viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
1>SEMICONDUCTOR MATERIAL
1> esckIepIm
eGLicRtUnikCavisymYyEdlKYr[kt;sMKal;kgcMeNamvisybeckviTaepSgeTot KWmankar
pas;bry:agqab;rhs. kgenaH ]bkrN_eRbIR)as;epSg KWkan;EttUceTAEdlminKYr[eCO.
bcb,nenHRbBneGLicRtUnikepSgEdleRbIR)as;
KWmanTMhMtUcCagTMhMRbBneGLicRtUnicEdleK)an
eRbIR)as;BIdMbUg. IC dMbUgbegIteLIgedayelak Jack
Kilby kgeBleFVIkarkgRkumhun Texas Instrument
kgqaM 1958 rUb 1>1. enAkgqaM 2000 Intel
Pentiun4 processor EdlmanRtg;suIsr 42 million
ehIyrhUtmkdl;qaM2010 8-Core Xeon NehalemEX Processor manRtg;suIsr 2.300 million
Rtg;ssuI rRtUv)andak;[eRbIR)as; eTIbmanTMhMtUc
CagRmamdeTAeTotenaH.
]bkrN_TaMgenHekItmaneLIgedayktabIy:agKW
KuNPaBn]bkrN_Bak;kNalcMlg/ beckeTskg
karbegIt nigkarkMNt;neragcRkRBmTaMgdMeNIrkar
rUb1>1 elak Jack Kilby
rbs;]bkrN_pal;.
R
2> rUbFatuBak;kNalcMlg (SEMICONDUCTOR)
rUbFatuBak;kNalcMlg Silicon Germaanium KW
karbegIteLIgnUvRKb;eRKOgeGLicRtUnic Solid. State epSgTaMgGs;(hard Crystal Structure)
bkCa IC enaH RtUvcab;epImeLIgedayrUbFatuBak;kNalcMlgEdlmanKuNPaBx<s;.
rUbFatuBak;kNalcMlg CarUbFatuEdlsitkgRkumBiessEdlmanlkNcMlgsitenAcenaH Evg
rUbFatucMlgl nigGIsULg;.
CaTUeTArUbFatuBak;kNalcMlgEckCaBIrRkum KWRkumEdlCaFatuEtmYy(Single-Crystal) dg
RkumEdlCaFatupSM (Compound). RkumEdlCa Single-Crystal mandUcCa Germanium (Ge) nig Silicon
Electronic Circuit Theory &Electronic Lab
-1-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
TaMgBIrenHmanTMrg;RKwsal;pn ehIyRkumEdlCa Compound mandUcCa Gallium Arsenide (GaAs) ,
Cadmium Sulfide (CdS), Gallium Nitride (GaN) nig Gallium Arsenide Phosphide (GaAsP)
KWbegIteLIgedayrUbFatuBIr beRcInrYmpSMKaEdlmanTMrg; GatUc xusKa.
kgcMeNamrUbFatuBak;kNalcMlgTaMgGs;xagelIma
nEtrUbFatuBak;kNalcMlgbIeTEdleK eRbIR)as;jwkjab;
kgkarbegIteRKOgeGLicRtUnic kgenaHKW Germanium (Ge),
Silicon (Si) ehIynig Gallium Arsenide (GaAs).
enAbu:nanTsvtSr_munkarrkeXIj Diode kgqaM1939
nigRtg;suIsrqaM1947 rUbFatu Germanium RtUv)aneK
eRbIR)as;CarUbFatuBak;kNalcMlg EtmYybu:eNaH eRBaHfa
vagayRsYlkgkar EsVgrk ehIymancMnYneRcIneTotpg.
minEtbu:eNaH rUbFatuenHenAeBlenaHkmankargayRsYlkg
karcMr:aj;edIm,ITTYl)annUvkMritnrUbFatusuTkMritx<s; CaBiess
eTAeTotKWeragcRkgayRsYlkgkardMeNIr karnkarcMr:aj;.
