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Ir2117 Igbt Driver PDF

This document provides specifications and operating information for the IR2117(S)/IR2118(S) single channel power MOSFET and IGBT driver. The driver can operate at voltages up to 600V, has propagation delays below 125ns, and features undervoltage lockout protection and transient tolerant high side floating operation. Electrical characteristics including input/output voltage thresholds, current limits, and switching times are provided over operating temperature and voltage conditions.

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0% found this document useful (0 votes)
432 views18 pages

Ir2117 Igbt Driver PDF

This document provides specifications and operating information for the IR2117(S)/IR2118(S) single channel power MOSFET and IGBT driver. The driver can operate at voltages up to 600V, has propagation delays below 125ns, and features undervoltage lockout protection and transient tolerant high side floating operation. Electrical characteristics including input/output voltage thresholds, current limits, and switching times are provided over operating temperature and voltage conditions.

Uploaded by

ismifaizul
Copyright
© Attribution Non-Commercial (BY-NC)
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Download as PDF, TXT or read online on Scribd
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Data Sheet No.

PD60146 Rev O

IR2117(S)/IR2118(S) & (PbF)


SINGLE CHANNEL DRIVER
Features

Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout CMOS Schmitt-triggered inputs with pull-down Output in phase with input (IR2117) or out of phase with input (IR2118) Also available LEAD-FREE

Product Summary
VOFFSET IO+/VOUT ton/off (typ.) 600V max. 200 mA / 420 mA 10 - 20V 125 & 105 ns

Description
The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.

Packages

8-Lead PDIP IR2117/IR2118

8-Lead SOIC IR2117S/IR2118S

Typical Connection
up to 600V

VCC IN

VCC IN COM

VB HO VS
TO LOAD

IR2117
up to 600V

VCC IN

VCC IN COM

VB HO VS
TO LOAD

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

IR2118

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IR2117(S)/IR2118(S) & (PbF)


Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.

Symbol
VB VS VHO VCC VIN dVs/dt PD RthJA TJ TS TL

Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Logic supply voltage Logic input voltage Allowable offset supply voltage transient (figure 2) Package power dissipation @ TA +25C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 lead PDIP) (8 lead SOIC) (8 lead PDIP) (8 lead SOIC)

Min.
-0.3 VB - 25 VS - 0.3 -0.3 -0.3 -55

Max.
625 VB + 0.3 VB + 0.3 25 VCC + 0.3 50 1.0 0.625 125 200 150 150 300

Units

V/ns W C/W

Recommended Operating Conditions


The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Symbol
VB VS VHO VCC VIN TA

Definition
High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Logic supply voltage Logic input voltage Ambient temperature

Min.
VS + 10 Note 1 VS 10 0 -40

Max.
VS + 20 600 VB 20 VCC 125

Units

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).

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IR2117(S)/IR2118(S) & (PbF)


Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

Symbol
ton toff tr tf

Definition
Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time

Min. Typ. Max. Units Test Conditions


125 105 80 40 200 180 130 65 ns VS = 0V VS = 600V

Static Electrical Characteristics


VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol
VIH VIL VOH VOL ILK IQBS IQCC IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+

Definition
input voltage - logic 1 (IR2117) logic 0 (IR2118) Input voltage - logic 0 (IR2117) logic 1 (IR2118) High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC Supply Current Logic 1 input bias current Logic 0 input bias current (IR2117) (IR2118) (IR2117) (IR2118) VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current

Min. Typ. Max. Units Test Conditions


9.5 7.6 7.2 7.6 7.2 200 50 70 20 8.6 8.2 8.6 8.2 250 6.0 100 100 50 240 340 40 1.0 9.6 9.2 9.6 9.2 VO = 0V VIN = Logic 1 PW 10 s VO = 15V VIN = Logic 0 PW 10 s V A V mV IO = 0A IO = 0A VB = VS = 600V VIN = 0V or VCC VIN = 0V or VCC VIN = VCC VIN = 0V VIN = 0V VIN = VCC

IO-

Output low short circuit pulsed current

420

500

mA

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IR2117(S)/IR2118(S) & (PbF)


Functional Block Diagram (IR2117)

VCC UV DETECT
HV LEVEL SHIFT

VB R R S Q HO

PULSE FILTER

IN PULSE GEN UV DETECT VS

COM

Functional Block Diagram (IR2118)


