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Silicon NPN Power Transistors: BD909 BD911

The document provides specifications for the BD909 and BD911 silicon NPN power transistors from Inchange Semiconductor. The transistors come in a TO-220C package and are intended for use in power linear and switching applications. Key specifications include absolute maximum ratings for voltage and current, thermal characteristics, and electrical characteristics like collector-emitter saturation voltage and current gain.

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Marcos Andre Mendes
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26 views

Silicon NPN Power Transistors: BD909 BD911

The document provides specifications for the BD909 and BD911 silicon NPN power transistors from Inchange Semiconductor. The transistors come in a TO-220C package and are intended for use in power linear and switching applications. Key specifications include absolute maximum ratings for voltage and current, thermal characteristics, and electrical characteristics like collector-emitter saturation voltage and current gain.

Uploaded by

Marcos Andre Mendes
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor

Product Specification

BD909 BD911

Silicon NPN Power Transistors

DESCRIPTION
With TO-220C package
Complement to type BD910 BD912
APPLICATIONS
Intented for use in power linear
and switching applications
PINNING
PIN

DESCRIPTION

Base

Collector;connected to
mounting base

Emitter

Absolute maximum ratings (Ta=25)


SYMBOL

PARAMETER

CONDITIONS
BD909

VCBO

Collector-base voltage

80
Open base

BD911
VEBO

V
100

BD909
Collector-emitter voltage

Emitter-base voltage

UNIT

80
Open emitter

BD911

VCEO

VALUE

V
100

Open collector

IC

Collector current

15

IB

Base current

PC

Collector power dissipation

90

Tj

Junction temperature

150

Tstg

Storage temperature

-65~150

MAX

UNIT

1.4

/W

TC25

THERMAL CHARACTERISTICS
SYMBOL
Rth j-c

PARAMETER
Thermal resistance junction to case

Inchange Semiconductor

Product Specification

BD909 BD911

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL

VCEO(SUS)

PARAMETER
Collector-emitter
sustaining voltage

CONDITIONS
BD909

MIN

TYP.

MAX

UNIT

80
IC=0.1A; IB=0

V
100

BD911

VCEsat-1

Collector-emitter saturation voltage

IC=5 A;IB=0.5 A

1.0

VCEsat-2

Collector-emitter saturation voltage

IC=10A;IB=2.5 A

3.0

Base-emitter saturation voltage

IC=10A;IB=2.5 A

2.5

Base-emitter voltage

IC=5A ; VCE=4V

1.5

VBEsat
VBE

BD909
ICBO

Collector cut-off current


BD911

ICEO

VCB=80V; IE=0
TC=150
VCB=100V; IE=0
TC=150

BD909

VCE=40V; IB=0

BD911

VCE=50V; IB=0

Collector cut-off current

0.5
5
0.5
5

mA

mA

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=4V

40

250

hFE-2

DC current gain

IC=5A ; VCE=4V

15

150

hFE-3

DC current gain

IC=10A ; VCE=4V

Transition frequency

IC=0.5A ; VCE=4V

fT

MHz

Inchange Semiconductor

Product Specification

BD909 BD911

Silicon NPN Power Transistors


PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)

Inchange Semiconductor

Product Specification

BD909 BD911

Silicon NPN Power Transistors

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