rUb1>2 Integrated Circuit dMbUgeK eTaHCay:agenHkIklkNenH)anGUsbnayrhUtdl;edImqaMn
nig Computer chip rbs; Intel karrkeXIjdt nig Rtg;suIsr ehIyvaeRbIR)as;edayrUbFatu
Germanium CarUbFatuRKwHkgkarbegItvaeLIgedayrgnUvkMrit
eCOCak;Tabkgkarpas;brsItuNPaBeBleRbIR)as;enaH. enAeBlenaHEdlGkviTasasbgaj[dwg
nUvrUbFatuBak;kNalcMlgfI KW Silicon EdlmankMriteCOCak;x<s;Cagmunkgkarpas;brsItuNPaBeBl
eRbIR)as; bu:EndMeNIrkarnkarcMr:aj;yk Silicon EdlsuTl KWsitenAkgkarviDnenAeLIy. eTaHCa
y:agNakCacugeRkaykgqaM1954 Rtg;suIsrEdlbegIteLIgBI Silicon RtUv)anbgaj[eXIj ehIy
cab;BIeBlenaHmk Silicon kkayCarUbFatuBak;kNalcMlgEdleBjniymy:agqab;rhs. Silicon
minRtwmEtrUbFatuEdlmanlkNERbRbYltamsItuNPaBenaHeT EfmTaMgCarUbFatuEdlsMbUrenAelIEpn dI
dUcenHminxVl;BIkgVHxatkgkarcMr:aj;enaHeT.
minyUrbu:nanvisyeGLicRtUnickmankarviDn_y:agqab;rhs RbBnkuMBTrdMeNIrkarkan;EtelOn
eTA ehIyRbBnTUrKmnaKmn_dMeNIrkarkan;EteFVI[mnusSgayRsYl. tMrUvkarfInkarCYbRbTHnUv
smtPaBrbs;]bkrN_Bak;kNalcMlgRtUv)anrkeXIj. ehtuenHkarbegItnUvRtg;suIsrEdleFVIBIFatu
Gallium Arsenide (GaAs) )anekItmaneLIgkgedImTsvtSr_qaM1970 . Rtg;suIsrfIenHmanel,n
(Si)
Electronic Circuit Theory &Electronic Lab
-2-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
dMeNIrkarelOnCagRtg;suIsrEdleFVIBIFatu Silicon ebIeTaHCay:agenHkedaykeKnUvEtniymeRbIRtg;suI
srEdleFVIBI Silicon dEdl edayFatu GaAs mankarBi)akkgkarcMr:aj;[suT ehIymantMlfeTot.
TaMgenHminEmnbBaak;fa GaAs RtUv)aneKeRbIR)as;sMrab;begIt]bkrN_ Solid-State Pam
edayEtgcMr:aj; Germanium enaHeT Germanium enAEtplitedIm,IbegIt Solid-State dEdl Etkar
eRbIR)as;mankMrit edayvamantMlefak ehIyminEtbu:eNaH rUbFatu Silicon CaFatueBjniymCaeKkg
karbegIt Solid-State TaMgeRKOgeGLicRtUnicepSg nig IC.
3> RbBnkUvaLg; nigrUbFatu Intrinsic
edIm,IbBaak;[)anc,as;las;fa ehtuGVI)anCarUbFatu Silicon (Si), Germanium (Ge) nig Gallium
CarUbFatuBak;kNalcMlgEdlRtUv)aneRCIserIssMrab;]sSahkmeGLic
Arsenide
(GaAs)
RtUnictMrUv[mankaryl;dwgxHBITrM g;GatUmnrUbFatuTaMgenH RBmTaMgGatUmEdlcgCamYyKaedIm,IbegIt
4 va:Lg;eGLicRtug
Silicon
Germanimium
5va:Lg;eGLicRtug
3 va:Lg;eGLicRtug
Gallium
Asenic
rUb1>3TMrg;GatUmrbs;rbU FatuBak;kNalcMlg
Electronic Circuit Theory &Electronic Lab
-3-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
TMrg;RKIsal;. enARKb;GatUmTaMgGs;RtUv)anbegIteLIgedaycMENkbIy:agKW eGLicRtug/ RbUtug nig
NWtRtug. kgTMrg;CabnH NWtRtug nigRbUtug begIt)annuyEkGUl ehIyeGLicRtugmaneLIgenAelI Kng
nigCMuvijnuyEkGUl.
dUc)anbgajkgrUbxagelI Silicon eGLicRtug 14 EdlenACuMvijnuyEkGUl Germaniun man eGLicRtug
32 / Gallium maneGLicRtug 31 nig Arsenic maneGLicRtug33 rUbFatuEdllkN KImIRsedognwg
Arsenic CarUbFatuKImIEdlBulbMput. sMrab; Germanium nig Silicon maneGLicRtug 4
EdlsitenARsTab;eRkAEdleK[eQaHfa v:aLg;eGLicRtug eRkABIenaH Gallium maneGLicRtug v:aLg; 3
nig Arsenic maneGLicRtugv:aLg; 5.
