PD - 91270J

IRF7509
HEXFET Power MOSFET
q q q q q q q

Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching

S1 G1 S2 G2

N-C HANNE L M O S F E T 1 8

D1 D1 D2 D2

N-Ch

P-Ch

VDSS

30V

-30V

P -C HANNE L M O S F E T

T op V ie w

RDS(on) 0.11 0.20

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

M icro 8

Absolute Maximum Ratings

Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 30 2.7 2.1 21

Max.
P-Channel -30 -2.0 -1.6 -16

Units
V A W W mW/C V V V/ns C

1.25 0.8 10 20 30 5.0 -55 to + 150 240 (1.6mm from case)

Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient

Max.
100

Units
C/W

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IRF7509
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 1.9 0.92 Typ. Max. 0.059 -0.039 0.09 0.110 0.14 0.175 0.17 0.20 0.30 0.40 1.0 -1.0 25 -25 100 7.8 12 7.5 11 1.2 1.8 1.3 1.9 2.5 3.8 2.5 3.7 4.7 9.7 10 12 12 19 5.3 9.3 210 180 80 87 32 42 Units V V/C Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 1.7A VGS = 4.5V, ID = 0.85A VGS = -10V, ID =-1.2A VGS = -4.5V, ID =-0.6A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 10V, ID = 0.85A VDS = -10V, ID = -0.6A VDS = 24 V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24 V, VGS = 0V, TJ = 125C VDS = -24V, VGS = 0V, TJ = 125C VGS = 20V N-Channel ID = 1.7A, VDS = 24V, VGS = 10V nC P-Channel ID = -1.2A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, ID = 1.7A, RG = 6.1, RD = 8.7 ns P-Channel VDD = -15V, ID = -1.2A, RG = 6.2, RD = 12 N-Channel VGS = 0V, VDS = 25V, = 1.0MHz P-Channel VGS = 0V, VDS = -25V, = 1.0MHz

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

V S

I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf C iss C oss C rss

Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

pF

Source-Drain Ratings and Characteristics

Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 1.25 -1.25 A 21 -16 1.2 TJ = 25C, IS = 1.7A, VGS = 0V V -1.2 TJ = 25C, IS = -1.8A, VGS = 0V 40 60 N-Channel ns 30 45 TJ = 25C, IF = 1.7A, di/dt = 100A/s 48 72 P-Channel nC TJ = 25C, IF = -1.2A, di/dt = -100A/s 37 55

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 21 )

Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec.

N-Channel ISD 1.7A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C

P-Channel ISD -1.2A, di/dt 160A/s, VDD V(BR)DSS, TJ 150C

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N - Channel
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP

IRF7509
100

I D , Drain-to-S ource C urrent (A )

I D , D rain-to-S ou rce C u rrent (A )

VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP

10

10

3.0V
1

3.0V

0.1 0.1 1

20 s P U LS E W ID TH TJ = 25C A
10

0.1 0.1 1

20 s P U LS E W ID TH TJ = 150C A
10

V D S , D rain-to-Sourc e Voltage (V )

V D S, D rain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics

100

Fig 2. Typical Output Characteristics

100

I D , D rain-to-S o urc e C urrent (A )

T J = 2 5 C
10

I S D , R evers e D rain C urrent (A )

10

T J = 1 5 0 C

TJ = 150C T J = 25C

0.1 3.0 3.5 4.0 4.5

V DS = 10V 2 0 s P U L S E W ID T H
5.0 5.5 6.0

0.1 0.4 0.8 1.2 1.6

VG S = 0V

2.0

V G S , G a te -to -S o u rce V o lta g e (V )

V S D , S ource-to-D rain Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode Forward Voltage

0.220

2.0

R D S(on) , Drain-to-S ource O n Resistance (N orm alized)

I D = 1.7A

1.5

R DS (on) , Drain-to-Source On Resistance

0.180

VGS = 4.5V
0.140

1.0

0.5

0.100

VGS = 10V

0.0 -60 -40 -20 0 20 40 60 80 100

V G S = 10V
120 140

160

0.060 0 2 4 6 8 10

T J , J unc tion T em pe rature (C )

I D , Drain Current (A)

Fig 5. Normalized On-Resistance Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain Current

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IRF7509
N - Channel
0.140

100

R DS (on), Drain-to-Source On Resistance

OPERATION IN THIS AREA LIMITED BY RDS(on)

0.120

I D , Drain Current (A)

10

10us

ID = 2.7A
0.100

100us

1ms

0.080

10ms

0.060 0 4 8 12 16

0.1 1

TC = 25 C TJ = 150 C Single Pulse

10 100

VGS , Gate-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate Voltage

400

Fig 8. Maximum Safe Operating Area

V G S , G ate-to-S ourc e V oltage (V )

V GS = C iss = C rss = C oss =

0V , f = 1M H z C gs + C gd , C ds S H O R T E D C gd C ds + C gd

20

I D = 1.7A V D S = 24V V D S = 15V

16

C , C a p a c ita n c e (p F )

300

C iss C oss

12

200

100

C rss

0 1 10 100

0 0 2 4 6

FO R TE S T C IR C U IT S E E FIG U R E 9
8 10 12

V D S , D rain-to-S ourc e V oltage (V )

