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Source Degeneration Theory

source degen nmos

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350 views

Source Degeneration Theory

source degen nmos

Uploaded by

Abhishek Kumar
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 9

Whites, EE 320

Lecture 32

Page 1 of 9

Lecture 32: Common Source Amplifier with


Source Degeneration.
The small-signal amplification performance of the CS amplifier
discussed in the previous lecture can be improved by including a
series resistance in the source circuit. (This is very similar if
not identical to the effect of adding emitter degeneration to the
BJT CE amplifier.) This so-called CS amplifier with source
degeneration circuit is shown in Fig. 4.44(a).

vO

(Fig. 4.44a)
We have a choice of small-signal models to use for the
MOSFET. A T model will simplify the analysis, on one hand, by
allowing us to incorporate the effects of RS by simply adding
this value to 1/gm in the small-signal model, if we ignore ro.

2009 Keith W. Whites

Whites, EE 320

Lecture 32

Page 2 of 9

This small-signal circuit is shown in Fig. 4.44(b).

(Fig. 4.44b)
On the other hand, using the T model makes the analysis more
difficult when ro is included. (The hybrid model is better at
easily including the effects of ro.) However, ro in the MOSFET
amplifier is large so we can reasonably ignore its effects for now
in the expectation of making the analysis more tractable.

Small-Signal Amplifier Characteristics


Well now calculate the following small-signal quantities for
this MOSFET common source amplifier with source
degeneration: Rin, Av, Gv, Gi, and Rout.

Whites, EE 320

Lecture 32

Page 3 of 9

Input resistance, Rin. Referring to the small-signal equivalent


circuit above in Fig. 4.44(b), with ig = 0 , then
(4.84),(1)
Rin = RG
Partial small-signal voltage gain, Av. We see at the output side
of the small-signal circuit in Fig. 4.44(b)
vo = g m vgs ( RD || RL )
(2)
which is the same result (ignoring ro) as we found for the CS
amplifier without source generation. At the gate, however, we
find through voltage division that
1 / gm
vi
vgs =
vi =
(4.86),(3)
1 / g m + RS
1 + g m RS
This is a different result than for the CS amplifier in that vgs is
only a fraction of vi here, whereas vgs = vi without RS.

Substituting (3) into (2), gives the partial small-signal AC


voltage gain to be
g ( R || R )
v
Av o = m D L
(4.88),(4)
vi
1 + g m RS
Overall small-signal voltage gain, Gv. As we did in the
previous lecture, we can derive an expression for Gv in terms
of Av. By definition,
v
v v
v
(5)
Gv o = i o = i Av
vsig vsig vi vsig
N
= Av

Whites, EE 320

Lecture 32

Page 4 of 9

Applying voltage division at the input of the small-signal


equivalent circuit in Fig. 4.44(b),
RG
Rin
vi =
vsig =
vsig
(6)
N
Rin + Rsig
R
+
R
(1) G
sig
Substituting (6) into (5) we the overall small-signal AC
voltage gain for this CS amplifier with source degeneration to
be
RG g m ( RD || RL )
Gv =
(4.90),(7)
RG + Rsig 1 + g m RS
Overall small-signal current gain, Gi. Using current division
at the output in the small-signal model above in Fig. 4.44(b)
RD
io =
g m vgs
(8)
RD + RL
while at the input,
v 1 + g m RS
(9)
ii = i =
vgs
N
RG (3) RG
Substituting (9) into (8) we find that the overall small-signal
AC current gain is
i
g m RD
RG
(10)
Gi o =
ii RD + RL 1 + g m RS

Output resistance, Rout. From the small-signal circuit in Fig.


