Abstract
We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
Masahiko Kondow, Kazuhisa Uomi, Atsuko Niwa, Takeshi Kitatani, Seiji Watahiki and Yoshiaki Yazawa
Copyright (c) 1996 The Japan Society of Applied Physics
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Citation Masahiko Kondow et al 1996 Jpn. J. Appl. Phys. 35 1273DOI 10.1143/JJAP.35.1273
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We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.