GatUmTaMgLayEdlmanv:aLg;eGLicRtug 4
ehAfa etRtav:aLg; ehIyGatUmNaEdl
manv:aLg;eGLicRtug 3 ehAfa RTIv:aLg;
ehIyGatUmEdlmanv:aLg; eGLicRtug 5
ehAfa b:g;tav:aLg;. cMENkv:aLg;eRbIR)as;
edIm,IbBaak;BIbU:tg;Esl
(ionization
Potential)
EdlRtUvkaredIm,Idk
ykeGLicRtugNamYy
BITrM g;GatUm
RsTab;v:aLg;
TaMgenHticCagtMrUvkar
rUb1>4 sm<nkUv:aLg;nGatUm Silicon
bU:tg;EslEdlRtUvkaredIm,Idkyk eGLic
RtugBIRsTab;epSgeTotEdlsitenAxagkgnTMrg;GatUm.
enAkgRKIsal; Silicon bk
suT eGLiRtugv:aLg; 4
Germanium
nGatUmmYybegIt)anCa sm<nduMcMNg
mYyEdlmanGatUmrYmpSMcMnYn 4 bsm<n.
sm<nnGatUmenHrwgmaMCab;Kaedaysar
eGLicRtugrYm
EdllkNenHehAfa
sm<nkUv:aLg;.
edaysar
GaAa
CarUbFatuBak;kNalcMlgEdl pSMBI Gallium
rUb 1>5 sm<nkUv:aLg;nGatUmRKIsal; GaAs nig
enaH
Arsenic
Electronic Circuit Theory &Electronic Lab
-4-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
eGLicRtugrYm)anBIGatUmBIrRbePTxusKadUckg rUb 1>5 RKb;GatUm nImYyenACuMvijeday
GatUmnRbePTEdlbEnm (As b Ga). vaenAEtmaneGLicRtugrYmdUcTMrg;GatUm rbs; Ge nig Si dEdl
bu:EneBlenHeGLicRtugv:aLg; 5 rbs;GatUm Arsenic cUlpSMCamYyeGLicRtug v:aLg; 3 rbs;GatUm
Galliun .
ebIeTaHbICasm<nkUv:aLg;CacMNgdrwgmaMrvageGLicRtugv:aLg; ehIynigGatUmKUvakedaykvaenA
EtmanlTPaBsMrab;eGLicRtugv:aLg; edIm,IRsUbykfamBledIm,IbegIt[manclnaBImCdanxageRkA
kgkarbMEbksm<nkUv:aLg; ehIykayCaeGLicRtugesrI. kgenaHeGLicRtug KWsMedAeTAelI
eGLicRtugNamYyEdlEckecjCaTMrg;bnHnwgehIyvagaynwgTTYlrgnUvEdnGKisnI dUcCakarbegIteLIg
edayRbPBtg;sg bkbU:tg;EslepSgeTot. mCdanxageRkA Gacrab;bBalTaMgfamBlBnW Edl
CaTMrgn Photons nigfamBlkMedABImCdanCuMvij. enAkgsItuNPaBbnb;Fmta intrinsic Silicon 1
10
Cm man free Carriers RbEhlCa 1>5 x 10 . cMeBaH intrinsic KWsMedAeTAelIrUbFatuBak;kNal
cMlgNaEdleKcMr:aj;y:agRbugRbytedIm,Ikat;bnysarFatuminsuT[mankMritTab CaBiessKWCasar
FatusuTEdlGaccMr:aj;eTA)antamlTPaBrbs;beckviTa.
eGLicRtugesrIkgrUbFatuEdlbNalmkEtBImUlehtuBIxageRkAehAfa Intrinsic Carriess.
tarag1>1xageRkameRbobeFobcMnYnn Intrinsic Carriess Edlmankg 1 Cm n Ge, Si nig GaAs.
