TY  - JOUR
SN  - 0146-9592
VL  - 45
N2  - A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with >0.3nm of tuning suitable for atom cooling experiments with the D2 87Rb atomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems.
AV  - public
Y1  - 2020/07/01/
JF  - Optics Letters
UR  - https://eprints.gla.ac.uk/217855/
ID  - enlighten217855
A1  - Di Gaetano, E.
A1  - Watson, S.
A1  - McBrearty, E.
A1  - Sorel, M.
A1  - Paul, D.J.
PB  - Optical Society of America
TI  - Sub-MHz linewidth 780.24 nm distributed feedback laser for ??Rb applications
SP  - 3529
EP  - 3532
IS  - 13
ER  -