EEE 304

Power Electronics
Lecture Notes
D. R. Binu Ben Jose
VIT University, Chennai Campus,
Chennai - 127

Introduction

Course Name

: Power Electronics

Course Code

: EEE 304

LTPC

:3024

Course
Pre-requisites

: EEE102

VIT University, Chennai Campus, Chennai.

Objectives

To get adequate knowledge of the power

electronic devices and their applications

To know about electric power conversion

(AC to DC, DC to DC, DC to AC), control and
conditioning of electric power

To get a clear exposure on designing the

power electronic circuits
VIT University, Chennai Campus, Chennai.

Expected Outcome
On the completion of this course the
student will be able to:

Obtain the switching characteristic of different types of power

semi-conductor devices.
Determine the operation, characteristics and performance
parameters of controlled rectifiers.
Apply switching techniques and basic topologies of DC-DC
switching regulators
Use the different modulation techniques of pulse width
modulated inverters and to apply the harmonic reduction
methods.
Design the power electronic converters in conditioning the
power supply that suit the practical applications.
VIT University, Chennai Campus, Chennai.

Student outcomes

An ability to apply knowledge of mathematics,

science, and engineering
An ability to design and conduct experiments, as
well as to analyze and interpret data
An ability to design a system, component, or
process to meet desired needs within realistic
constraints such as economic, environmental,
social, political, ethical, health and safety,
manufacturability, and sustainability
An ability to identify, formulate, and solve
engineering problems
VIT University, Chennai Campus, Chennai.

Evaluation Mode

Continuous Assessment (30 %)

Assignments / Seminars/ Projects (20 %)

Term - End Examination (50 %)

VIT University, Chennai Campus, Chennai.

Syllabus

VIT University, Chennai Campus, Chennai.

Unit I
Power Semi-Conductor Devices

Structure, operation and characteristics

of SCR, TRIAC, power transistor,
MOSFET and IGBT. Driver and snubber
circuits for MOSFET - Turn-on and turnoff characteristics and switching losses
series & parallel operation protection
of SCRs firing & typical control
circuits Performance parameter
VIT University, Chennai Campus, Chennai.

Unit II
Phase-Controlled Converters

2-pulse, 3-pulse and 6-pulse converters

Inverter operation of fully controlled
converter Effect of source inductance
single phase dual converter Single
phase AC voltage controllers; AC
chopper; single phase cyclo converters.

VIT University, Chennai Campus, Chennai.

Unit III
DC To DC Converters

Step-down and step-up choppers Time ratio control and current limit
control basic oscillating chopper
multi chopper quadrant operation of
chopper.

VIT University, Chennai Campus, Chennai.

10

Unit IV
Inverters

Introduction of basic series and parallel

inverters, single phase Bridge inverters
PWM techniques: Sinusoidal PWM
modified sinusoidal PWM and multiple
PWM- Voltage and harmonic control Series resonant inverter - Current
source inverters.

VIT University, Chennai Campus, Chennai.

11

Unit V
Applications

Regulated power supply, SMPS, UPS ,

DC Circuit Breakers , AC circuit
breakers, HVDC systems, AC and DC
motor control.

VIT University, Chennai Campus, Chennai.

12

Reference Books
1.

2.

3.

4.

5.

Muhammad H. Rashid, Power Electronics: Circuits,

Devices and Applications, Pearson Education, Third
edition, 2004 / PHI.
Ned Mohan, Tore.M.Undeland, William.P.Robbins,
Power Electronics: Converters, Applications and
Design, John Wiley and sons, third edition, 2003.
S N Singh, A text book of power Electronics,
Dhanpat Rai and Co., New Delhi, 2000.
Bimal K. Bose, Modern Power Electronics and AC
Drives, Pearson Education, 2003.
Jaganathan, Introduction to Power Electronics,
Prentice Hall of India, 2004.
VIT University, Chennai Campus, Chennai.

13

Lecture 1, 2
10, 14.07.2015

VIT University, Chennai Campus, Chennai.

