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2sa 765

This document provides specifications for the 2SA765 silicon PNP power transistor from Inchange Semiconductor. It includes maximum ratings for voltage, current, power and temperature. The transistor has a TO-66 package and is designed for general purpose power amplifier applications. Key characteristics are listed, such as a collector-emitter saturation voltage below 1.5V, DC current gain of 50, and transition frequency of 10MHz. Dimensional details of the TO-66 package are also provided.

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63 views

2sa 765

This document provides specifications for the 2SA765 silicon PNP power transistor from Inchange Semiconductor. It includes maximum ratings for voltage, current, power and temperature. The transistor has a TO-66 package and is designed for general purpose power amplifier applications. Key characteristics are listed, such as a collector-emitter saturation voltage below 1.5V, DC current gain of 50, and transition frequency of 10MHz. Dimensional details of the TO-66 package are also provided.

Uploaded by

adirsom
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA765

DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION

Absolute maximum ratings(Ta=)


SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -6 -6 40 150 -55~150 UNIT V V V A W

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

2SA765

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-10mA ;IB=0

-80

V(BR)CBO

Collector-base breakdown voltage

IC=-1mA ;IE=0

-80

VCEsat

Collector-emitter saturation voltage

IC=-4A; IB=-0.4A

-1.5

VBEsat

Base-emitter saturation voltage

IC=-4A; IB=-0.4A

-2.0

ICBO

Collector cut-off current

VCB=-80V; IE=0

-10

IEBO

Emitter cut-off current

VEB=-6V; IC=0

-10

hFE

DC current gain

IC=-1A ; VCE=-4V

50

fT

Transition frequency

IC=-0.5A ; VCE=-12V

10

MHz

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors


PACKAGE OUTLINE

2SA765

Fig.2 outline dimensions

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