Si4814DY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY
VDS (V)
Channel 1 Channel-1 30 Channel 2 Channel-2

FEATURES
rDS(on) (W)
0.021 @ VGS = 10 V 0.0325 @ VGS = 4.5 V 0.020 @ VGS = 10 V 0.0265 @ VGS = 4.5 V

ID (A)
7.0 5.6 7.4 6.4

D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout Options D 100% Rg Tested

APPLICATIONS
D DC/DC Converters Notebook
D1

SCHOTTKY PRODUCT SUMMARY

VDS (V)
30

VSD (V) Diode Forward Voltage

0.50 V @ 1.0 A

IF (A)
2.0

SO-8
D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4814DY Si4814DY-T1 (with Tape and Reel) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2

G1 N-Channel 1 MOSFET S1/D2

G2 N-Channel 2 MOSFET S2

Schottky Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Channel-1 Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Channel-2 10 secs
30 20

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

10 secs

Steady State

Steady State

Unit
V

7.0 5.6 40 1.7 1.9 1.2

5.5 4.3 1.0 1.1 0.71 55 to 150

7.4 6 40 1.8 2.0 1.3

5.7 4.5 0.95 1.16 0.74 W _C A

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Channel-1 Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 71685 S-32124Rev. E, 27-Oct-03 www.vishay.com t v 10 sec Steady-State Steady-State

Channel-2 Typ
47 85 28

Symbol
RthJA RthJF

Typ
52 90 30

Max
65 112 38

Max
60 107 35

Unit
_C/W

Si4814DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) GS( h) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, V VGS = 20 V VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State ID(on) D( ) VDS = 5 V, V VGS = 10 V VGS = 10 V, ID = 7.0 A Drain Source On-State Drain-Source On State Resistanceb rDS(on) DS( ) VGS = 10 V, ID = 7.4 A VGS = 4.5 V, ID = 5.6 A VGS = 4.5 V, ID = 6.4 A Forward Transconductanceb Diode Forward Voltageb gfs f VSD VDS = 15 V, ID = 7.0 A VDS = 15 V, ID = 7.4 A IS = 1.7 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.0175 0.0165 0.027 0.022 17 20 0.7 0.47 1.1 0.5 0.021 0.020 0.0325 0.0265 S V W 0.8 0.8 100 100 1 100 15 2000 A mA V nA

Symbol

Test Condition

Min

Typa

Max

Unit

Dynamica
Total Gate Charge Gate Source Charge Gate-Source Gate Drain Charge Gate-Drain Gate Resistance Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source Drain Reverse Recovery Time Source-Drain Qg Qgs Qgd d Rg td(on) d( ) tr td(off) d( ff) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel 2 Channel-2 VDD = 1 15 V V, RL = 1 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-1 Channel-1 VDS = 15 V, VGS = 5 V, ID = 7.0 A Channel 2 Channel-2 VDS = 15 1 V, V VGS = 5 V V, ID = 7.4 A Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.5 6.5 9.7 1.5 2.6 2.7 3.8 1.6 1.8 12 13 13 13 22 29 8 12 50 46 2.6 3.1 20 20 20 20 35 45 15 20 80 80 ns W 10 15 nC

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter
Forward Voltage Drop

Symbol
VF

Test Condition
IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = 30 V, TJ = 125_C Vr = 10 V

Min

Typ
0.47 0.36 0.004 0.7 3.0 50

Max
0.50 0.42 0.100 10 20

Unit
V

Maximum Reverse Leakage Current Junction Capacitance www.vishay.com

Irm CT

mA pF

Document Number: 71685 S-32124Rev. E, 27-Oct-03

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 5 V 40

CHANNEL-1
Transfer Characteristics

32 I D Drain Current (A) 4V 24 I D Drain Current (A)

32

24

16 3V 8

16 TC = 125_C 8 25_C 55_C 2 3 4 5

0 0 2 4 6 8 10 VDS Drain-to-Source Voltage (V)

0 0 1 VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.05 750 Ciss

Capacitance

DS(on) On-Resistance ( W )

VGS = 4.5 V 0.03 VGS = 10 V

C Capacitance (pF)

0.04

600

450

0.02

300 Crss

Coss

0.01

150

0.00 0 8 16 24 32 40 ID Drain Current (A)

0 0 6 12 18 24 30 VDS Drain-to-Source Voltage (V)