14

Unit I
Power Semi-Conductor Devices

Structure, operation and characteristics

of SCR, TRIAC, power transistor,
MOSFET and IGBT. Driver and snubber
circuits for MOSFET - Turn-on and turnoff characteristics and switching losses
series & parallel operation protection
of SCRs firing & typical control
circuits Performance parameter
VIT University, Chennai Campus, Chennai.

15

Fundamentals of Devices

Semiconductors

VIT University, Chennai Campus, Chennai.

16

Contd

PN Junction diodes

VIT University, Chennai Campus, Chennai.

17

Transistors

Basic Structure

VIT University, Chennai Campus, Chennai.

18

Contd
NPN Transistor

PNP Transistor

NPN transistors are used widely than PNP transistors. Why?

Students to search and find the answer for this question

VIT University, Chennai Campus, Chennai.

19

Contd

Transistor Characteristics

VIT University, Chennai Campus, Chennai.

20

Modes of operation

Cutoff: In cutoff, both junctions reverse biased. There is very little current flow,
which corresponds to a logical "off", or an open switch.

Forward-active (or simply, active): The emitter-base junction is forward biased

and the base-collector junction is reverse biased. Most bipolar transistors are
designed to afford the greatest common-emitter current gain, f in forwardactive mode. If this is the case, the collector-emitter current is approximately
proportional to the base current, but many times larger, for small base current
variations.

Reverse-active (or inverse-active or inverted): By reversing the biasing

conditions of the forward-active region, a bipolar transistor goes into reverseactive mode. In this mode, the emitter and collector regions switch roles. Since
most BJTs are designed to maximise current gain in forward-active mode, the
f in inverted mode is several times smaller. This transistor mode is seldom
used. The reverse bias breakdown voltage to the base may be an order of
magnitude lower in this region.

Saturation: With both junctions forward-biased, a BJT is in saturation mode and

facilitates current conduction from the emitter to the collector. This mode
corresponds to a logical "on", or a closed switch.
VIT University, Chennai Campus, Chennai.

21

Contd

Typical Transistors

VIT University, Chennai Campus, Chennai.

22

Unit I
Power Semi-Conductor Devices

VIT University, Chennai Campus, Chennai.

23

Lecture 3
15.07.2015

VIT University, Chennai Campus, Chennai.

24

Classification

VIT University, Chennai Campus, Chennai.

25

Important Parameters

Breakdown voltage and current

On-state resistance.
Trade-off between breakdown voltage and
on-state resistance.
Rise and fall times for switching between on
and off states.
Safe-operating area.

VIT University, Chennai Campus, Chennai.

26

Thyristor

Thyristor is a family of devices having 4

semiconducting layers (typically - PNPN).
Eg. SCR, Triac, Diac

Silicon controlled rectifier (SCR) is the most

powerful device in the thyristor family.
Triac is used in medium power supplies
(preferably 1 kW).
Diac is a switching device.

VIT University, Chennai Campus, Chennai.

27

Silicon controlled rectifier (SCR)

Used on (HVDC) systems

VIT University, Chennai Campus, Chennai.

28

Contd
Structure and
Two transistor
analogy

Cathode

Gate

n
J3

19

10

-3

cm

n
17

10

cm

-3

J2

J1

13

10

10

17
19

10

14

-5 x 10

cm

-3

cm

-3

-3

19

10

-3

cm

10m
30-100m

50-1000m
30-50m

cm

Anode

VIT University, Chennai Campus, Chennai.

29

Characteristics
Three States:

Reverse Blocking
Forward Blocking
Forward Conducting

VIT University, Chennai Campus, Chennai.

30

Effects of gate current

VIT University, Chennai Campus, Chennai.

31

Estimation of anode current

VIT University, Chennai Campus, Chennai.

32

Contd...

Considering PNP transistor

of the equivalent circuit,
I E 1 I A , I C I C1 , 1 ,
I CBO I CBO1 , I B I B1

I B1 I A 1 1 I CBO1 1
VIT University, Chennai Campus, Chennai.

33

Contd...

