... for Solar EnergySystemsISE have succeeded in producing high-quality indium phosphide on gallium arsenide substrates (InP-on-GaAs wafers) with up to 150 mm diameter.
Fraunhofer ISE researchers say their newly fabricated gallium arsenide substrates (InP-on-GaAs wafers) can replace prime indium phosphide wafers and offer a scalable pathway to lower costs.