' I

Serial No.
Engineering SeJVices Examination-20J 3
(A-FRF-M-DSA]
ELECTRONICS AND
TELECOMMUNICATION ENGINEERING
Paper-1
(Conventional)
[Time Allowed : Three Hours) (Maximum Marks : 200)
INSTRUCTIONS
Please read each of the following instructions
carefully before attempting questions :
Candidates should attempt FIVE questions in all.
Question No. 1 is compulsory. Out of the remaining
SIX questions attempt any FOUR.
All questions carry equal marks. The number of
marks carried by a part of a question is indicated
against it.
Answers must be written in ENGLISH only.
Assume suitable data, if necessary and indicate
the same clearly.
Unless otherwise mentioned, symbols and notations
have their usual standard meanings.
Values of the following constants may be used as
indicated wherever necessary :
Electronic charge = -1.6 X 1 o-
19
coulomb
Free space permeability = 4 Jr X 1 rr
7
Henrylm
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FreespoceJbminivity = (JI36lr) x Jff
9
Faradl m
Velocity of lighJ in free space = 3 x 1 ff mls
Boltzmann constant = 1.38 x J(T
23
JIK
Planck constant :.::: 6.626 x Jo-
34
J-s
Neat sketches may be drawn, wherever required.
All parts and sub-parts of a question are to be
attempted together in the answer boo/c.
Any pages left blank in the answer boolc must be
clearly struck out.
I. (a) (i) What are ferroelectric materials ? What
advantages do they have over conventional
dielectric materials ? 3
(ii) Give one example each of a dielectric and
a ferroelectric material having high relative
permittivity ( e ,). 2
(b) P-n junction transistors can be fabricated using
the materials Gennanium and Silicon. Hcwever
silicon is preferred to Germanium. Explain. 5
(c) Find the power spectral density if autocorrelation
function is given as :
Rx_(-r) = e-u l<tl for -oo < t < >.
5
(Contd.)
\. '
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(d) Find v
1
and v
2
by \\Titing a single supemode
equation for the given circuit. 5
40 30
I
60t
12VQ
12!1
24V
I
I
I
I
I i
Fig.. Q. l(d)
(e) T\\o concentric spherical shells (r
1
= 5 em and
r
2
= 30 em) are applied with -- 10 V and +120 V
respectively. The dielectric medium between the
shells has e = 2.2. Find the charge densities.
r
Determine the locatjon where the V = 50 V. 5
(t) Three signals (0. 1 GHz, 1 GHz and 10 GHz) are
available for propagation. Will it be possible to
send all of them through a parallel plate air filled
waveguide with a separation of 12 em between
the plates ? S
(g) In an oscilloscope X- and Y -signals both are saw-
tooth waves of same amplitudes and time periods
but different phase angles. If Y-input is leading
the X-input by 90" draw the pattern traced on
the CRO screen. Take the saw-tooth signals with
positive slopes. 5
(Contd.)
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(h) (a') Explain in brief the working of the circuit
shown when:
v.
I
(i) the switch S
1
is ON
(ii) 8
1
is OFF.
(b') What will be the output V when V. is
0 I
5 sin 100 ttt and :
<
S
2
0N
(i) S
1
is OFF
S
2
OFF
<
S
2
0N
(ii) S
1
is ON 5
S
2
OFF
s2
>---41>---------e v
0
Fig. Q. l(h)
0
(Contd.)

