GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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Copyright (c) 1996 The Japan Society of Applied Physics
, , Citation Masahiko Kondow et al 1996 Jpn. J. Appl. Phys. 35 1273DOI 10.1143/JJAP.35.1273

1347-4065/35/2S/1273

Abstract

We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

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10.1143/JJAP.35.1273