August. 2008. Version 2.0 MagnaChip Semiconductor Ltd.

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Absoloute Maximun Ratings (Ta = 25
o
C)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
TC=25
o
C 50 A
Continuous Drain Current
(1)

TC=100
o
C
ID
50 A
Pulsed Drain Current IDM 150 A
TC=25
o
C 50
Power Dissipation
TC=100
o
C
PD
25
W
TA=25
o
C 3
Power Dissipation
TA=70
o
C
PDSM
2.1
W
Single Pulse Avalanche Energy
(2)
EAS 100 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150
o
C

Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient
(1)
RJA 45
Thermal Resistance, Junction-to-Case RJC 2.5
o
C/W

MDD1653
30V N-channel Trench MOSFET : 30V, 50A, 8.5m

Features

V
DS
= 30V
I
D
= 50A @V
GS
= 10V
R
DS(ON)

< 8.5m @V
GS
= 10V
< 14.0m @V
GS
= 4.5V
General Description

The MDD1653 uses advanced Magnachips
MOSFET Technology, which provides high
performance in on-state resistance, fast switching
performance and excellent quality. MDD1653 is
suitable device for PWM, Load Switching and
general purpose applications.





August. 2008. Version 2.0 MagnaChip Semiconductor Ltd. 2
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Electrical Characteristics (Ta =25
o
C)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS ID = 250A, VGS = 0V 30 - -
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.9 3
V
Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - - 1
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1
A
VGS = 10V, ID = 30A - 7.5 8.5
VGS = 4.5V, ID = 20A - 11.5 14 Drain-Source ON Resistance RDS(ON)
VGS = -2.5V, ID = -6.9A - - -
m
On-State Drain Current ID(ON) VDS = 5V, VGS = 10V 100 - - A
Forward Transconductance gfs VDS = 5V, ID = 10A - 35 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) - 17.6 -
Total Gate Charge Qg(4.5V) - 9.2 -
Gate-Source Charge Qgs - 3.0 -
Gate-Drain Charge Qgd
VDS = 12.5V, ID = 20A, VGS = 10V
- 3.8 -
nC
Input Capacitance Ciss - 900 -
Reverse Transfer Capacitance Crss - 135 -
Output Capacitance Coss
VDS = 12.5V, VGS = 0V, f = 1.0MHz
- 260 -
pF
Turn-On Delay Time td(on) - 6.2 -
Rise Time tr - 21.8 -
Trun-Off Delay Time td(off) - 17.6 -
Fall Time tf
VGS = 10V, VDS = 12.5V, RL = 0.6,
RG = 3
- 10.6 -
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward
Voltage
VSD IS = 1A, VGS = 0V - 0.71 - V
Body Diode Reverse Recovery
Time
trr - 25.0 - ns
Body Diode Reverse Recovery
Charge
Qrr
IF = 20A, dl/dt = 100A/s
- 14.0 - nC

Note :

1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ = 25C, L = 1mH, IAS = 10A, VDD = 15V, VGS = 10V.





Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDD1653T -55~150
o
C D-PAK Tube Halogen Free
MDD1653R -55~150
o
C D-PAK Tape & Reel Halogen Free




August. 2008. Version 2.0 MagnaChip Semiconductor Ltd. 3
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0 1 2 3 4 5
20
40
60
V
GS
, Gate-Source Voltage [V]
T
A
=125
25
Notes:
V
DS
=5V

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature

Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward
Voltage Variation with Source
Current and Temperature
0 1 2 3 4 5
0
20
40
60
80
100
3.5V
4.0V
4.5V
6.0V
5.0V 10V
3.0V


I
D
,

D
r
a
i
n

C
u
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
0 10 20 30 40 50 60
0.0
0.1
0.2
10V
4.5V


D
r
a
i
n
-
S
o
u
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c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
[
o
h
m
]
I
D
, Drain Current [A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Notes :
1. V
GS
= 10 V
2. I
D
= 20 A


R
D
S
(
O
N
)
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
2 4 6 8 10
0
5
10
15
20
25
30
T
A
= 25
T
A
= 125

R
D
S
(
O
N
)

[
m

]
,
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
, Gate to Source Volatge [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
T
A
=125
Notes :
V
GS
= 0V
25


I
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,

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e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
SD
, Source-Drain voltage [V]




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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area Fig.10 Unclamped Inductive
Switching Capability
Fig.11 Maximum Drain Current
Vs. Case Temperature
Fig.12 Transient Thermal Response
Curve
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
1s
100 s
100 ms

DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J
=Max rated
T
A
=25

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
1E-5 1E-4 1E-3
10
100
T
J
=25

I
(
A
S
)
,

A
V
A
L
A
N
C
H
E

C
U
R
R
E
N
T

(
A
)
t
AV
, TIME IN AVALANCHE (ms)
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
Notes:
DutyFactor, D=t
1
/t
2
PEAKT
J
=P
DM
* Z
JC
* R
JC
(t) +T
C
R
JA
=96 /W
singlepulse
D=0.5
0.02
0.2
0.05
0.1
0.01


Z

J
C (
t
)
,

N
o
r
m
a
l
i
z
e
d

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t
1
, Rectangular Pulse Duration [sec]
0 5 10 15
0
2
4
6
8
10
Note : I
D
= 20A


V
G
S
,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

[
V
]
Q
G
, Total Gate Charge [nC]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [ ]
0 10 20 30
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss


C
a
p
a
c
i
t
a
n
c
e

[
p
F
]
V
DS
, Drain-Source Voltage [V]




August. 2008. Version 2.0 MagnaChip Semiconductor Ltd. 5
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Fig13. Single Pulse Maximum
Power Dissipation
Fig14. Single Pulse Maximum Peak
Current
1E-3 0.01 0.1 1 10 100 1000
0
20
40
60
80
100
Single Pulse
R
JA
=77 /W
T
A
=25


P
(
p
k
)
,

P
e
a
k

T
r
a
n
s
i
e
n
t

P
o
w
e
r

[
W
]
T
1
, Time [sec]
1E-3 0.01 0.1 1 10 100 1000
0
20
40
60
80
100
Single Pulse
R
JA
=96 /W
T
A
=25


I
(
p
k
)
,

P
e
a
k

T
r
a
n
s
i
e
n
t

C
u
r
r
e
n
t

[
A
]
T
1
, Time [sec]




August. 2008. Version 2.0 MagnaChip Semiconductor Ltd. 6
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Package Dimension































































August. 2008. Version 2.0 MagnaChip Semiconductor Ltd. 7
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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft,
nuclear power generation, medical appliances, and devices or systems in which malfunction of any
Product can reasonably be expected to result in a personal injury. Sellers customers using or
selling Sellers products for use in such applications do so at their own risk and agree to fully defend
and indemnify Seller.






MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.