VCC UV DETECT
HV LEVEL SHIFT

VB R Q R S VS HO

PULSE FILTER

IN

PULSE GEN

UV DETECT

COM

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IR2117(S)/IR2118(S) & (PbF)


Lead Definitions
Symbol
VCC IN IN COM VB HO VS

Description
Logic and gate drive supply Logic input for gate driver output (HO), in phase with HO (IR2117) Logic input for gate driver output (HO), out of phase with HO (IR2118) Logic ground High side floating supply High side gate drive output High side floating supply return

Lead Assignments

1 2 3 4

VCC IN COM

VB HO VS

8
7 6 5

1 2 3 4

VCC IN COM

VB HO VS

8
7 6 5

8 Lead PDIP

8 Lead SOIC

IR2117

IR2117S

1 2 3 4

VCC IN COM

VB HO VS

8
7 6 5

1 2 3 4

VCC IN COM

VB HO VS

8
7 6 5

8 Lead PDIP

8 Lead SOIC

IR2118

IR2118S

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IR2117(S)/IR2118(S) & (PbF)

IN
(IR2118)

IN
(IR2117)

<50 V/ns

IR2117/IR2118

HO

Figure 1. Input/Output Timing Diagram

Figure 2. Floating Supply Voltage Transient Test Circuit

IN
(IR2118)
50% 50%

50%

50%

IN
(IR2117)

ton

tr
90%

toff
90%

tf

IR2117/IR2118

HO

10%

10%

Figure 3. Switching Time Test Circuit

Figure 4. Switching Time Waveform Definition

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IR2117(S)/IR2118(S) & (PbF)


500

500 Turn-on Delay Time (ns) 400 300


M ax.

Turn-on Delay Time (ns)

400 300 200 100


Typ.

M ax.

200
Typ.

100 0

0 -50

-25

25

50
o

75

100

125

10

12

14

16

18

20

Temperature ( C) Figure 4A. Turn-On Tim e vs. Tem perature

V BIAS Supply Voltage (V) Figure 4B. Turn-On Time vs. Supply Voltage

500 Turn-Off Time (ns) Turn-Off Time (ns) 400 300 200
M ax.

500 400 300


M ax.

200
Typ.

100
Typ.

100 0

0 -50

-25

25

50

75

100

125

10

12

14

16

18

20

Temperature (oC) Figure 5A. Turn-Off Tim e vs. Tem perature

V BIAS Supply Voltage (V) Figure 5B. Turn-Off Time vs. Supply Voltage

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IR2117(S)/IR2118(S) & (PbF)


500 Turn-On Rise Time (ns) 400 300 200 100
M ax.

500 Turn-On Rise Time (ns) 400 300 200 100


Typ. M ax.

0 -50

Typ.

-25

25

50
o

75

100

125

10

12

14

16

18

20

Temperature ( C) Fiure 6A. Turn-On Rise Time vs.Temperature

V BIAS Supply Voltage (V) Figure 6B. Turn-On Rise Time vs. Supply Voltage

250 Turn-Off Fall Time (ns) 200 150 100 50


M ax.

250 Turn-Off Fall Time (ns) 200 150 100 50


Typ. M ax.

0 -50

Typ.

0 -25 0 25 50
o

75

100

125

10

12

14

16

18

20

Temperature ( C)
Figure 7A. Turn-Off Fall Tim e vs. Tem perature

V BIAS Supply Voltage (V) Figure 7B. Turn-Off Fall Tim e vs. Supply Voltage

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IR2117(S)/IR2118(S) & (PbF)


13 12 11 10 9
Mi n.

18 Input Voltage (V) 15 12 9 6


Mi n.

Input Voltage (V)

8 -50

3 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature ( oC) V cc Supply Voltage (V) Figure 8B. Logic "1" (IR2118 "0") Input Voltage vs. Supply Voltage

Figure 8A. Logic "1" (IR2118 "0") Input Voltage vs. Tem perature

9 Input Voltage (V) 8 7


M ax.

15 12 9 6 3 0

6 5 4 -50

Input Voltage (V)

M ax.

