This document contains the solutions to homework assignment #6 for the Spring 2009 ECE 3040B Microelectronic Circuits course at the Georgia Institute of Technology. It provides answers to multiple problems from the textbook as well as parts a-f for a bipolar junction transistor circuit problem and the values for betaR and IS for a transistor in the reverse active region.
This document contains the solutions to homework assignment #6 for the Spring 2009 ECE 3040B Microelectronic Circuits course at the Georgia Institute of Technology. It provides answers to multiple problems from the textbook as well as parts a-f for a bipolar junction transistor circuit problem and the values for betaR and IS for a transistor in the reverse active region.
ECE 3040B: Microelectronic Circuits Spring Semester 2009, Homework #6 SOLUTIONS
1.
Pierret, Problem 11.2 (a)-(d) (20 points)
ECE 3040B: Homework #6, Solutions
March 6, 2009
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2.
Pierret, Problem 11.8 (a)-(d) (20 points)
3.
Pierret, Problem 12.3 (10 points)
ECE 3040B: Homework #6, Solutions
March 6, 2009
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4.
Bipolar Junction Transistor (30 points): For the
shown transistor, IS = 2 x 10-15 A, F = 100, and R = 0.25. (a) Label the collector, base, and emitter terminals of the transistor. (b) What is the transistor type? (c) Label the base-emitter and base-collector voltages, VBE and VBC, respectively, and label the normal directions for IE, IC, and IB. (d) What is the relationship between VBE and VBC? (e) Write a simplified form of the transport model equations that apply to this particular circuit configuration. Write an expression for IE/IB. Write an expression for IE/IC. (f) Find the values for IE, IC, IB, VBC, and VBE.
(a) - (c) (b) npn transistor
ECE 3040B: Homework #6, Solutions
(d) VBE = VBC
March 6, 2009
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5.
BJT in Reverse-Active Region (20 points): What are the