4.44(b) with vsig = 0 then i must be zero leading to
Rout = RD
(11)

Whites, EE 320

Lecture 32

Page 5 of 9

Discussion
Adding RS has a number of effects on the CS amplifier. (Notice,
though, that it doesnt affect the input and output resistances.)
First, observe from (3)
vi
(3)
1 + g m RS
that we can employ RS as a tool to lower vgs relative to vi and
lessen the effects of nonlinear distortion.
vgs =

This RS also has the effect of lowering the small-signal voltage


gain, which we can directly see from (7).
A major benefit, though, of using RS is that the small-signal
voltage (and current) gain can be made much less dependent on
the MOSFET device characteristics. (We saw a similar effect in
the CE BJT amplifier with emitter degeneration.)
We can see this here for the MOSFET CS amplifier using (7)
RG g m ( RD || RL )
Gv =
(7)
RG + Rsig 1 + g m RS
The key factor in this expression is the second one. In the case
that g m RS  1 then

Whites, EE 320

Lecture 32

Gv

RG RD || RL
RG + Rsig RS

Page 6 of 9

(12)

which is no longer dependent on gm.


Conversely, without RS in the circuit ( RS = 0 ), we see from (7)
that Gv g m and is directly dependent on the physical properties
of the transistor (and the biasing) because
i
W
g m d = kn (VGS Vt )
(4.61),(13)
vgs
L
in the case of an NMOS device.
The price we pay for this desirable behavior in (12) where
Gv is not dependent on gm is a reduced value for Gv. This Gv is
largest when RS = 0 , as can be seen from (7).

Example N32.1 (based on text exercises 4.32 and 4.33).


Compute the small-signal voltage gain for the circuit below with
RS = 0 , kn W L = 1 mA/V2, and Vt = 1.5 V. For a 0.4-Vpp
sinusoidal input voltage, what is the amplitude of the output
signal?

Whites, EE 320

Lecture 32

Page 7 of 9

W
mA
kn = 1 2
L
V
Vt = 1.5 V

vO

For the DC analysis, we see that VG = 0 and I D = I S = 0.5 mA.


(Why is VG = 0 ?) Consequently,
VD = 10 RD I D = 10 14k 0.5m = 3 V
Assuming MOSFET operation in the saturation mode
1 W
2
I D = kn (VGS Vt )
2
L
1
2
0.5 mA = 1 103 (VGS 1.5 )
such that
2
VGS 1.5 = 1 VGS = 2.5 V or 0.5 V
or
VS = 2.5 V
Therefore,
for operation in the saturation mode.
For the AC analysis, from (13)
g m = 103 ( 2.5 1.5 ) = 1 mS

Using this result in (7) with RS = 0 gives

Whites, EE 320

Lecture 32

Page 8 of 9

4.7M
V
103 (14k ||14k ) = 6.85
4.7M + 100k
V
For an input sinusoid with 0.4-Vpp amplitude, then
Vo = Gv Vsig = 6.85 0.4 Vpp = 2.74 Vpp
Gv =

Will the MOSFET remain in the saturation mode for the entire
cycle of this output voltage? For operation in the saturation
mode, vDG = vD > Vt = 1.5 V. On the negative swing of the output
voltage,
v
2.74
vD min = VD o ,pp = 3
= 1.63 V
2
2
which is greater than Vt, so the MOSFET will not leave the
saturation mode on the negative swings of the output voltage.
On the positive swings,
v
2.74
vD max = VD + o ,pp = 3 +
= 4.37 V
2
2
which is less than VDD = 10 V so the MOSFET will not cutoff
and leave the saturation mode.
(Interestingly, the MOSFET does leave the saturation mode on
the negative swings for RD = RL = 15 k, as used in the text
exercises 4.32 and 4.33.)
Lastly, imagine that for some reason the input voltage is
increased by a factor of 3 (to 1.2 Vpp). What value of RS can be
used to keep the output voltage unchanged?

Whites, EE 320

Lecture 32

Page 9 of 9

From (7), we can choose RS so that the so-called feedback factor


1 + g m RS equals 3. The output voltage amplitude will then be
unchanged with this increased input voltage.
Hence, for

3 1
2
= 3 = 2 k.
g m 10
With RS = 2 k the new overall small-signal AC voltage gain is
from (7)
V
6.85
6.85
Gv =
=
= 2.28
1 + g m RS
3
V
The overall small-signal voltage gain has gone down, but the
amplitude of the output voltage has stayed the same since the
input voltage amplitude was increased.
1 + g m RS = 3 RS =

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