Considering NPN transistor

of the equivalent circuit,
I C I C2 , I B I B2 , I E2 I K I A I G
I C2 2 I k I CBO2

I C2 2 I A I G I CBO2 2
VIT University, Chennai Campus, Chennai.

34

Contd

From the equivalent circuit,

we see that
I C2 I B1

2 I g I CBO1 I CBO 2
IA
1 1 2
VIT University, Chennai Campus, Chennai.

35

Contd
Case 1: When I g 0

IA

I CBO1 I CBO2

1 1 2

Case 2: When I G 0

2 I g I CBO1 I CBO 2
IA
1 1 2
VIT University, Chennai Campus, Chennai.

36

Switching characteristic of SCR

Turn-on
Characteristics

ton td tr

VIT University, Chennai Campus, Chennai.

37

Contd
VAK

tC
tq

Turn-off Characteristic

t
IA
Anode current
begins to
decrease

Commutation

di
dt

Recovery
t1 t2

Recombination
t3

t4

t5
t

tq=device

off time

tc=circuit

off time

tgr

trr
tq

tc
VIT University, Chennai Campus, Chennai.

38

Methods to Turn-on SCR

Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.

VIT University, Chennai Campus, Chennai.

39

Various terms

Average ON state current rating

RMS forward conduction current rating
Surge current rating
Holding current
Latching current
di/dt rating
Peak repetitive forward blocking voltage
Forward break over voltage
Peak repetitive reverse blocking voltage
Turn OFF time
Turn ON time
VIT University, Chennai Campus, Chennai.

40

Lecture 4
21.07.2015

VIT University, Chennai Campus, Chennai.

41

Bidirectional Triode Thyristors

(TRIAC)

VIT University, Chennai Campus, Chennai.

42

Contd

VIT University, Chennai Campus, Chennai.

43

Operating modes

Mode 1(MT2 Positive, Gate Positive)

MT2 (+)

P1
N1
P2

Ig

N2
MT1 ()

(+)
Ig

VIT University, Chennai Campus, Chennai.

44

Contd

Mode-II (MT2 Positive, Gate Negative)

MT2 (+)

P1
Initial
conduction

Final
conduction

N1
P2
N3

N2
MT1 ()

V
Ig
VIT University, Chennai Campus, Chennai.

45

Contd

Mode-III, MT2 Negative, Gate Positive

MT 2 ()

N4
P1
N1
P2

N2
MT1 (+)

G
(+)
Ig

VIT University, Chennai Campus, Chennai.

46

Contd

Mode-IV, MT2 Negative, Gate Negative

MT2 ()

N4
P1
N1
N3

P2
MT 1 (+)

G
(-)
Ig

VIT University, Chennai Campus, Chennai.

47

Characteristics

VIT University, Chennai Campus, Chennai.

48

SCR and Triac conduction

VIT University, Chennai Campus, Chennai.

49

MOSFET

Symbols

VIT University, Chennai Campus, Chennai.

50

MOSFET Terminals

The voltage applied to the GATE terminal determines

whether current can flow between the SOURCE & DRAIN
terminals.

For an n-channel MOSFET, the SOURCE is biased at a lower

potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)

For a p-channel MOSFET, the SOURCE is biased at a higher

potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )

The BODY terminal is usually connected to a fixed

potential.

For an n-channel MOSFET, the BODY is connected to VDD V

For a p-channel MOSFET, the BODY is connected to 0 V
VIT University, Chennai Campus, Chennai.

51

MOSFET Structure
NMOS: N-channel Metal
Oxide Semiconductor

L = channel length
W = channel width

GATE
L
Metal (heavily
doped poly-Si)

DRAIN

SOURCE
A GATE electrode is placed above (electrically insulated from)
the silicon surface, and is used to control the resistance
between the SOURCE and DRAIN regions
VIT University, Chennai Campus, Chennai.

52

N-channel MOSFET
Gate

Source

IS

IG

Drain

gate
oxide insulator
n

ID
n

Without a gate-to-source voltage applied, no current can

flow between the source and drain regions.
Above a certain gate-to-source voltage (threshold
voltage VT), a conducting layer of mobile electrons is
formed at the Si surface beneath the oxide. These
electrons can carry current between the source and drain.
VIT University, Chennai Campus, Chennai.