kgenaHrUbFatu Ge man Intrinsic Carriess eRcInCageK ehIyrUbFatu GaAs man Intrinsic Carriess
ticCageKEdl Ge manelIs GaAs BIrdg. cMnYn Carriess kgTMrg; Intrinsic KWmansarsMxan;
bu:EnmanlkNepSgeTotEdlsMxan;CagenH edIm,IkMNt;rUbFatukgkareRbIR)as;rbs;vaCak;Esg. kta
mYykgktaTaMgenH KW Relative Mobility ( ) Edl Carriess esrIkgrUbFatuEdlCasmtPaBrbs;
Carriess esrIkg pas;brTICuMvijrUbFatu. tarag 1>2 bgajy:agc,as; Carriess esrIkg GaAs man
bMlas;TIelOnCag Carriess esrIkg Si R)aMdg ehtuenHeTIbeRKOgeGLicRtUnicEdleFVIBI GaAs dMeNIr
karelOnCageRKOgeGLicRtUnicEdleFVIBI Si 5dg. kgenaHpgEdl eRKOgEdleFIV Ge elOnCageRKOg
EdleFVIBI Si BIdg ehtuenHeTIbeKenAEteRbI Ge sRmab;pliteRKOgeGLicRtUnickgbrikareGLicRtUnic
EdlmaneRbkg;viTel,nelOn.
tarag 1>1 Intrinsic Carriess
tarag 1>2 Relative Mobility Factor
3
rUbFatuBak;kNalcMlg cMnYn Carriers/Cm rUbFatuBak;kNalcMlg cMnYn (Cm /vs)
3
GaAs
Si
Ge
1.7 x 106
1.5x 1010
2.5x 1013
Electronic Circuit Theory &Electronic Lab
Si
Ge
GaAs
-5-
1500
3900
8500
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
bcb,nenHeKGaccMr:aj;rUbFatuBak;kNalcMlg)ansuTledayeRbIR)as;beckviTafI. bBaa
enHKWKanplvi)akkgkarcMr:aj; Si dUcmunenaHeT minEtbu:eNaHmanPaBgayRsYlkg karcMr:aj;Cati Ge
EdlsuTeTAtamtMrUvkar EdlkgenaHman1PaK10ekadsMrab;rUbFatuminsuTlkNenHGac[eyIgdwg fa
kareFVI[rUbFatuEdlmanPaBcMlgticERbkayeTACarUbFatuEdlmanPaBcMlgx<s;mankMrity:agx<s; bMput.
smtPaBnkarpas;brcritlkNnrUbFatuEdldMeNIrkarenHehAfa {doping}
EdlCadMeNIr
karmYyeFVI[eKTTYl)an Germanium Silicon. Gallium Arsenide )any:agRsYl.
bBaamYyeTotEdlsMxan; ehIyEdlKYr[cab;GarmN_rvagrUbFatuBak;kNalcMlg nigrUbFatu cMlg
KWRbtikmrbs;vaeTAnigkareRbIR)as;kMedA.
sMrab;rUbFatucMlg
ersuIsg;rbs;vamankarekIneLIg
RbsinebIkMedAekIneLIgEdrenaH. bBaaenHedaysarcMnYnn Carriess rbs;rUbFatucMlgminmankarekIn
eLIgCamYykMedA bu:EnBYkvamanrMjr ehIysitenATItaMgnwgEdleFVI[vamankMenInBi)aksMrab;lMhUr Carriess
qgkat;rUbFatu. rUbFatuenHehAfa man Coefficient sItuNPaBviCman. cMeBaHrUbFatuBak;
kNalcMlgvijrwtEtcMlglenAeBlEdlvaekA. enAeBlsItuNPaBekIneLIg cMnYnneGLicRtugv:aLg;
ekIneLIgedayRsUbykfamBlkMedA[RKb;RKan;edIm,IbMEbksm<nkUv:aLg;
ehIyedIm,Ie)aHbg;[cMnYn
Carriess esrIekIneLIg. dUcenH rUbFatuBak;kNalcMlgman Coefficient sItuNPaBGviCman.
