本文介绍了一种利用超长镓氮(GaN)线的压电特性设计的高灵活性应变传感器。通过将Langmuir-Blodgett组装的GaN线封装在介电材料（parylene-C）中，形成电容结构，优化了压电输出潜力。根据有限元模拟，这种设计可以最大化传感器的压电响应。实际制造的宏观柔性应变传感器（活性区域：1.5cm²）在三点配置下能承受小于10cm的曲率，并展现出30mV/N的典型力敏感度。
摘要：
We report a highly flexible strain sensor which exploits the piezoelectric properties of ultra-long gallium nitride (GaN) wires. Langmuir-Blodgett assembled wires are encapsulated in a dielectric material (parylene-C), which is sandwiched between two planar electrodes in a capacitor-like configuration. Through FEM simulations we show that encapsulating densely aligned conical wires in a properly designed dielectric layer can maximize the amplitude of the generated piezoelectric output potential. According to these considerations we designed and fabricated macroscopic flexible strain sensors (active area: 1.5 cm(2)). The sensor was actuated in three point configuration inducing curvature radii of less than 10 cm and has a typical force sensitivity of 30 mV N(-1).
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