53

High voltage MOSFET - Operation

VIT University, Chennai Campus, Chennai.

54

Characteristics

Output characteristics

VIT University, Chennai Campus, Chennai.

55

Insulated gate bipolar transistor

(IGBT)

Posses the advantages of both BJT and

IGBT such as less Vce ON and voltage
controlled.

Better characteristics at high voltages

High power rating

VIT University, Chennai Campus, Chennai.

56

IGBT structure, operation and

characteristics

The characteristics is similar to that of MOSFET

VIT University, Chennai Campus, Chennai.

57

Driver Circuits for SCR

VIT University, Chennai Campus, Chennai.

58

Contd

VIT University, Chennai Campus, Chennai.

59

Contd

VIT University, Chennai Campus, Chennai.

60

Driver Circuits for MOSFET/IGBT

VIT University, Chennai Campus, Chennai.

61

Series and parallel operation of devices

Series connection of SCRs

R = (nVd Vs)/(n 1)Ib

C = (n 1) Qrr/ (nVd Vs)

VIT University, Chennai Campus, Chennai.

62

Contd

Parallel connection of SCRs

VIT University, Chennai Campus, Chennai.

63

Exercise 1

VIT University, Chennai Campus, Chennai.

64

Exercise 2

VIT University, Chennai Campus, Chennai.

65

Exercise 3

VIT University, Chennai Campus, Chennai.

66

Snubber Circuits for SCRs (Protection)

Turn on snubber
di/dt protection

Limits inrush
switching Current
Inductance

Turn off snubber

dv/dt protection

Limits voltage spikes

Series RC network

VIT University, Chennai Campus, Chennai.

67

Exercise 1

VIT University, Chennai Campus, Chennai.

68

Contd

VIT University, Chennai Campus, Chennai.

69

Exercise 2

VIT University, Chennai Campus, Chennai.

70

Contd

VIT University, Chennai Campus, Chennai.

71

Snubber Circuits for MOSFETs

Turn on snubber
di/dt protection

Limits inrush
switching Current
Inductance

Turn off snubber

dv/dt protection

Limits voltage spikes

Series RC network

VIT University, Chennai Campus, Chennai.

72

Exercise 3

VIT University, Chennai Campus, Chennai.

73

Switching losses of devices

VIT University, Chennai Campus, Chennai.

74

Exercise 1

VIT University, Chennai Campus, Chennai.

75

Contd

VIT University, Chennai Campus, Chennai.

76

Contd

VIT University, Chennai Campus, Chennai.

77

Contd

VIT University, Chennai Campus, Chennai.

78

Contd

VIT University, Chennai Campus, Chennai.

79

Exercise 2

VIT University, Chennai Campus, Chennai.

80

Exercise 3

VIT University, Chennai Campus, Chennai.

81

Contd

VIT University, Chennai Campus, Chennai.

82

Exercise 4

VIT University, Chennai Campus, Chennai.

83

Contd

VIT University, Chennai Campus, Chennai.

84

Exercise 5

VIT University, Chennai Campus, Chennai.

85

Contd

VIT University, Chennai Campus, Chennai.

86

Contd

VIT University, Chennai Campus, Chennai.

87

Contd

VIT University, Chennai Campus, Chennai.

88

Thermal Protection

Switching and conduction losses increases the

junction temperature sometimes beyond 100o C
Maximum operating case temperature is 60o C
This keeps the junction temperature less than
100o C
Use heat sinks for medium power
Use coolant for high power

VIT University, Chennai Campus, Chennai.

89

Sample Heat sinks

VIT University, Chennai Campus, Chennai.

90

Assignment
1

VIT University, Chennai Campus, Chennai.

91

Contd
3

VIT University, Chennai Campus, Chennai.

