A KD V: ECE449-Microdevices and Micromachining Technology Spring 2016
A KD V: ECE449-Microdevices and Micromachining Technology Spring 2016
Spring 2016
a) Snap-down Voltage:
Ved
8 kd 3
27 A
d 1m
A 100 m 100 m 10 8 m 2
8.854 10 12
k
F/m
27 A 2
Ved
8 d3
Then,
27 8.85 10 12 10 8 2
k
12
8
10 6 3
k 43.011
Or,
N/m
Now,
Spring constant of equivalent cantilever beam
k eq 4 k sin gle
4
12 EI
L3
12 E t 3 w
L3 12
43.011 4
12 160 10 9 1.5 10
12
10 12
w 43.011
6 3
(Since,
10 12
12
9
4 12 160 10 1.5 10 6
t 3w
12
w=19.91
m
b) [20 points] Hydrofluoric Acid (HF) will be used to release the fabricated structure. Assume an
etchrate of 3 m/min. Given a safety factor of 2, calculate the minimum separation between etch
holes if the HF immersion is to be limited to a maximum of 10 min. Maximum distance between
etch holes;
Shashank Rajoria
Page 2
2 Re t e
2 3 10 6 (10 60)
2
2 3 10 6 (10)
2
a 30 10 6
a =30 m
m
Maximum separation,
Minimum separation between etch holes, is 2m.
c) [20 points] Draw a layout design of the actuator that conforms to the design parameters calculated
in a) and b) and parameters and process from Figs. 1 and 2. You are welcome to use L-Edit or
Power Point
All dimensions are in micro meters
Anchor Hole: 5m x 5m
Overlaps: 3m
d) [10 points] Due to processing constraints, positive photoresist will be used when patterning SiO2.
Draw the mask layout for mask layer 1 (anchor etch), illustrating the chrome on the mask for that
layer.
Mask layer 1 (anchor etch) with positive photoresist:
Shashank Rajoria
Page 3
e) [20 G.C.] Calculate the out-of-plane undamped resonant frequency of the actuator. Neglect the
mass of the beams, as well as the effects of the etch release holes.
fr
1
2
k
m
Resonant frequency,
m V wA
Mass of actuator,
m 2000 10 6 10 8 kg
m 2 10 11 kg
fr
1
2
43.011
2 10 11
Then,
fr =233.4kHz
fr =233.4kHz
Shashank Rajoria
Page 4