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Basic Electronics 6

P-type silicon is created when boron, a trivalent impurity, is added to silicon. Boron atoms bond with three neighboring silicon atoms, leaving a "hole" where an electron is missing. These holes act as positive charge carriers that move through the silicon when a voltage is applied, making boron-doped silicon behave as if it has an excess of holes and giving it the name "P-type" silicon.

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44 views

Basic Electronics 6

P-type silicon is created when boron, a trivalent impurity, is added to silicon. Boron atoms bond with three neighboring silicon atoms, leaving a "hole" where an electron is missing. These holes act as positive charge carriers that move through the silicon when a voltage is applied, making boron-doped silicon behave as if it has an excess of holes and giving it the name "P-type" silicon.

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sanshinde10
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© © All Rights Reserved
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P-Type Silicon I

Trivalent impurities e.g., boron, aluminum, indium, and gallium have 3 valence
electrons.
When boron is added to Si, every boron atoms three valence electrons are locked up
in covalent bond with valence electrons of three neighboring Si atoms. However, a
vacant spot hole is created within the covalent bond between one boron atom and
a neighboring Si atom. The holes are considered to be positive charge carriers.
When a voltage is applied across the silicon-boron mixture, a hole moves toward the
negative voltage end while a neighboring electron fills in its place.
When boron is added to Si to yield the above effect, we say that Si is doped with
boron. The resulting mixture is called P-type silicon (P: positive charge carrier
silicon).
The trivalent impurities are referred to as acceptor impurities.
3 valence electrons

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