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固电半导体 Inchange Semicondutor: Silicon NPN Power Transistors

This document provides the product specification for Inchange Semiconductor's 2SD2059 silicon NPN power transistor. Key details include: - It has a TO-220F package and is intended for general purpose applications with low collector saturation voltage of 2.0V max. - Absolute maximum ratings include collector-emitter voltage of 100V and collector current of 5A. - Typical characteristics are a current gain of 70-140 and transition frequency of 240MHz. - The document outlines specifications, package dimensions, and characteristic curves for collector current, gain, and safe operating area.

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12 views

固电半导体 Inchange Semicondutor: Silicon NPN Power Transistors

This document provides the product specification for Inchange Semiconductor's 2SD2059 silicon NPN power transistor. Key details include: - It has a TO-220F package and is intended for general purpose applications with low collector saturation voltage of 2.0V max. - Absolute maximum ratings include collector-emitter voltage of 100V and collector current of 5A. - Typical characteristics are a current gain of 70-140 and transition frequency of 240MHz. - The document outlines specifications, package dimensions, and characteristic curves for collector current, gain, and safe operating area.

Uploaded by

jsalinas78
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2059

DESCRIPTION With TO-220F package Complement to type 2SB1367 Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A Collector power dissipation: PC=30W(TC=25) APPLICATIONS With general purpose applications
PINNING PIN 1 2 3 Base Collector DESCRIPTION

I
J
BCE

Absolute maximum ratings (Ta=25)


SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER

R O T U D N O C I EM S E G N A INCH
Emitter CONDITIONS VALUE 100 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open base 100 5 5 0.5 30 150 -55~150 Open collector

Fig.1 simplified outline (TO-220F) and symbol

UNIT V V V A A W

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=100V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 40 20 12 100 MIN 100 TYP

2SD2059

MAX

UNIT V

2.0 1.5 0.1 1.0 240

V V mA mA

MHz pF

hFE-1 Classifications R 40-80 O

U D N O C I EM S E G N A INCH
Y 70-140 120-240

TOR

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SD2059

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R O T U D N O C I EM S E G N A INCH
Fig.2 Outline dimensions

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors


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2SD2059
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Fi).3 Static Characteriitlc 900

COIUCTOR CURRENT Ic (A)


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R O T U D N ULL O C I EM S E G N A AUHIENT TEIIFGRATDBB Ta CC) INCH


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190

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100

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OOUECTOft-EianES VOLTGE Ves 00


Fiy.7 Safe Operating Ai ea

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