flowing through
the diode when the applied forward bias voltages are 0.5 V, 0.6 V and 0.7 V at room
temperature.
12 Explain a bridge rectifier with Ckt diagram and wave forms. Why bridge rectifier is preferred then
centre tapped rectifier. Derive (i) Idc (ii) TUF (iii) Ripple factor
(iv) Efficiency (v) Form factor.
13 a) Show that ripple factor of full wave rectifier with capacitive filter is () =
b) Difference between LED and LCD.

1
.
4 3 f.c.RL

5
5

10
6
4

14 A CE transistor amplifier with voltage divider bias circuit having the quiescent point at VCE = 12
V. IC = 2 mA and stability factor S 5 of V CC = 24 V, VBE = 0.7 V, = 50 and
RC = 4.7k. Determine R1 and R2 and RE.

10

15 A common base transistor amplifier driven by a voltage source of internal resistance Rs = 1.2
k , the load impedance is 1 k . The h - parameters are hib = 22 , hrb = 3x10-4, hfb = -0.98
and hob = 0.5 A/V. Compute the current gain AI, Inpute Impedance Ri voltage gain Av, overall
voltage gain Avs, overall current gain As, and power gain. Use exact analysis.

10

16 a) Compare JFET with BJT.

-2
b) Prove that transconductance of FET gm =
VP

17 Write short notes on:


a) Uni junction transistor

b)

Early effect

****

I DSS .I DS
c)

5
Varactor diode

(4 + 3 + 3)

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