09 N 05
09 N 05
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
55 0.1 9.2
V A
Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Q67040-S4130-A2 Tube
Unit A
ID
TC = 25 C TC = 100 C
Pulsed drain current
TC = 25 C
Avalanche energy, single pulse mJ
TC = 25 C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
06.99
SPD 09N05
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 6.25 100 75 50 K/W Unit
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.093 0.1 V Unit
55 2.1
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 10 A
Zero gate voltage drain current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 6.5 A
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
06.99
SPD 09N05
Electrical Characteristics , at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Dynamic Characteristics Transconductance typ. 4.5 215 75 45 15 max. 270 95 60 25
Unit
3 -
S pF
VDS2*ID*RDS(on)max , ID = 6.5 A
Input capacitance
tr
20
30
td(off)
30
45
tf
25
40
Data Sheet
06.99
SPD 09N05
Electrical Characteristics , at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 1.3 3.5 7 5.9 max. 2 5.25 11 V nC Unit
VDD = 40 V, ID = 9.2 A
Gate to drain charge
VDD = 40 V, ID = 9.2 A
Gate charge total
VDD = 40 V, ID = 9.2 A
IS I SM VSD t rr Q rr
1.05 50 0.085
TC = 25 C
Inverse diode direct current,pulsed
TC = 25 C
Inverse diode forward voltage V ns C
VGS = 0 V, I F = 18.5 A
Reverse recovery time
Data Sheet
06.99
SPD 09N05
Power Dissipation
Drain current
Ptot = f (TC)
SPD09N05
ID = f (TC )
parameter: VGS 10 V
SPD09N05
26
W
11
A
22 9 20 18 8 7 6 5 4 3 6 4 2 0 0 20 40 60 80 100 120 140 160 C 190 2 1 0 0 20 40 60 80 100 120 140 160 C 190
Ptot
14 12 10 8
TC
ID
16
TC
I D = f (V DS)
parameter : D = 0 , T C = 25 C
10 2
SPD09N05
ZthJC = f (tp )
parameter : D = tp /T
10 1
tp = 2.5s
SPD09N05
K/W
10 0
D
DS
(o
n)
100 s
Z thJC
10 -1 D = 0.50 0.20
ID
10
DS
10 1
/I
10 s
1 ms
10 ms
DC
10 -1 -1 10
10
10
10
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
VDS
tp
Data Sheet
06.99
SPD 09N05
I D = f (VDS)
parameter: tp = 80 s
SPD09N05
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: V GS
SPD09N05
24
A
Ptot = 24W
0.32
c
VGS [V] a
b
20 18
4.0 4.5
k j i
16
ID
14 12 10 8 6
e g
h e
f g h
RDS(on)
5.0
0.24
0.20
0.16
j k l
f i
j k l
0.12
4
c
2 0 0.0
a
1.0
2.0
3.0
4.0
5.5
VDS
0.00 0
10
12
14
16 A
19
ID
20
15
gfs
3 10 2 5 1 0 0
V
ID
10
0 0
10
12
14
16
20
VGS
ID
Data Sheet
06.99
SPD 09N05
Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 6.5 A, VGS = 10 V
SPD09N05
VGS(th) = f (Tj)
parameter : VGS = V DS, ID = 10 A
5.0 V 4.4
0.34
0.28
4.0
VGS(th)
RDS(on)
0.24 0.20
0.16
98% typ
0.12 0.08
0.04
min
0.00 -60
-20
20
60
100
140
200
200
Tj
Tj
IF = f (VSD )
parameter: Tj , tp = 80 s
10 2
SPD09N05
A pF
Ciss C
10 1
10 2
Coss
IF
10 0
Crss
10 1 0
10
15
20
25
30
V VDS
40
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
VSD
Data Sheet
06.99
SPD 09N05
VGS = f (QGate )
parameter: ID puls = 9.2 A
SPD09N05
16
V
12
30
25
VGS
EAS
20
15
10
0 20
40
60
80
100
120
140
180
0 0
Tj
11 nC Q Gate
V(BR)DSS = f (Tj)
SPD09N05
66
V
64
V(BR)DSS
62 60
58
56 54
52
50 -60
-20
20
60
100
140
200
Tj
Data Sheet
06.99
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