4> Extrinsic Materials: rUbFatuBak;kNalcMlgRbePT n nig p
edayehtuEt Si CarUbFatuEdleRbIR)as;jwkjab; CarUbFatumUldankgkarbegIt]bkrN_eGLic
RtUnic Solid-State kgenaHmankarCab;Tak;TgEteTAnwg Si bu:eNaH. minEtbu:eNaH Ge, Si, GaAs k
mansm<nkUv:aLg;RbECgKaEdr.
critlkNrbs;rbU FatuBak;kNalcMlgGacpas;br sMxan;eTAtamkarbEnmGatUmnFatumin
suTCakMNt;NamYyeTAelIrUbFatusuTEdleyIgeRbIR)as;. karminbnSTTaMgenHGacbEnmRtwmEt1PaK
10lan EdlGaceFVI[pas;brbgMTMrg;GatUmkgkarbMErbMrYllkNGKisnIrbs;rUbFatu.
rUbFatuBak;kNalcMlgEdlRtUv)aneKdak;[mandMeNIrkar doping kgkarcMr:aj;eFVIva RtUv)an
eKehAfaCa Extrinsic Material.
manrUbFatu Extrinsic BIrRbePTEdlmansarsMxan;minGacvas;sg;)ansMrab;karbegIteRKOg
eGLicRtUnicenaHKW rUbFatuBak;kNalcMlgRbePT n nigrUbFatuBak;kNalcMlgRbePT p.
Electronic Circuit Theory &Electronic Lab
-6-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
4>1 rUbFatuBak;kNalcMlgRbePT n
TaMgrUbFatuRbePT p nigrUbFatuRbePT n
RtUv)anbegIteLIgedaykarbEnmGatUmnFatuminsuT
EdlmancMnYnkMNt;eTAelIGatUm Silicon EdlCa
rUbFatumUldan. rUbFatuBak;kNalcMlgRbePT n
begIteLIgedaykarbBalFatuminsuTEdlmaneGLic
Rtugv:aLg;cMnYn5 (Pentavalent) dUcCa Antimony ,
i lrbs;Fatu
Arsenic ehIynig Phosphovus. \TB
minsuTTaMgenHeTAelIFatubnSTb gajdUcrUb 1>6
xageRkam.
kgenaHenAEtmanvtmansm<nkUv:aLg;4dEdl.
rUb 1>6 FatuminsuT Sb kgRbePT n
eTaHCay:agNakenHCakarbEnmeGLicRtug5nFatuminsuTEdlbBal[eTACacMENknsm<n
kUv:aLg;NamYy. kareFVI[dUcenHeFVI[maneGLicRtugenAsl;EdlminenACab;CamYysm<nkUv:aLg;rbs; Sb
nig Si enaHeT vakayeTACaeGLicRtugesrIedaybegItCarUbFatuBak;kNalcMlgRbePT n fImYy.
dUcenHkarbBalGatUmnFatuminsuTeTAelIGatUmnrUbFatubnSTeFVI[vae)aHbg;eGLicRtugesrInTMrg;
GatUmEdlmanv:aLg;eGLicRtug5. GatUmEdlmanv:aLg;eGLicRtugenHehAfa {donor atoms}.
vaBitCasMxan;Nas;edIm,IeCOCak;fa ebIeTaHcMnYndeRcInn Carriess esrIRtUv)anbegIteLIgkg
rUbFatuBak;kNalcMlgRbePT
y:agNakedaykvaenAEtmanlkNGKisnINWt
n
enAeBlEdlcMnYnRbUtugEdlmanbnkviCmankgnuyekGUlenAEtesIeTAnigcMnYnneGLicRtugesrI
nigeGLicRtugEdlman bnkGviCmanEdlenACuMvijnuyekGUlkgTMrg;GatUmenaHdEdl.
enAkgsItuNPaBbnb;Fmta kgrUbFatu Intrinsic Silicon RbEhlCamaneGLicRtugesrImYy
enAerogral;GatUmcMnYn1012GatUm. RbsinebIkMritmaRtdan1kg10lan107 enaHGaRtarbs;vaKW
1012107=105 EdlbBaak;[eXIjfa karRbmUlpM Carriers ekIneLIgedayGaRta 100>000: 1.
4>2 rUbFatuBak;kNalcMlgRbePT P
rUbFatuBak;kNalcMlgRbePT P ekItmaneLIgedaykarykGatUmnFatubnSMT dUcCa Germanics
bk Si eTAbBalCamYyGatUmnFatuminsuTEdlmaneGLicRtugv:aLg;3. rUbFatuEdleK eFVIjwkjab; KWman
Boron, Gallium nig Indium. rUbxageRkambgajBIkarbBalGatUmnrUbFatu Boron eTAelI Silicon.