..
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2. (a) What are the expressions for series and parallel
resonances of the equivalent circuit of a quartz
crystal oscillator ?
5
(b) A quartz crystal oscillator has an equivalent
inductance of L = 1 0 mH and series and parallel
capacitances of C = 1 0 ~ and C = 1 0 J.!F. Find
s
p
the series and parallel resonant frequencies of
this oscillator.
(c) Show schematically the static characteristics of
a thyristor identifying clearly various regions.
5
(d) What is a direct band gap and an indirect band
gap semiconductor ?
5
(e) Explain why a silicon diode can not be used as
a LED but it is useful as a photodiode ? 5
(f) If Si diode is used as a photodiode find the
maximum value of responsivity and maximum
wavelength upto which it can be used. 10
(g) A magnetically levitated train travels between
the city centre and the airport in Shanghai,
China. Which peculiar property of super
conductivity is taken advantage of in this
application ?
5
(Contd.)
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3. (a) A zener diode regulates at 50 V over a range of
diode circuits from 5 mA to 40 mA Supply voltage
v = 200 v.
(i) Calculate the value of R to allow voltage
regulation from a load current ~ = 0 upto
I , the maximum possible value of I . 5
r n ~
'L
(ii) What is I ?
max
5
(b) A half wave rectifier having a diode with an internal
resistance of 20 Q is to supply power to a 1 kQ
load from a 110 V ( rms) source of supply.
Do the following :
(a) Draw a schematic that represents the above
description of the circuit.
Also calculate :
(b) Peak load current
(c) DC load current
(d) AC load current
(e) DC diode voltage. 10
(Contd.)
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(c) For the circuit shown, neglecting base currents
find 1
0
and 1
1
, 1
2
, 1
3
. 10
I
\VI
1
1
1.4 K
1
'----R,--R, 300 500 0
I
6
-6V
Fig. Q .. 3(c)
(d) In the follov.'ing circuit :
t:j o,
L
I
: Q, v.,
-1 _ _l_
- -
- -
Fig. Q. 3(d)
(j)
(Contd.)
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ifVDD = 10 v, vtn =I vtp I = IV, fln Cox=
2 JJP Cox= 20 J..1AIV
2
, W = 100 j.lm, L = 10 J..lm
and I VA I = Early voltage = 100 V both for n and
p devices, I f = 1 00 JJA, find the small signal
re
voltage gain.
10
4. (a) Find the energy E of the signal x(t) = e-at u(t).
X
Determine the frequency W (radlsec) so that the
energy contributed by the spectral components
of all frequencies below W is 95% of the signal
energy.
10
(b) Given that X(w) is the Fourier transform of x(t).
Find the Fourier transform of following in terms
of X(w) :
(i) x
1
(t) = x(1 - t) + x(-1 - t)
(ii) x
2
(t) = x( 4t - 5)
d
2
x
(iii) X (t) = -(t - })
3 dt2

10
(Contd.)
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(c) The output y(t) of a continuous time LTI system
is found to be 3e-4t u(t) when the input x(t) is
u(t).
(i) Find the impulse response h(t) of the system.
(ii) Find the output y(t) when the input x(t) is
e-t u(t).
10
(d) Consider the discrete time system as shown in
the figure below.
x(n) ---i
1---------1 r 1
q( n)
+
y(n)
Fig. Q. 4(d)
For what value of K is the system BIBO stable ?
10