92

Contd
4

Design a heat sink (dimensions and Heat sink part number

available in internet) for an IGBT CT60AM based simple boost
converter. Heat sink temperature not to exceed 60o C. CT60AM
carries an average current of 30 A and a peak current of 60 A
at a switching frequency of 10 kHz and duty ratio 50 %. Use
appropriate thermal pad and heat sink compound. Assume no
core saturation occurs in the boost inductor.

CT60AM

VIT University, Chennai Campus, Chennai.

93

Unit II
Phase-Controlled Converters

2-pulse, 3-pulse and 6-pulse converters

Inverter operation of fully controlled
converter Effect of source inductance
single phase dual converter Single
phase AC voltage controllers; AC
chopper; single phase cyclo converters.

VIT University, Chennai Campus, Chennai.

94

General
Phase-Controlled Converters
Single-Phase

Three-Phase

Semiconverter Semiconverter
Full converter

Full converter

Dual converter Dual converter

VIT University, Chennai Campus, Chennai.

95

Quadrant operation of converters

VIT University, Chennai Campus, Chennai.

96

Contd

VIT University, Chennai Campus, Chennai.

97

Converters - classification
Semiconverter
..is a one-quadrant converter and it has one polarity
Full converter
..is a two-quadrant converter and the polarity of its output
can be either positive or negative. However
the output current of full converter has one polarity only
Dual converter
..can operate in four quadrants ; both the output voltage
and current can be either positive or negative
VIT University, Chennai Campus, Chennai.

98

Single pulse converter / Half wave

controlled rectifier with R load

VIT University, Chennai Campus, Chennai.

99

Contd

Average

Vm
1
Output Vdc 2 Vm sin td t 2 1 cos

Voltage
Maximum Average
Vm
Vdm
Output Voltage

Normalized
Output Voltage

Vdc
Vn
0.51 cos
Vdm

RMS o/p
Vm 1
1
sin 2
2
2

Vrms
V
sin

td

2
2
2
Voltage
VIT University, Chennai Campus, Chennai.

100

Exercise 1 (Single pulse converter

with purely resistive load)

A single pulse converter has a purely

resistive load of R and a delay angle of =
/2, determine

the rectification efficiency

the form factor FF
the ripple factor RF
the peak inverse voltage PIV of thyristor T1

VIT University, Chennai Campus, Chennai.

101

Contd

Vdc

Vm
1

V
sin

td

m
2
2

cos

Vdc 0.1592Vm
Vrms

Vm

2
2
dc
2
rms

2
1

2
sin

2
2

0.1592Vm

2
0.3536Vm

0.3536Vm

20.27%

VIT University, Chennai Campus, Chennai.

102

Contd
Vrms 0.3536Vm
FF

2.221
Vdc 0.1592Vm
RF FF 1 2.221 1 1.983
2

PIV Vm
VIT University, Chennai Campus, Chennai.

103

Single pulse converter / Half wave

controlled rectifier with RL load

VIT University, Chennai Campus, Chennai.

104

Exercise 2 (Single pulse converter

with inductive load (RL))

A single pulse converter has an inductive

load of R-L, a delay angle of = /3 and
conduction angle of 2/3, determine

the rectification efficiency

the form factor FF
the ripple factor RF
the peak inverse voltage PIV of thyristor T1

VIT University, Chennai Campus, Chennai.

105

Single-Phase full converter

With R Load

VIT University, Chennai Campus, Chennai.

106

Contd

With RL Load

VIT University, Chennai Campus, Chennai.

107

Average and RMS values of single

phase full converter
2
Vdc
2

Vrms

Vm sin td t

2Vm

cos

Vm
V sin td t
2
2
m

VIT University, Chennai Campus, Chennai.

108

Single-Phase
Semiconverter

VIT University, Chennai Campus, Chennai.

109

Contd

Average and rms values

Vm
2

Vdc
V
sin

td

cos

m
2

Vrms

2
2
2

Vm sin td t

2
VIT University, Chennai Campus, Chennai.

110

Single phase dual converter

VIT University, Chennai Campus, Chennai.

111

Waveforms

VIT University, Chennai Campus, Chennai.

