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09 N 05

This document provides specifications for an N-channel enhancement mode power transistor. Key specifications include: - Drain-source voltage of 55V - Drain-source on-resistance of 0.1 ohms - Continuous drain current of 9.2A - Operating temperature range of -55°C to 175°C - Packaging options of P-TO252 or P-TO251 in tape and reel or tube formats.

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Mauro Marafon
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© Attribution Non-Commercial (BY-NC)
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Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
195 views

09 N 05

This document provides specifications for an N-channel enhancement mode power transistor. Key specifications include: - Drain-source voltage of 55V - Drain-source on-resistance of 0.1 ohms - Continuous drain current of 9.2A - Operating temperature range of -55°C to 175°C - Packaging options of P-TO252 or P-TO251 in tape and reel or tube formats.

Uploaded by

Mauro Marafon
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 9

SPD 09N05

SIPMOS Power Transistor


Features N channel

Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current

VDS RDS(on) ID

55 0.1 9.2

V A

Enhancement mode

Avalanche rated dv/dt rated 175C operating temperature

Type SPD09N05 SPU09N05

Package P-TO252 P-TO251

Ordering Code Q67040-S4136

Packaging Tape and Reel

Pin 1 G

Pin 2 D

Pin 3 S

Q67040-S4130-A2 Tube

MaximumRatings , at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current

Value 9.2 6.5 37 35 2.4 6 20 24 -55... +175 55/175/56

Unit A

ID

TC = 25 C TC = 100 C
Pulsed drain current

IDpulse EAS EAR


dv/dt

TC = 25 C
Avalanche energy, single pulse mJ

ID = 9.2 A, VDD = 25 V, RGS = 25


Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s V W C

IS = 9.2 A, VDS = 40 V, di/dt = 200 A/s Gate source voltage


Power dissipation

VGS Ptot Tj , Tstg

TC = 25 C
Operating and storage temperature IEC climatic category; DIN IEC 68-1

Data Sheet

06.99

SPD 09N05

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 6.25 100 75 50 K/W Unit

RthJC RthJA RthJA

Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.093 0.1 V Unit

V(BR)DSS VGS(th) IDSS

55 2.1

VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS

ID = 10 A
Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 150 C


Gate-source leakage current

IGSS RDS(on)

VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance

VGS = 10 V, ID = 6.5 A

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.

Data Sheet

06.99

SPD 09N05

Electrical Characteristics , at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Dynamic Characteristics Transconductance typ. 4.5 215 75 45 15 max. 270 95 60 25

Unit

g fs Ciss Coss Crss td(on)

3 -

S pF

VDS2*ID*RDS(on)max , ID = 6.5 A
Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz


Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz


Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz


Turn-on delay time ns

VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50


Rise time

tr

20

30

VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50


Turn-off delay time

td(off)

30

45

VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50


Fall time

tf

25

40

VDD = 30 V, VGS = 10 V, ID = 9.2 A, RG = 50

Data Sheet

06.99

SPD 09N05

Electrical Characteristics , at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 1.3 3.5 7 5.9 max. 2 5.25 11 V nC Unit

Qgs Qgd Qg V(plateau)

