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Technical Data: NPN Low Power Silicon Transistor

This document provides technical specifications for NPN low power silicon transistor devices qualified under military standards. It includes maximum ratings for voltage, current and power, as well as operating temperature ranges. Electrical characteristics such as breakdown voltages, current gains, saturation voltages and switching times are specified. Thermal resistance from junction to case is also listed.

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Janko Jaridic
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29 views2 pages

Technical Data: NPN Low Power Silicon Transistor

This document provides technical specifications for NPN low power silicon transistor devices qualified under military standards. It includes maximum ratings for voltage, current and power, as well as operating temperature ranges. Electrical characteristics such as breakdown voltages, current gains, saturation voltages and switching times are specified. Thermal resistance from junction to case is also listed.

Uploaded by

Janko Jaridic
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR


Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV

MAXIMUM RATINGS Ratings


Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 ) Collector Current Total Power Dissipation @ T A = +250C (1) @ T C = +250C (2)

Symbol
VCEO VCBO VEBO VCER IC

All Devices
80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 -65 to +200 2N720A 2N1893, S

Units
Vdc Vdc Vdc Vdc mAdc

TO-18 (TO-206AA)* 2N720A

PT T J, T srg Symbol
0

W
0

Operating & Storage Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
0

Unit
0

97 58 RJC 0 1) Derate linearly 2.86 mW/ C for 2N720A, 4.57 mW/ C for 2N1893, S T A > 25 C 2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S T C > 250C

C/W

TO-5* 2N1893, 2N1893S

*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)


Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Collector-Base Cutoff Current VCB = 120 Vdc VCB = 90 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc V(BR)CEO V(BR)CER ICBO 80 100 10 10 10 10 Vdc Vdc Adc Adc Adc Adc

IEBO

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101 Page 1 of 2

2N720A; 2N1893; 2N1893S JAN SERIES

ELECTRICAL CHARACTERISTICS (cont)


Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc hFE 20 35 40

120 5.0 1.3 Vdc Vdc

VCE(sat) VBE(sat)

DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio VCE =5.0 Vdc, IC = 1.0 mAdc VCE =10 Vdc, IC = 5.0 mAdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance VCB = 10 Vdc, IC = 5.0 mAdc Small-Signal Short-Circuit Output Admittance VCB = 10 Vdc, IC = 5.0 mAdc Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe 3.0 hfe hib hob Cobo 2 35 45 4.0 10

100 8.0 0.5 15 PF

SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time (See Figure 3 of MIL-PRF-19500/182) (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
t

on + toff

30

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101 Page 2 of 2

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