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Silicon Infrared Phototransistor

This document provides specifications for the QSD122/123/124 plastic silicon infrared phototransistor. It includes maximum ratings, electrical and optical characteristics, package dimensions, and a description noting it is an NPN phototransistor in a black epoxy T-1 3/4 package with high sensitivity and a narrow 24 degree reception angle. Graphs depict characteristics such as light current versus radiant intensity and angular response.

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267 views4 pages

Silicon Infrared Phototransistor

This document provides specifications for the QSD122/123/124 plastic silicon infrared phototransistor. It includes maximum ratings, electrical and optical characteristics, package dimensions, and a description noting it is an NPN phototransistor in a black epoxy T-1 3/4 package with high sensitivity and a narrow 24 degree reception angle. Graphs depict characteristics such as light current versus radiant intensity and angular response.

Uploaded by

api-306843506
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PLASTIC SILICON INFRARED

PHOTOTRANSISTOR
QSD122

QSD123

QSD124

PACKAGE DIMENSIONS
0.195 (4.95)

REFERENCE
SURFACE

0.305 (7.75)

0.040 (1.02)
NOM

0.800 (20.3)
MIN
EMITTER

COLLECTOR

SCHEMATIC
0.500 (1.25)

0.100 (2.54) NOM

COLLECTOR

0.240 (6.10)
0.215 (5.45)

NOTES:

0.020 (0.51)
SQ. (2X)

EMITTER

1. Dimensions for all drawings are in inches (mm).


2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.

DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.

FEATURES
NPN Silicon Phototransistor
Package Type: T-1 3/4
Notched Emitter: QED12X/QED22X/QED23X
Narrow Reception Angle: 24C
Daylight Filter
Package Material and Color: Black Epoxy
High Sensitivity

2001 Fairchild Semiconductor Corporation


DS300361
7/20/01

1 OF 4

This datasheet has been downloaded from http://www.digchip.com at this page

www.fairchildsemi.com

PLASTIC SILICON INFRARED


PHOTOTRANSISTOR
QSD122
ABSOLUTE MAXIMUM RATINGS

QSD123

QSD124

(TA = 25C unless otherwise specified)

Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation(1)

Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCE
VEC
PD

Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100

Unit
C
C
C
C
V
V
mW

NOTE:
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16 (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS


PARAMETER

Peak Sensitivity Wavelength


Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current(5)
QSD122
QSD123
QSD124
Saturation Voltage(5)
Rise Time
Fall Time

www.fairchildsemi.com

(TA =25C)

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

VCE = 10 V, Ee = 0
IC = 1 mA
IE = 100 A

!PS
"
ICEO
BVCEO
BVECO

30
5

880
12

100

nm
Deg.
nA
V
V

Ee = 0.5 mW/cm2, VCE = 5 V

IC (ON)

Ee = 0.5 mW/cm2, IC = 0.5 mA

VCE (SAT)
tr
tf

1.00
4.00
6.00

7
7

6.00
16.00

0.4

VCC = 5 V, RL = 100 V IC = 0.2 mA

2 OF 4

7/20/01

mA
V
s

DS300361

PLASTIC SILICON INFRARED


PHOTOTRANSISTOR
QSD122

QSD123

QSD124

Figure 1. Light Current vs. Radiant Intensity


Figure 2. Angular Response Curve

100

110

100

90

80

70

IC(ON) - Light Current (mA)

120

60

130
10

50
40

140
150

30
20

160
1

10

170
180
1.0
0.1
0.0

0.2

0.4

0.6

0.8

0.8

0.4

0.6

0.2

0.0

0.2

0.4

0.6

0.8

0
1.0

1.0

Ee - Radiant Intensity (mW/cm )

Figure 3. Dark Current vs. Collector - Emitter Voltage

Figure 4. Light Current vs. Collector - Emitter Voltage


101

I L - Normalized Light Current

ICEO - Dark Current (nA)

101

100

10-1

10-2

Ie=1mW/cm 2
Ie=0.5mW/cm 2

100

Ie=0.2mW/cm 2
Ie=0.1mW/cm 2

10-1

Normalized to:
VCE = 5V
Ie = 0.5mW/cm 2

10-2

TA = 25 oC
10-3

10

15

20

25

10-3
0.1

30

VCE - Collector-Emitter Voltage (V)

10

VCE - Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

ICEO - Normalized Dark Current

104

Normalized to:
VCE = 25V
103

TA = 25 oC

VCE =25V

102

VCE =10V
101

100

10-1
-40

-20

20

40

60

80

100

TA - Ambient Temperature ( C)

DS300361

7/20/01

3 OF 4

www.fairchildsemi.com

PLASTIC SILICON INFRARED


PHOTOTRANSISTOR
QSD122

QSD123

QSD124

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.

www.fairchildsemi.com

2. A critical component in any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.

4 OF 4

7/20/01

DS300361

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