Abstract

The transfer printing of aluminum gallium arsenide (AlGaAs) microdisk resonators onto a silicon-on-insulator (SOI) waveguide platform is demonstrated. The integrated resonators exhibit loaded ${Q}$-factors reaching $ 4 \times {10^4} $, and the vertical assembly approach allows selective coupling to different spatial mode families. The hybrid platform’s nonlinearity is characterized by four-wave mixing with a measured nonlinear coefficient of $ \gamma = 325\;{({\rm Wm})^{ - 1}} $, with the devices demonstrating minimal two-photon absorption and free-carrier absorption losses that are inherent to SOI at telecommunications wavelengths.

© 2020 Optical Society of America

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