VDD = 40 V, ID = 9.2 A
Gate to drain charge

VDD = 40 V, ID = 9.2 A
Gate charge total

VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V


Gate plateau voltage

VDD = 40 V, ID = 9.2 A

Reverse Diode Inverse diode continuous forward current

IS I SM VSD t rr Q rr

1.05 50 0.085

9.2 37 1.8 75 0.13

TC = 25 C
Inverse diode direct current,pulsed

TC = 25 C
Inverse diode forward voltage V ns C

VGS = 0 V, I F = 18.5 A
Reverse recovery time

VR = 30 V, IF=IS , diF/dt = 100 A/s


Reverse recovery charge

VR = 30 V, IF=l S , diF/dt = 100 A/s

Data Sheet

06.99

SPD 09N05

Power Dissipation

Drain current

Ptot = f (TC)
SPD09N05

ID = f (TC )
parameter: VGS 10 V
SPD09N05

26
W

11
A

22 9 20 18 8 7 6 5 4 3 6 4 2 0 0 20 40 60 80 100 120 140 160 C 190 2 1 0 0 20 40 60 80 100 120 140 160 C 190

Ptot

14 12 10 8

TC

ID

16

TC

Safe operating area

Transient thermal impedance

I D = f (V DS)
parameter : D = 0 , T C = 25 C
10 2
SPD09N05

ZthJC = f (tp )
parameter : D = tp /T
10 1
tp = 2.5s

SPD09N05

K/W

10 0
D

DS

(o

n)

100 s

Z thJC
10 -1 D = 0.50 0.20

ID

10

DS

10 1

/I

10 s

1 ms

0.10 10 -2 single pulse 0.05 0.02 0.01

10 ms

DC

10 -1 -1 10

10

10

10

10 -3 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10

VDS

tp

Data Sheet

06.99

SPD 09N05

Typ. output characteristics

I D = f (VDS)
parameter: tp = 80 s
SPD09N05

Typ. drain-source-on-resistance

RDS(on) = f (ID)
parameter: V GS
SPD09N05

24
A

Ptot = 24W

0.32
c
VGS [V] a
b

20 18

4.0 4.5

k j i

16

5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0

ID

14 12 10 8 6
e g

h e
f g h

RDS(on)

5.0

0.24

0.20

0.16
j k l

f i
j k l

0.12

0.08 0.04 VGS [V] =


c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0

4
c

2 0 0.0
a

1.0

2.0

3.0

4.0

5.5

VDS

0.00 0

10

12

14

16 A

19

ID

Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max


30

Typ. forward transconductance

gfs = f(ID ); Tj = 25C


parameter: gfs
6

20

15

gfs
3 10 2 5 1 0 0
V

ID

10

0 0

10

12

14

16

20

VGS

ID

Data Sheet

06.99

SPD 09N05

Drain-source on-resistance

Gate threshold voltage

RDS(on) = f (Tj)
parameter : ID = 6.5 A, VGS = 10 V
SPD09N05

VGS(th) = f (Tj)
parameter : VGS = V DS, ID = 10 A
5.0 V 4.4

0.34

0.28

4.0

VGS(th)

RDS(on)

3.6 3.2 2.8 2.4


max

0.24 0.20

0.16

98% typ
0.12 0.08

2.0 1.6 1.2 0.8


typ

0.04

0.4 0.0 -60 -20 20 60 100 140


C

min

0.00 -60

-20

20

60

100

140

200

200

Tj

Tj

Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz


10 3

Forward characteristics of reverse diode

IF = f (VSD )
parameter: Tj , tp = 80 s
10 2
SPD09N05

A pF

Ciss C

10 1

10 2
Coss

IF
10 0
Crss

Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)

10 1 0

10

15

20

25

30

V VDS

40

10 -1 0.0

0.4

0.8

1.2

1.6

2.0

2.4

3.0

VSD

Data Sheet

06.99

SPD 09N05

Avalanche Energy EAS = f (Tj) parameter: ID = 9.2 A, VDD = 25 V RGS = 25


40
mJ

Typ. gate charge

VGS = f (QGate )
parameter: ID puls = 9.2 A
SPD09N05

16

V
12

30

25

VGS

EAS

10 0,2 VDS max 8 0,8 VDS max

20

15

10

0 20

40

60

80

100

120

140

180

0 0

Tj

11 nC Q Gate

Drain-source breakdown voltage

V(BR)DSS = f (Tj)
SPD09N05

66

V
64

V(BR)DSS

62 60

58

56 54

52

50 -60

-20

20

60

100

140

200

Tj

Data Sheet

06.99

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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