-25

25

50
o

75

100

125

10

12

14

16

18

20

Temperatre ( C) Figure 9A. Logic "0" (IR2118 "1") Input Voltage vs. Tem perature

V cc Supply Voltage (V) Figure 9B. Logic "0" (IR2118 "1") Input Voltage vs. Supply Voltage

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IR2117(S)/IR2118(S) & (PbF)


0.5 0.4 0.3 0.2 0.1
M ax.

High Level Output Voltage (V)

High Level Output Voltage (V)

0.5 0.4 0.3 0.2 0.1 0 10 12 14 16 18 20 V cc Supply Voltage (V) Figure 10B. High Level Output vs. Supply Voltage
M ax.

0.0 -50

-25

25

50
o

75

100

125

Temperature ( C) Figure 10A. High Level Output vs. Temperature

Low Level Output Voltage (V)

Low Level Output Voltage (V)

0.5 0.4 0.3 0.2 0.1


M ax.

0.5 0.4 0.3 0.2 0.1 0 10 12 14 16 18 20 V cc Supply Voltage (V) Figure 11B. Low Level Output vs. Supply Voltage
MAX.

0 -50

-25

25

50

75

100

125

Temperature (oC) Figure 11A. Low Level Output vs.Temperature

10

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IR2117(S)/IR2118(S) & (PbF)


Offset Supply Leakage Current ( A)

400 300 200 100


M ax.

Offset Supply Leakage Current ( A)

500

500 400 300 200 100 0 0 100 200 300 400 500 600 VB Boost Voltage (V)
Figure 12B. Offset Supply Leakage Current vs. V B Boost Voltage
M ax.

0 -50

-25

25

50
o

75

100

125

Temperature ( C) Figure 12A. Offset Supply Leakage Current vs. Temperature

1000 ) V Supply Current ( 800 600 400


M ax.

1000 ) V Supply Current ( 800 600 400 200 0 -25 0 25 50


o M ax.

200
Typ.

Typ.

0 -50

75

100

125

10

12

14

16

18

20

Temperature ( C) Figure 13A. V BS Supply Current vs. Tem perature

V BS Supply Voltage (V) Figure 13B. V BS Supply Current vs. Supply Voltage

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IR2117(S)/IR2118(S) & (PbF)


1000 V cc Supply Current ( A) V cc Supply Current ( 800 600 400 200
Typ. M ax.

1000 ) 800 600 400


M ax.

200
Typ.

0 -50

0 -25 0 25 50
o

75

100

125

10

12

14

16

18

20

Temperature ( C) Figure 14A. V cc Supply Current vs. Tem perature

V cc Supply Voltage (V)


Figure 14B. V cc Supply Current vs . Supply Voltage

120 )

120 ) Logic "1" Input Current ( 100 80 60


M ax.

Logic "1" Input Current (

100 80 60 40 20 0 -50
M ax.

40
Typ.

Typ.

20 0 10 12 14 16 18 20 V cc Supply Voltage (V) Figure 15B. Logic "1" (2118 "0") Input Current vs. Supply Voltage

-25

25

50
o

75

100

125

Temperature ( C) Figure 15A. Logic "1" (2118 "0") Input Current vs. Temperature

12

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IR2117(S)/IR2118(S) & (PbF)


5 4 3 2 1
M ax.

Logic "0" Input Current (

Logic "0" Input Current ( -25 0 25 50


o

) 75 100 125

5 4 3 2
M ax.

1 0 10 12 14 16 18 20 V cc Supply Voltage (V) Figure 16B. Logic "0" (2118"1") Input Current vs. Supply Voltage

0 -50

Temperature ( C) Figure 16A. Logic "0" (2118"1") Input Current vs. Temperature

16 ) V cc Supply Current (
V cc Supply Current (

16 ) 14 12 10 8 6 -50
M ax

14 12 10 8
Mi n.

M ax.
Typ.

Typ.

Mi n.

6 -50

-25

25

50

75

100

125

-25

25

50 (oC)

75

100

125

Temperature (oC)
Figure 17A. V cc Undervoltage Threshold (+) vs. Temperature

Temperature

Figure 18A. V cc Undervoltage Threshold (-) vs. Tem perature

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IR2117(S)/IR2118(S) & (PbF)


16 ) V BS Supply Current ( V Supply Current ( 14 12 10 8
Mi n. M ax. Typ.