(Contd.)
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5. (a) State and prove maximum power transfer theorem
for a circuit with source V s and source resistance
~ and a variable load resistance ~ 10
(b) If ~ is ftXed and Rs is varied will the formula
be valid ? Prove.
10
(c) For the circuit shown determine ZL that will draw
maximum power from the source.
10
Fig. Q. S(c)
(d) Determine the h-parameters of the network shown.
10
3v
"
+
500
v
ll
Fig. Q. S(d)
@
(Contd.)
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6. (a) A pair of isolated parallel power lines of I em
radius with a separation of 90 em have a voltage
difference of 440 V. These power lines are
60 em above a pair of telephone lines. Find the
voltage difference between the telephone lines
due to induction from power lines. The telephone
lines are separated by 20 em. 10
(b) Two coils kept on a common axis are separated
by 12 em. Coil A has 1 0 turns of radius 4 em
with a current of I A. Coil B has 5 turns of wire
with a radius of 6 em. The current in Coil B is
to be determined such that the induced magnetic
field due to this current cancels the magnetic
field at the center of Coil A generated by Coil A.
10
B
A
n = 10 turns
I = 1 A
A
Fig. Q. 6(b)
@
(Contd.)
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(c) Derive the expression for the power required to
move a current carrying conductor at a rotational
frequency ofN rev/min if it is placed in a magnetic
field of flux density B
0
ar . Find the value with
the given data: B = 0.6 T; I= 10 A; L = 1.2 m;
0
N = 25 rev/min, r = 2 em. From this determine
the magnetic flux density to be applied if the
power is to be 1.5 W.
10
z
.... --- ... -- .. _
--- ----
~ ~ ~ y
_ .. ------ .. _
X
_______ .....
I
Fig. Q. 6(c)
(d) A plane wave travelling in the +z direction in
free space (z < 0) is normally incident at z = 0
on a conductor (z > 0) for which cr = 61.7 MS/m,
@ (Contd.)
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f..1 = 1. The free space wave has a frequency of
r
2.5 MHz. The E field amplitude is 1.5 V /m at
the interface. Find the expression for H in the
conductor.
10
7. (a) In the circuit shown, R is a resistive transducer.
The bridge is balanced and the output, V = 0
0
when R
3
= R. Now R is changing in response to
a physical variable. Show that the output voltage
V =V (t+ R2) ~ R
0
R R
1
2 R ~ R
where ~ R is the change in the value of R. 20
VR
Fig. Q. 7(a)
@
(Contd.)
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(b) In the circuit s o ~ the output voltag.e is found
to be 25 m V. If the optical power input is at a
wavelength, l = 1.32 ~ calculate the optical
m
power in J.1 W. Take the quantum efficiency of the
photo-diode to be 65%.
+5V
- --
-
Fig. Q .. 7(b)
10
10 k
(c) Overall quantum efficiency of GaAs light emitting
diode shown in the circuit is 70o/o. ON state diode
voltage is 1.8 V. V. is a binary signal with
1
V(l) ::.; 5 V and V(O) = 0 V. Find the logic levels
(Contd.)
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of the optical binary output. Take band-gap energy
for GaAs = 1.43 eV.
10
1500
+lOV
l kQ
Fig. Q. 7(c)
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Sl. No.
Enuiil&z,i a:J Services Examination20f 7
v ,.
-
I AFRFM-DSB I
ELECTRONICS AND
TELECOMMUNICATION
ENGINEERING
PAPER H
(CONVENTIONAL)
I Time Allowed: Three Hqurs I I Maximum Marks : 2()() I
INSTRUCTIONS
Please read eacb of the following instructions
carefully before attempting questions
Candidates should auempl FIVE questions in all.
Question No. 1 is compulsory. Out of the
remaining SIX que.w'ons attempt any FOUR.
All questions carry equal marks. The number of
marks carried by a part of a question is
indicated against it.
Answers must be wril/en in. ENGLISH only.
Assume suitable data, if necessary, and indicate
the same clearly.
Unless otherwise mentioned, symbols wd
notations have their usual standard meanings.
Neat sketches may be drawn, wherever required.
All pans and sub-part.s of a question are to be
attempted rogether in the m1swer book.
Any pages left blank in: the answer book must be
clearly struck out.
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1. (a)
Thre shold
Trig gcr
~ r g e
m
Disc
p
6
2
7
+12V
ltcset
8
4
Timer
3
555
Outp Ul
I 5
- 12 v
In the JC Timer 555 shown in the above figure
determine the reference level s for the two
comparators inside the chip. Justify your
answer by drawing a block diagram of the
internal circuit of IC Timer 555. 5
A-FRF-M-DSB 2
(Contd.)
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(b)
+12V - r - - - - - - - - - - - - ~
Q,
Q, ")-,.----;:;;..;:.:.... _ __ -(" Q,
L------+0
Lu,
Q, .J-L--- - - --r:
12 v - '----------'
Assuming matched transistors with large f3
(i.e. negligible base currents), determine the
currents /
0 1
and /
02
in the circuit given in the
above figure. Assume that nodes @ and Q)
are connected at appropriate voltages which
ensure that transistors Q
5
Q
2
and Q
3
are m
active region. 5
(c) Find the minimum expression of
Y = n m (0, 1, 3. 5, 6, 7, 10, 14. 15)
in product-of-sum (POS) form. 5
AFRF-MDSB 3 (Contd.)
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(d)
R s ) - ~
k
s(S+o)
1--.-- C(s)
If the resonant peak (M,) and resonant
frequency (W,) of the closed-loop frequency-
response of the system given above are
M, = 104 and W, = 11 55 rad/ sec, find the
values of k and a. 5
(e) Find the ratio of stimulated emission rate
to the spontaneous emission rate operating
at a temperature of 2ooc and the average
operating wavelength is I ,urn. 5
(f) An optical fibre with a core diagram 2 .urn and
core refractive index of 148 and a cladding
refractive index of ! 46. Determine
(i) the critical angle at the core-cl adding
interface,
(ii) the numerical aperture for the fibre. 5
A-FRP-M-DSB 4
(Contd.)
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(g) Give the Energy-band diagram for three valley
model for InP Gunn-diode. Also compare the
peak to valley current ratio for ntype GaAS
and n-type InP. Why lnP diode is superior 10
GaAS diode 7 2+2+1
(h) Convert Hexadecimal number A5FI to
2. (a)
equivalent octal number. 5
Voo