Electronic Circuit Theory &Electronic Lab
-7-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
\lUvenHKWminmancMnYneGLicRtugRKb;RKan;edIm,IbMeB
jsm<nkUv:aLg;nbnHrUbFatuEdl)an begItfIenaHeT.
lTplEdleFVI[enH eFVI[mankEngTMenr KaneGLicRtug
ehAfa
{Hole}
EdlCaTUeTAtagedaysBaabUk
bkrgVg;mUltUcEdlbBaak;BIGvtmannbnkGviCman dUcenH
kEngEdlehAsl; TMenrR)akdCaTTYlykeGLicRtugesrI
ehIyFatuEdlGatUmmaneGLicRtugv:aLg;3 ehIyTTYlyk
eGLicRtugesrI ehAfa {Acceptor Atoms}.
eTaHCay:agenHkIkrUbFatuBak;kNalcMlgRbePT P
rUb 1>7 rUbFatu B kgrUbFatu P
enAEtmanlkNGKisnINWtdEdl drab NacMnYnn {Hole}
nigcMnYneGLicRtugEdlenACuMvji nuyekGUlesInwgcMnYnRbUtugenaH.
4>3 lMhUeGLicRtug nig Hole
RbsinebIeGLicRtugv:a
Lg;TTYl)annUvfamBlclna
RKb;RKan;edIm,IbMEbksm<nkUv:aL
g;rbs;va edIm,IbMEbkkEng
EdlenATMenrbegIteLIg eday
{Hole} enaH kEngEdlenATMenr
behAfa {Hole} nig
RtUv)anbegItsm<nkUv:aLg;nUveG
LicRtugv:aLg;Edlcakecj
rUb 1>8 lMhUeGLicRtug nig Hole
enH.
dUcenHkgrUbmankarbBan {Hole} enAxageqVg ehIykarbBaleGLicRtugeTAsaM.
4>4 Majority nig Minority Carriers
Electronic Circuit Theory &Electronic Lab
-8-
Lecturer: SAREN SEREIVATHA
viTasanCatiBhubeckeTskm<Ca
mhaviTalyeGLicRtUnik
kgsanPaBCarUbFatu Intrinsic cMnnY neGLicRtugesrIkg Ge bkCa Si KWCaeGLicRtugtictYc
kgrbuMv:aLg;EdlTTYlfamBlRKb;RKan;BIRbPBkMedA bBnWedIm,Ipac;xnecjBIsm<nk Uv:aLg; bkeKFatu
minbnSTtictYcEdllayCamYyedayminGaceFVI[suTl)an. cenaHEdlenATMenrecjBITMrg;sm<nkUv:a
Lg;enHeFVI[manRbPBn {Hole} eLIgy:agtictYcbMput.
kgrUbFatuBak;kNalcMlgRbePT n cMnnY {Hole} KWmin)anpas;brecjBIrUbFatuEdlCa Intrinsic
enaHeT KWenAEtmandEdl. bBaaTaMgenHeFVI[cMnYneGLicRtugeRcInelIslb; nigcMnYn {Hole}
tictYcmanenAkgrUbFatuBak;kNalcMlgRbePT n enH. EdlkgenaHkgrUbFatuRbePT n eGLicRtugeK
ehAfa Majority Carriers ehIy {Hole} eKehAfa Minority Carriers.
edaykareFVI[rUbFatumin)ansuTlenaH ehIyEdleFVI[rUbFatuBak;kNalcMlgRbePT P man
{Hole} eRcInelIslb; ehIyeGLicRtugtictYc. EdlkgenaHkgrUbFatuBak;kNalcMlgRbePT P {Hole}
ehAfaCa Majority Carriers ehIyeGLicRtugehAfaCa Majority Carriers.
Minority Carrier
(Electrons)
rUb 1>9 : Majority nig Minority Carriess
enAeBlEdleGLicRtugTI5nGatUm
cakecjBIGatUmedImrbs;vaGatUmEdlenAsl;
Donor
TTYlbNajbnkviCmanEdltagedaysBaabUkkugvg;RkckCaGIyug Donor. kgenaHpgEdr GatUm
EdlTTYlykeGLicRtugBIeKmkbMeBjkEngTMenrrbs;xn tagedaysBaadkEdlCaGIyug Acceptor.
Electronic Circuit Theory &Electronic Lab
-9-
Lecturer: SAREN SEREIVATHA
