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Seminar Topics Best 10

This document summarizes several papers related to integrated circuits and semiconductor devices. The top paper proposes a merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect. The second paper describes an efficient architecture and hardware implementation of a hybrid fuzzy-Kalman filter for workload prediction. The third paper reports on a 1.58 nW power consumption bandgap reference for RFID tags with low temperature sensitivity.

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Ancil Cleetus
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101 views

Seminar Topics Best 10

This document summarizes several papers related to integrated circuits and semiconductor devices. The top paper proposes a merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect. The second paper describes an efficient architecture and hardware implementation of a hybrid fuzzy-Kalman filter for workload prediction. The third paper reports on a 1.58 nW power consumption bandgap reference for RFID tags with low temperature sensitivity.

Uploaded by

Ancil Cleetus
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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4.

**** A merged magnetotransistor for 3-axis magnetic field measurement based


on carrier recombinationdeflection effect
*** A computationally efficient model of single electron transistor for analog IC
simulation
3. **** A 1.58 nW power consumption and 34.45 ppm per C temperature coefficient
bandgap reference (BGR) for subblocks of RFID tag
*** Full split CV method for parameter extraction in ultra thin BOX FDSOI MOS
devices
*** Color recognition sensor in standard CMOS technology
1. ***** In depth characterization of electron transport in 14 nm FD-SOI CMOS
2. ***** Efficient architecture and hardware implementation of hybrid fuzzy-Kalman
filter for workload prediction
*** On-chip sinusoidal signal generation with harmonic cancelation for analog and
mixed-signal BIST applications
*** Physical design optimization of MOSFETs for millimeter wave and sub-millimeter
wave circuits
*** A 22 nm FinFET based 6T-SRAM cell design with scaled supply voltage for
increased read access time

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