16 ) 14 12 10 8 6 -50
M ax.

Typ.

6 -50

Mi n.

-25

25

50
o

75

100

125

-25

25

50
o

75

100

125

Temperature ( C) Figure 19A. V BS Undervoltage Threshold (+) vs. Tem perature

Temperature ( C) Figure 20A. V BS Undervoltage Threshold (-) vs. Tem perature

Output Source Current (mA)

400 300 200 100 0 -50


Typ.

Output Source Current (mA)

500

500 400 300 200 100


Mi n.

Mi n.

Typ.

0 10 12 14 16 18 20 V BIAS Supply Voltage (V)


Figure 21B. Output Source Curre nt vs . Supply Voltage

-25

25

50
o

75

100

125

Temperature ( C) Figure 21A. Output Source Current vs. Tem perature

14

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IR2117(S)/IR2118(S) & (PbF)


1000 Output Sink Current ( ) Output Sink Current ( ) 800 600 400 200 0 -50
Typ.

1000 800 600 400 200 0 -25 0 25 50 75 100 125 10 12 14 16 18 20 Temperature (oC) Figure 22A. Output Sink Current vs.Temperature V BIAS Supply Voltage (V) Figure 22B. Output Sink Current vs. Supply Voltage
Typ.

Mi n.

Mi n.

vs Offset Supply Voltage (V)

0 -2
Typ.

-4 -6 -8 -10 -12 10 12 14 16 18 20 V BS Floting Supply Voltage (V) Figure 23B. Maximum VS Negative Offset vs. Supply Voltage

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IR2117(S)/IR2118(S) & (PbF)

150

320V 140V

150

320V

140V

125 Junction Temperature (C) Junction Temperature (C)

125

100

100
10V

75
10V

75

50

50

25

25

0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6

0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6

Figure 24. IR2117/IR2118 TJ vs. Frequency (IRFBC20) RGATE = 33, VCC = 15V

Figure 25. IR2117/IR2118 TJ vs. Frequency (IRFBC30) RGATE = 22, VCC = 15V

150

320V 140V

10V

150

320V 140V 10V

125 Junction Temperature (C) Junction Temperature (C) 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6

125

100

100

75

75

50

50

25

25

0 1E+2

0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6

Figure 26. IR2117/IR2118 TJ vs. Frequency (IRFBC40) RGATE = 15, VCC = 15V

Figure 27. IR2117/IR2118 TJ vs. Frequency (IRFPE50) RGATE = 10, VCC = 15V

16

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IR2117(S)/IR2118(S) & (PbF)


Case outlines

8-Lead PDIP
D A 5 B
FOOTPRINT 8X 0.72 [.028]

01-6014 01-3003 01 (MS-001AB)


DIM A b c D INC HES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00

A1 .0040

6 E

5 H 0.25 [.010] A

E
6.46 [.255]

e e1 H K L
8X 1.78 [.070]

.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8

1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8

6X

e e1

3X 1.27 [.050]

A C 0.10 [.004] y

K x 45

8X b 0.25 [.010]
NOTES:

A1 C A B

8X L 7

8X c

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.

5 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENG TH OF LEAD FOR SOLDERING TO A SUBSTRATE.

01-6027

8-Lead SOIC
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IR2117(S)/IR2118(S) & (PbF)

LEADFREE PART MARKING INFORMATION


Part number

IRxxxxxx YWW? ?XXXX


Lot Code (Prod mode - 4 digit SPN code) IR logo

Date code

Pin 1 Identifier ? P MARKING CODE Lead Free Released Non-Lead Free Released

Assembly site code Per SCOP 200-002

ORDER INFORMATION
Basic Part (Non-Lead Free) 8-Lead PDIP IR2117 order IR2117 8-Lead PDIP IR2118 order IR2118 8-Lead SOIC IR2117S order IR2117S 8-Lead SOIC IR2118S order IR2118S Leadfree Part 8-Lead PDIP IR2117 order IR2117PbF 8-Lead PDIP IR2118 order IR2118PbF 8-Lead SOIC IR2117S order IR2117SPbF 8-Lead SOIC IR2118S order IR2118SPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This product has been qualified per industrial level Data and specifications subject to change without notice. 5/14/2007

18

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