112

Input output performances

Performance curves of LCC

Input displacement factor (DPF)

Input power factor (PF)

Angle of displacement between V and I

Fundamental real power input (upon) RMS
apparent power.

Input current distortion factor

Fundamental rms amplitude (upon) total rms

amplitude
VIT University, Chennai Campus, Chennai.

113

Contd.

Input harmonic factor

DC voltage ratio

Mean dc voltage to maximum dc voltage

Voltage ripple factor

Total harmonic current (upon) fundamental

current

Net harmonic content of output voltage to

average voltage

Current ripple factor

Net harmonic content of output current to

average current
VIT University, Chennai Campus, Chennai.

114

Single-Phase Full Converter (RLEload continuous conduction)

VIT University, Chennai Campus, Chennai.

115

Contd
Mode 1 = Mode 2

At t = , IL = ILo

VIT University, Chennai Campus, Chennai.

116

Contd

2VS
2VS
E
E
IL
sin t I L 0
sin e
Z
R
R
Z

where

tan 1

L
R

R
t
L

Z R 2 L

At the end of mode 1, t = + , IL1 = ILo, Solving ILo for gives,

VIT University, Chennai Campus, Chennai.

117

Contd

The critical value of at which Io becomes zero can

be solved by iterative method for known values of ,
R, L and E.

RMS Current
for Thyristor is
AVG Current
for Thyristor is
RMS Output
Current
AVG Output
Current

1
IR
2

1
IA
2

iL d t

iL d t

I rm s I I 2 I R
2
R

2
R

I dc I A I A 2 I A
VIT University, Chennai Campus, Chennai.

118

Discontinuous operation

VIT University, Chennai Campus, Chennai.

119

Excercises
A single-phase full converter has an RL load of R
= 2.5 , L = 6.5mH. The input voltage is VS = 100
V(rms) at 50 Hz. Determine
(a) the average and rms values of output voltage
and current.
(b) The conversion efficiency.
(c) The conduction losses if VAK ON = 1 V per
device.
(d) The average switching loss if tr = tf = 2 S.
Assume td = ts = 0 and sinusoidal loss curves.
VIT University, Chennai Campus, Chennai.

120

Exercises
A single-phase semiconverter has an RL load
of L = 6.5mH, R = 2.5 Ohm, and E = 10 V. The
input voltage is VS = 120 V(rms) at 50 Hz.
Determine
(a) the load current IL0 at t 60
(b) the average thyristor current IA
(c) the rms thyristor current IR
(d) the rms output current Irms
(e) the average output current Idc

VIT University, Chennai Campus, Chennai.

121

CAT 1 Questions
1.

2.

3.

4.

5.

Explain the VI characteristics of a four layer, semi-controlled unidirectional power

electronic device which is used in phase controlled ac-dc conversion.
Design a snubber (L1, Rs, Cs) for the thyristor in Fig. 1. The supply voltage is 400 V,
allowable di/dt and dv/dt are 50 kA/ms and 200 kV/ms respectively.

A series thyristor string with ratings 3 kV and 750 A uses thyristors with 800 V and 175 A
rating. Find the number of SCRs to be connected in series and in parallel. Use a derating
factor of 30 %. Determine the values of R and C of static and dynamic equalizing circuits.
Assume the maximum forward blocking current and maximum difference in recovery
charge as 8 mA and 30 C respectively.
A single phase fully controlled converter is connected to a 20 resistance load. Estimate
the average load voltage, average load current and rms load current for a triggering angle
of 300, if the supply voltage is 230V, 50Hz. Derive the formula used. Draw the load
current and load voltage waveforms for the above single phase converter.
Explain the symbol, basic structure and transfer characteristics of different types of
MOSFETs with neat diagrams. Compare an IGBT with MOSFET.
VIT University, Chennai Campus, Chennai.

122

Answer Key
1.

2.

Explain the VI characteristics of SCR include explanations for forward VBO, IH, IL, reverse
breakdown voltage.
Answer in Fig.

VIT University, Chennai Campus, Chennai.

123

Contd
3.

