(Analog) - MS2318 - Design Fundamentals of Implementing An Isolated Half-Bridge Gate Driver
(Analog) - MS2318 - Design Fundamentals of Implementing An Isolated Half-Bridge Gate Driver
MS-2318
Design Fundamentals of
Implementing an Isolated
Half-Bridge Gate Driver
Isolated half-bridge gate drivers are used in many
applications that range from isolated dc-to-dc power supply
modules where high power density and efficiency are
required, to solar inverters where high isolation voltage and
long-term reliability are critical. These design concepts will
be discussed in detail as this article explores the ability of
isolated half-bridge gate driver solutions to provide high
performance and a small solution size.
The isolated half-bridge drivers function is to drive the gates
of high- and low-side N-channel MOSFETs (or IGBTs) with
a low output impedance to reduce the conduction losses, and
a fast switching time to reduce the switching losses. The
high- and low-side drivers need very close matching of the
timing characteristics to allow accurate and efficient
switching. This reduces the deadtime from one switch of the
half bridge turning off before the second switch turns on.
The typical approach to implementing the isolated halfbridge gate drive function is to use an optocoupler for
isolation, followed by a high voltage gate driver IC, as shown
in Figure 1. One potential issue with this circuit is that there
is only one isolated input channel, and it relies on the high
voltage driver to have the needed matching in the timing
between channels, and it also relies on the deadtime needed
for the applications. Another concern is that high voltage
gate drivers do not have galvanic isolation and rely, instead,
on junction isolation to separate the high-side drive voltage
from the low-side drive voltage in the same IC. Parasitic
inductance in the circuit can cause the output voltage, VS, to
go below ground during a low-side switching event. When
this happens, the high-side driver can latch up and become
permanently damaged.
www.analog.com
2012 Analog Devices, Inc. All rights reserved.
MS-2318
Technical Article
www.analog.com
2012 Analog Devices, Inc. All rights reserved.
Technical Article
MS-2318
transient immunity (CMTI) from a standard optocoupler
rated at less than 10 kV/s to as much as 25 kV/s for an
optocoupler gate driver. For many gate drive applications,
25 kV/s CMTI may be enough, but for power supplies with
large transient voltages and for solar inverter applications,
50 kV/s or more CMTI may be needed.
www.analog.com
2012 Analog Devices, Inc. All rights reserved.
MS-2318
Technical Article
In summary, for isolated half-bridge gate driver applications,
the transformer-based digital isolator has been shown to
offer numerous advantages over optocoupler and pulse
transformer-based designs. The solution size and design
complexity are dramatically reduced through integration,
which leads to much improved timing performance.
Robustness is also improved through galvanic isolation of
the output drivers and higher CMTI.
REFERENCES
Technical Article, Common-Mode Transient Immunity, Chris
Coughlin (Analog Devices)
Figure 7. Transformer-Based Digital Isolator ADuM140x with CMTI of
100 kV/s
www.analog.com
2012 Analog Devices, Inc. All rights reserved.