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TO-92L Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD

This document summarizes the specifications of a TPT5610 transistor (PNP) in a TO-92L plastic package from Jiangsu Changjiang Electronics Technology Co., Ltd. The transistor has a power dissipation of 1W at 25°C, a collector current of -1A, and an operating temperature range of -55°C to +150°C. Key electrical characteristics including breakdown voltages, cut-off currents, current gain, saturation voltage, and transition frequency are provided. The transistor is classified based on its current gain into ranks of A, B, or C.

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84 views

TO-92L Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD

This document summarizes the specifications of a TPT5610 transistor (PNP) in a TO-92L plastic package from Jiangsu Changjiang Electronics Technology Co., Ltd. The transistor has a power dissipation of 1W at 25°C, a collector current of -1A, and an operating temperature range of -55°C to +150°C. Key electrical characteristics including breakdown voltages, cut-off currents, current gain, saturation voltage, and transition frequency are provided. The transistor is classified based on its current gain into ranks of A, B, or C.

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file_upd9987
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We take content rights seriously. If you suspect this is your content, claim it here.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92L Plastic-Encapsulate Transistors


TPT5610 TRANSISTOR (PNP)

FEATURES
Power dissipation
P
CM:
1 W (Tamb=25)
Collector current
I
CM:
-1 A
Collector-base voltage
V
(BR)CBO
: -25 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test condi ti ons MIN TYP MAX UNIT
Col l ector-base breakdown vol tage V(BR)CBO Ic=-10A, IE=0 -25 V
Col l ector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -1 A
DC current gai n hFE VCE=-2V, IC=-500mA 60 240
Col l ector-emitter saturati on vol tage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V
Transi ti on frequency fT VCE=-2V, IC=-500mA 350 MHz
Col l ector output capacitance Cob VCB=-10V, IE=0, f=1MHz 38 pF




CLASSIFICATION OF h
FE

Rank A B C
Range
60-120 85-170 120-240



1 2 3

TO-92L


1. EMITTER

2. COLLECTOR

3. BASE

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