Answer in Fig. Use the same equations to calculate newly the answer

VIT University, Chennai Campus, Chennai.

124

Contd
4.

Vav = 193.3 V
Iav = 9.66 A
Vrms = 226.1 V
Irms = 11.305
Draw the voltage and current waveforms

5.

Explain the required items for four types of

MOSFETS.

VIT University, Chennai Campus, Chennai.

125

Performance of 2-pulse converters

Displacement Factor

Input power factor

Harmonic Factor

Effect of overlap

VIT University, Chennai Campus, Chennai.

126

Three phase half-wave

controlled converters
(3-pulse converters)

VIT University, Chennai Campus, Chennai.

127

Contd

Continuous conduction

Vav
Vrms

Dis-continuous conduction

Vav
Vrms

VIT University, Chennai Campus, Chennai.

128

Three phase fully

controlled converters
(6-pulse converters)

VIT University, Chennai Campus, Chennai.

129

Contd

Continuous conduction

Vav
Vrms

Dis-continuous conduction (Assignment -2)

Vav
Vrms

VIT University, Chennai Campus, Chennai.

130

Contd

Fourier analysis

Isn

I1

Irms

DF

PF

HF
VIT University, Chennai Campus, Chennai.

131

Three phase dual converter

VIT University, Chennai Campus, Chennai.

132

Inverter operation of Three phase

full converter

VIT University, Chennai Campus, Chennai.

133

Effect of source inductance

VIT University, Chennai Campus, Chennai.

134

Assignment - 2

Explain in detail with necessary equations

the operation of three phase full converter
with free wheeling diode at the output
terminals.

VIT University, Chennai Campus, Chennai.

135

Three phase Semi-converters (Half

controlled ) (6-pulse converters)

VIT University, Chennai Campus, Chennai.

136

Contd

Continuous conduction

Vav
Vrms

VIT University, Chennai Campus, Chennai.

137

AC voltage controllers

Single phase

Using triac advantages, dis-advantages,

application and power level
Using SCR advantages, dis-advantages,
application and power level

Three phase

Using SCR advantages, dis-advantages,

application and power level
Connections of star and delta networks,
various topologies
VIT University, Chennai Campus, Chennai.

138

Unit III
DC To DC Converters

Step-down and step-up choppers Time ratio control and current limit
control basic oscillating chopper
multi chopper quadrant operation of
chopper.

VIT University, Chennai Campus, Chennai.

139

Introduction

VIT University, Chennai Campus, Chennai.

140

Contd

Chopper is a static device.

A variable dc voltage is obtained from a constant dc
voltage source.
Also known as dc-to-dc converter.
Widely used for motor control.
Also used in regenerative braking.
Thyristor converter offers greater efficiency, faster
response, lower maintenance, smaller size and
smooth control.
MOSFET/IGBT based converter offers high switching
frequency, lesser filter requirements, faster response,
lower maintenance, smaller size and smooth control.
VIT University, Chennai Campus, Chennai.

141

Types of basic Choppers

Step-down choppers.

output voltage is less than input voltage.

output current is more than input current.

Step-up choppers.

output voltage is more than input voltage.

output current is less than input current.

VIT University, Chennai Campus, Chennai.

142

Principle of Step-down Chopper

Chopper
i0

V0

VIT University, Chennai Campus, Chennai.

143

Contd

A step-down chopper with resistive load.

The thyristor in the circuit acts as a
switch.
When thyristor is ON, supply voltage
appears across the load
When thyristor is OFF, the voltage across
the load is zero.

VIT University, Chennai Campus, Chennai.

144

Contd

v0
V
Vdc
t
tON

tOFF

i0
V/R
Idc
t
T
VIT University, Chennai Campus, Chennai.

145

Contd
Vdc Average value of output or load voltage.
I dc Average value of output or load current.
tON Time interval for which SCR conducts.
tOFF Time interval for which SCR is OFF.
T tON tOFF Period of switching or chopping period.
1
f Freq. of chopper switching or chopping freq.
T

VIT University, Chennai Campus, Chennai.

