Memory Products
C-RAM – Chalcogenide
Random Access Memory
General description
The 512K x 8 radiation-hardened C-RAM is a high-performance 524,288 bit x 8-bit random-access non-volatile memory with industry-standard functionality. It is fabricated with BAE Systems’ radiation-hardened technology and is designed for use in systems operating in radiation environments. The C-RAM operates over the full military temperature range and requires a single 3.3 V ±10% power supply. The C-RAM is available with CMOS-compatible I/O. Software data protection is implemented using the JEDEC-optional standard algorithm. Power consumption typically is less than 20 mW/MHz in operation. The C-RAM read operation is fully asynchronous, with an associated typical read access time of less than 70 nanoseconds and write access time of less than 500 nanoseconds.
BAE Systems’ enhanced bulk CMOS technology is radiation-hardened through use of advanced and proprietary design, layout, and process-hardening techniques. Chalcogenide OUMTM technology licensed from Ovonyx Inc. OUM is a trademark of Ovonyx Inc.
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