I
M,

I
.w,
. ....

The above figure shows a source follower
using m-channel MOSFETs. Assuming thai
M
1
and M
2
both are in samration and h4ve
different transconductance parameters K
1
and
K
2
where K; = .Un;ox( 7) i ; I = I, 2 and
symbols have their usual meaning. Derive an
expression for V oul' in tertns of V, . V
00
, V
5

V
8
, V,h and K
1
K
2
. Find out the small signal
voltage gain and DC offset voltage appearing
at the output. I 0
A-FRFMDSB
5
(Contd.)
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(b)
~ c
Ro
r---l +
>---+---- J'o
R,
Assuming the gain A of the op-amp to be
represented by A s ~ ~ where w, is the gain-
bandwidth-produ.ct of the op-amp, analyze the
given circuit and determine under what condi
tion, the circuit can generate sinusoidal signal
at the ou1put ? What is the frequency of
the ouiput waveform if R
1
= I K!2, R
2
= 9 K!l ,
~ = 0 1 JJFandR
0
= IOK!2? 10
A-FRF-M-DSB 6
(Contd.)
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(c)
R,
o
''" 1------ ::--- -t ,,,

~ J Q, Q.'J.-
+ L..__, _ _.("
v,
For the circuit shown in the above figure
determine by relevant analysis, under what
conditions lhe out(>Ul voltage is pro(>Ortional to
the multiplication of the two inputs V
1
and V
2
.
Derive an expression for v
0
in tenns of 1
8
V
1
and v2. 10
A-FRF-M-DSB 7 (Contd.)
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(d)
1-..
-
I'
..
R,

