MBR10150CT

10 Amp High Voltage

Features
High Junction Temperature Capability
Good Trade Off Between Leakage Current
And Forward Volage Drop
Low Leakage Current
MCC
Catalog
Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MBR 10150 CT 150V 105V 150 V
Electrical Characteristics @ 25C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
10 A T
C
= 155C
Peak Forward Surge
Current
I
FSM
120A 8.3ms half sine
Maximum
Instantaneous
Forward Voltage
MBR10150CT

V
F
.92 V











I
FM
= 5A
TJ = 25C
























INCHES MM
DlM MlN MAX MlN MAX NOTE
A .600 .620 15.25 15.75
B .393 .409 10.00 10.40
N 0.102t y p. 2.6 t yp .
DlMENSlONS
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H

150Volts
TO-220AB
PIN
1 3
Maximum Ratings
Operating Junction Temperature : 150C
Storage Temperature: - 50C to +150C
Per d iode Thermal Resistance 4C/W Junction to Case
Micro Commercial Components
21201 Itasca Street Chatsworth
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
C .104 .116 2.65 2.95
D .244 .259 6.20 6.60
E .356 .361 9.05 9.15
F .137 .154 3.50 3.93
G .511 .551 13.00 14.00
H .094 .106 2.40 2.70
I .024 .034 0.61 0.88
J .019 .027 0.49 0.70
K .147 .151 3.75 3.85
L .173 .181 4.40 4.60
M .048 .051 1.23 1.32
Total Thermal Resistance 2.4C/W Junction to Case
Barrier Rectifier
Power Schottky
Maximum
Reverse Current At
Rated DC Blocking
Voltage
I
R
50 A T
J
= 25C
7m A T
J
= 125C
V
F
.75V I
FM
= 5A
T
J
= 125C

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MBR10150CT
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
Tamb(C)
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15C/W
T
=tp/T tp
Fig. 2: Average forward current versus ambient
temperature ( = 0.5, per diode).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=50C
Tc=75C
Tc=125C
IM
t
=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(A)
Tj=75C
Tj=25C
Tj=125C
Tj=150C
Tj=175C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1 2 5 10 20 50 100 200
10
20
50
100
200
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
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MBR10150CT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125C
Tj=25C
Tj=125C
Typical values
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
0 2 4 6 8 10 12 14 16 18 20
0
10
20
30
40
50
60
70
80
S(cm)
Rth(j-a) (C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35m)
(STPS10150CG only).
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