TO-220 Plastic-Encapsulate Transistors: Features
TO-220 Plastic-Encapsulate Transistors: Features
2SC2073
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 1.5 W (Tamb=25)
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 150 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100A, IE=0 150 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 150 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=120V, IE=0 10 A
Emitter cut-off current IEBO VEB=5V, IC=0 10 A
DC current gain hFE(1) VCE=10V, IC=500mA 40 140
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1.5 V
Base-emitter voltage VBE VCE=10V, IC=500mA 0.65 0.85 V
Transition frequency fT VCE=10V, IC=500mA 4 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 35 pF
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