Gate Charge
5 V GS Gate-to-Source Voltage (V) VDS = 15 V ID = 7 A 4 1.8 1.6 1.4 1.2 1.0 0.8 0.6 50

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 7 A

0 0.0

1.5

3.0

4.5

6.0

7.5

r DS(on) On-Resistance (W ) (Normalized)

25

25

50

75

100

125

150

Qg Total Gate Charge (nC) Document Number: 71685 S-32124Rev. E, 27-Oct-03

TJ Junction Temperature (_C) www.vishay.com

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.10

CHANNEL-1
On-Resistance vs. Gate-to-Source Voltage

TJ = 150_C 10 TJ = 25_C

DS(on) On-Resistance ( W )

0.08

I S Source Current (A)

0.06

0.04 ID = 7 A 0.02

1 0.0

0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)

Threshold Voltage
120 0.4 100 V GS(th) Variance (V) 0.2 0.0 0.2 0.4 0.6 0.8 50 ID = 250 mA Power (W) 80 60 40 20

Single Pulse Power, Junction-to-Ambient

0 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ Temperature (_C)

100

Safe Operating Area

rDS(on) Limited IDM Limited

10 I D Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS Drain-to-Source Voltage (V) 1s 10 s dc

www.vishay.com

Document Number: 71685 S-32124Rev. E, 27-Oct-03

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient

CHANNEL-1

2 1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

Notes: PDM t1

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 90_C/W

t1 t2

Single Pulse 0.01 104 103 102 1 Square Wave Pulse Duration (sec) 101 10

3. TJM TA = PDMZthJA(t) 4. Surface Mounted

100

600

2 1

Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 104 103 102 101 Square Wave Pulse Duration (sec) 1 10

Document Number: 71685 S-32124Rev. E, 27-Oct-03

www.vishay.com

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40

CHANNEL-2
40

Output Characteristics
VGS = 10 thru 4 V

Transfer Characteristics

32 I D Drain Current (A) I D Drain Current (A)

32

24

24

16

3V

16 TC = 125_C 8 25_C 55_C

0 0 2 4 6 8 10 VDS Drain-to-Source Voltage (V)

0 0 1 2 3 4 5 VGS Gate-to-Source Voltage (V)

0.05

On-Resistance vs. Drain Current

1500

Capacitance

r DS(on) On-Resistance ( W )

0.04 C Capacitance (pF)

1200 Ciss

0.03 VGS = 4.5 V 0.02 VGS = 10 V

900

600

Coss

0.01

300

Crss

0.00 0 8 16 24 32 40 ID Drain Current (A)

0 0 6 12 18 24 30 VDS Drain-to-Source Voltage (V)

5 V GS Gate-to-Source Voltage (V) VDS = 15 V ID = 7.4 A

Gate Charge

1.8 1.6 1.4 1.2 1.0 0.8 0.6 50

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 7.4 A

0 0 2 4 6 8 10 Qg Total Gate Charge (nC)

r DS(on) On-Resistance (W ) (Normalized)

25

25

50

75

100

125

150

TJ Junction Temperature (_C)

www.vishay.com

Document Number: 71685 S-32124Rev. E, 27-Oct-03

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.10

CHANNEL-2
On-Resistance vs. Gate-to-Source Voltage

TJ = 150_C 10

DS(on) On-Resistance ( W )

0.08

I S Source Current (A)

0.06

TJ = 25_C

0.04 ID = 7.4 A 0.02

1 0.0

0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)

Reverse Current vs. Junction Temperature

10 1 11 12 13 120 100 80 60 40 20

Single Pulse Power, Junction-to-Ambient

I R Reverse Current (mA)

30 V 24 V

14 15

Power (W)

0 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 100 1 10 TJ Temperature (_C)

Safe Operating Area

rDS(on) Limited IDM Limited

10 I D Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS Drain-to-Source Voltage (V) 1s 10 s dc

Document Number: 71685 S-32124Rev. E, 27-Oct-03

www.vishay.com

Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02

CHANNEL-2

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes: PDM t1

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 85_C/W 3. TJM TA = PDMZthJA(t) 4. Surface Mounted

t1 t2

Single Pulse 0.01 104 103 102 101 1

10

100

600

Square Wave Pulse Duration (sec)

2 1

Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

0.01 104

Single Pulse 103 102 101 Square Wave Pulse Duration (sec) 1 10

www.vishay.com

Document Number: 71685 S-32124Rev. E, 27-Oct-03