146

Contd
Average Output Voltage
tON

Vdc V

tON tOFF
tON
Vdc V
V .d
T
tON
but
d duty cycle
t

Average Output Current

Vdc
I dc
R
V tON V
I dc
d

R T R
RMS value of output voltage
1
VO
T

VIT University, Chennai Campus, Chennai.

tON

v dt
2
o

147

Contd
But during tON , vo V
Therefore RMS output voltage
1
VO
T

tON

dt

tON
V
VO
tON
.V
T
T
VO d .V
VIT University, Chennai Campus, Chennai.

148

Contd

Output power PO VO I O

VO
But
IO
R
Output power
2
O

V
PO
R
2
dV
PO
R
VIT University, Chennai Campus, Chennai.

149

Contd
Effective input resistance of chopper
V
Ri
I dc
R
Ri
d
The output voltage can be varied by
varying the duty cycle.
VIT University, Chennai Campus, Chennai.

150

Methods of Modulation/Control

The output dc voltage can be varied by the

following methods.
Constant frequency operation with variable
ON time or Pulse width modulation control
with constant frequency operation.
Variable frequency control.

With constant ON time

With constant OFF time

Current limit control

VIT University, Chennai Campus, Chennai.

151

Constant frequency operation

with variable ON time

tON is varied keeping chopping frequency

f & chopping period T constant.
Output voltage is varied by varying the
ON time tON

VIT University, Chennai Campus, Chennai.

152

Contd

V0
V
tON

tOFF
t
T

V0
V

t
tON

tOFF

VIT University, Chennai Campus, Chennai.

153

Variable Frequency Control

Chopping frequency f is varied keeping

either tON or tOFF constant.

To obtain full output voltage range,

frequency has to be varied over a wide
range.

This method produces harmonics in the

output and for large tOFF load current
may become discontinuous
VIT University, Chennai Campus, Chennai.

154

Contd
v0

tON

tOFF
t
T

v0
V
tON

tOFF
t
T
VIT University, Chennai Campus, Chennai.

155

Current limit control

VIT University, Chennai Campus, Chennai.

156

Chopper classifications

VIT University, Chennai Campus, Chennai.

157

Quadrant operation of chopper.

VIT University, Chennai Campus, Chennai.

158

Oscillating Choppers

Basic Circuit
VIT University, Chennai Campus, Chennai.

159

Contd

Modified Circuit

VIT University, Chennai Campus, Chennai.

160

Contd

Modified Circuit

VIT University, Chennai Campus, Chennai.

161

Contd

Morgans Chopper

VIT University, Chennai Campus, Chennai.

162

Unit IV
Inverters

Introduction of basic series and parallel

inverters, single phase Bridge inverters
PWM techniques: Sinusoidal PWM
modified sinusoidal PWM and multiple
PWM- Voltage and harmonic control Series resonant inverter - Current
source inverters.

VIT University, Chennai Campus, Chennai.

163

Current source inverters

Adding a large inductance to the dc circuit

VIT University, Chennai Campus, Chennai.

164

Contd

Current waveform

VIT University, Chennai Campus, Chennai.

165

Contd

Modes of operation

VIT University, Chennai Campus, Chennai.

166

Quality of an inverter

Quality is evaluated in terms of the following

Harmonic factor (HF)

Measure of individual harmonic contribution

Distortion factor (DF)

Measure of effectiveness in reducing unwanted harmonics

DF of individual harmonic is

VIT University, Chennai Campus, Chennai.

167

Contd

Total harmonic distortion

Measure of closeness of shape between a waveform and

its fundamental

Lower order harmonic

Harmonic component which is closest to the fundamental

VIT University, Chennai Campus, Chennai.

168

Unit V
Applications

Regulated power supply, SMPS, UPS ,

DC Circuit Breakers , AC circuit
breakers, HVDC systems, AC and DC
motor control.

VIT University, Chennai Campus, Chennai.

169

DC circuit breaker

VIT University, Chennai Campus, Chennai.

170

AC circuit breaker

VIT University, Chennai Campus, Chennai.

171