1',
Explain the operation of the circuit shown in
the above figure and determine under what
condition the output current (/L) can be made
independent of load voir age ? I 0
3. (a) Design a counter that has a repearcd sequence
of six states as given in the table below :
Count
A B c
0 0 0
0 0 I
0 1 0
I 0 0
I 0 I
I I 0
20
AFRF-M-DSB 8
(Contd.)
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(b) Reduce the following state diagram and also
write the reduced state table. 20
)----?--( e
.,,
f
,,,
There are infinite number of input sequences
that can be considered. the input
sequence 0 I 0 I 0 II 0 I 00 starting from the initial
state 'a'.
A-FRF-M-DSB
9 (Contd.)
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4. (a) Consider a feedback system whose open-loop
transfer function is given by
K
G(s)H(s) = , where K > 0 ~ n d T > 0.
s(l + Ts)
Using the Nyquist stability criterion. find
whether the closed-loop system is stable or
not. 20
(b) Using polar plot method. find the gain margin of
a feedback system whose open-loop transfec
function is given by
G(s)H(s) = ().
75
s(l +sXI +05s)
10
(c) Consider a feedbac k system with characteristic
equation
.
K
I + cO.
s(s + lXs+ 2}
Compute the angles of the asymptotes of the
root-locus br.mches with the real axis of the
s-plane. Also find the centroid and the
breakaway points of the root-locus of the
$ystem. Assume that K varies from 0 10 "" 10
A-FRF-M-DSB 10
(Contd.)
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5. (a) Assume a Binary symmetric channel with
probability of incorrect reception (p) = and
probability of comet rtception (q) = . Let all
the transmitted symbols {xt . x
2
} be equally
probable i.e. p(O) = p(l) = ! Calculate the
improvements in rate of transmission by 2
and 3 repetitions of the input. 10
(b) Evaluate the radiation or far-field of short
Magnetic Dipole and its equivalent small loop.
10
(c)
z
A V-shaped antenna is shown in the above
figure . The current distribution on the antenna
is given by I = 1
0
cos (Krj<) and the length
of the antenna is /. Find the maximum field
strength along the x-axis if I= i and a = 45".
10
A-PRF-M-DSB
I I (Contd.)
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(d)
x
1
( 11]
y,[ll}
Calculate the rate of joint information
transmission for the above channel. Assume
p(x
1
) = p(x
2
) = where (X) = {x
1
, .r
2
} is the
set of input symbols.
Assume q -4 Probability of correct reception.
p = Probability of incorrect reception
and
{Y) ={y
1
.Y2Y3Y
4
} be the set of
rtt.eived symbols. 10
A-FRF-M-DSB
12
(Contd.)

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6. (a) Give the small signal equivalent circuit of
MESFET (Metal Semiconductor Field Effect
Transistor). Identify intrinsic clements and
extrinsic elements in the small signal circuit A
certain MESFET has the following parameters:
Rs (source gate resistance) = 3 !1
R; (input resistance) = 25 !1
gm (transconductance) = 50 m U
Rd (drain resistance) = 450 !1
Rs (source resistance) = 25 !1
C
1
, (gate source capacitance) = 065 pF
Detennine
(i) the cut-off frequency and
(ii) maximum operating frequency. 4+2+4
(b) the power gain of n horn antenna of
square aperture. have the dimension of euch
side 4A.
The power gain of a circular mouth parabolic
antenna is 1600 at a wavelength of 10 em.
Calculate the diameter of the mouth and half
power beam width of the antenna.
What are
lOrS?
A-FRF-M-DSB
the drawbacks of parabolic retlec-
4+3+3
l3
(Contd.)
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(c) Define critical frequency. skip distance and
maximum usable frequency. What are 1wo
most important layers of ionosphere for
communication 1 A geostationary communica-
tion satellite has an uplink frequency of 6 GHz
with antenna el evation of 5. If the transmi uer
power is I kW and the antenna gain of the
transm.iller and receiver are 60 dB respectively,
calculate the received power at the input of the
satellite receiver. 6+4
(d) What is a Bolometer ? How many types of
Bolometer exist ?
Two directional couplers (20 dB) are used in a
guide to sample the incident and reflected
powers. The outputs of the two couplers are
3 MW and 01 MW respectively. What is the
value of VSWR in the main waveguide and the
value of reflected power 1 1+3+6
7. (a) Write a C program for Bubble Soning a list of
8 numbers given in your program. The exact
numbers may be arbitrarily chosen. 10
A-FRF-M-DSB 14
(Contd.)


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(b) Show a complete si mple block diagram of a
typical computer in as much details as
possible. explaining briefly the role of each
block particular those of
(i) Control Unit
(ii) Main Memory. 10
(c) Explain differem types of interrupts available
in an 8085 microprocessor in details. 10
(d) (i) Draw complete block diagram for
processor to memory communication. 5
(ii) Draw complete block diagram for
processor to 110 communication. 5
A-FRF-M-DSB
15
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