Q G , Total G ate C harge (nC )

Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage

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IRF7509
P - Channel
10
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

10

-I D , D rain-to-S ourc e C urren t (A )

-I D , D rain-to-S ourc e C urrent (A )

VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

-3.0V

-3.0 V

0.1 0.1 1

20 s P U LS E W ID TH TJ = 25 C A
10

0.1 0.1 1

20s P U LS E W ID TH TJ = 150C A
10

-V D S , D rain-to-S ourc e V oltage (V )

-V D S , D rain-to-S ource Voltage (V )

Fig 11. Typical Output Characteristics

10

Fig 12. Typical Output Characteristics

10

-I D , D rain-to -S o urce C urre nt (A )

TJ = 2 5C TJ = 1 5 0 C

-I S D , R everse D rain C urrent (A )

TJ = 150C TJ = 25C

0.1 3.0 4.0 5.0

V D S = -1 0 V 2 0 s P U L S E W ID T H
6.0 7.0

0.1

VG S = 0V
0.4 0.6 0.8 1.0 1.2

1.4

-VG S , G a te -to -S ou rce V olta ge (V )

-VS D , Sourc e-to-D rain Voltage (V )

Fig 13. Typical Transfer Characteristics

2.0

Fig 14. Typical Source-Drain Diode Forward Voltage

1.5

R D S (on) , D rain-to-S ourc e O n R esistance (N orm alized)

1.5

RDS(on) , Drain-to-Source On Resistance ( )

I D = -1.2A

1.0

VGS = -4.5V

1.0

0.5

0.5

0.0 -60 -40 -20 0 20 40 60 80

VG S = -10V

VGS = -10V
0.0 0 1 2 3 4

100 120 140 160

T J , J unc tion T em perature (C )

-I

, , Drain Current (A)

Fig 15. Normalized On-Resistance Vs. Temperature

Fig 16. Typical On-Resistance Vs. Drain Current

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IRF7509
P - Channel
RDS(on) , Drain-to-Source On Resistance ( )
0.60

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

0.50

-I ID , Drain Current (A)

10

10us

0.40

= -2.0A

100us

0.30

1ms

0.20

10ms

0.10 3 6 9 12 15

0.1 1

TC = 25 C TJ = 150 C Single Pulse

10 100

-V

/5

, Gate-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 17. Typical On-Resistance Vs. Gate Voltage

400

Fig 18. Maximum Safe Operating Area

20

-V G S , G a te-to -S ou rc e V o lta g e (V )

V GS = C is s = C rs s = C os s =

0V, f = 1M H z C gs + C gd , Cd s S H O R TE D C gd C ds + C gd

I D = -1 .2A V DS = -2 4V V DS = -1 5V

16

C , C a pac itanc e (pF )

300

C is s C oss
200

12

100

C rs s

0 1 10 100

0 0 2 4 6

F O R T E S T C IR C U IT S E E FIG U R E 9
8 10 12

-V D S , D rain-to-S ourc e V oltage (V )

Q G , Total G ate C harge (nC )

Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage

N-P - Channel
1000

Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage

Thermal Response (Z thJA )

100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 P DM t1 t2

0.1 0.00001

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7509
Package Outline
Micro8 Outline Dimensions are shown in millimeters (inches)
LE AD A S S IG N M EN T S D -B3 D D D D 8 7 6 5 3 E -A1 2 3 4 S S S G S1 G 1 S2 G 2 8 7 6 5 H 0.25 (.010) M A M S IN G LE 1 2 3 4 D U AL 1 2 3 4 D 1 D1 D 2 D 2 8 7 6 5
D IM IN C H ES M IN M AX M ILLIM E TE R S M IN MAX

A A1 B C D e e1 E H L

.0 36 .0 04 .0 10 .005 .116

.0 44 .0 08 .0 14 .0 07 .1 20

0 .9 1 0 .1 0 0 .2 5 0 .13 2 .95

1 .11 0 .20 0 .36 0.18 3.05

.0 256 B A SIC .0 128 B A SIC .1 16 .188 .0 16 0 .1 20 .1 98 .026 6

0 .65 BA S IC 0 .33 BA S IC 2.9 5 4 .78 0 .4 1 0 3 .0 5 5.03 0 .66 6

e 6X e1 A -C B 8X 0.08 (.003) M A1 C A S B S 0.10 (.004) L 8X C 8X

R E C O M M E ND E D FO O T P RIN T 1.04 ( .041 ) 8X 0.38 8X ( .015 )

3.20 ( .126 )

4.24 5.28 ( .167 ) ( .208 )

NO TES : 1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .

0.65 6X ( .0256 )

Part Marking Information

Micro8

E X AM PLE : T H IS IS A N IR F 7501

A D A T E C O D E (YW W ) Y = LA S T D IG IT O F YE A R W W = W EE K

451 7501
PART NUMBER

TO P

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IRF7509
Tape & Reel Information
Micro8 Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1

12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 )

8 .1 ( .31 8 ) 7 .9 ( .31 2 )

F E E D D IR E C T IO N

N O TE S : 1 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -54 1 . 2 . C O N T R O L L IN G D IM E N SIO N : M IL L IM ET E R .

33 0.00 (1 2 .9 9 2 ) M AX.

1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98

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