SiR165DP

[Link]
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D • TrenchFET® Gen III p-channel power MOSFET
D 8
D 7 • Industry leadership RDS(on) specifications
D 6 (as of November 2017)
5
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
6. 1
15 2 S [Link]/doc?99912
m
m
5 mm 3 S
1 5.1 4 S APPLICATIONS S
G
Top View Bottom View • Adapter and charger switch
PRODUCT SUMMARY • Load switch G
VDS (V) -30 • Motor drive control
RDS(on) max. () at VGS = -10 V 0.0046 • DC/DC converter
RDS(on) max. () at VGS = -4.5 V 0.0075
• Power supplies
Qg typ. (nC) 44 D
ID (A) -60 a, g • Battery management
Configuration Single P-Channel MOSFET

ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free and halogen-free SiR165DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30
V
Gate-source voltage VGS ± 20
TC = 25 °C -60 a
TC = 70 °C -60 a
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C -25.9 b, c
TA = 70 °C -20.7 b, c
A
Pulsed drain current (t = 100 μs) IDM -120
TC = 25 °C -54.8
Continuous source-drain diode current IS
TA = 25 °C -4.2 b, c
Single pulse avalanche current IAS -20
L = 0.1 mH
Single pulse avalanche energy EAS 20 mJ
TC = 25 °C 65.8
TC = 70 °C 42.1
Maximum power dissipation PD W
TA = 25 °C 5.1 b, c
TA = 70 °C 3.2 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) c 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t  10 s RthJA 20 25
°C/W
Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile ([Link]/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 65 °C/W
g. TC = 25 °C

S18-0208-Rev. A, 19-Feb-18 1 Document Number: 75969

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 SiR165DP
[Link]
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - V
VDS temperature coefficient VDS/TJ ID = -10 mA - -24 -
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 4.3 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1 - -2.3 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA
VDS = -30 V, VGS = 0 V - - -1
Zero gate voltage drain current IDSS μA
VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15
On-state drain current a ID(on) VDS  -10 V, VGS = -10 V -30 - - A
VGS = -10 V, ID = -15 A - 0.0038 0.0046
Drain-source on-state resistance a RDS(on) 
VGS = -4.5 V, ID = -10 A - 0.0062 0.0075
Forward transconductance a gfs VDS = -15 V, ID = -20 A - 62 - S
Dynamic b
Input capacitance Ciss - 4930 -
Output capacitance Coss VDS = -15 V, VGS = 0 V, f = 1 MHz - 575 - pF
Reverse transfer capacitance Crss - 516 -
VDS = -15 V, VGS = -10 V, ID = -25.9 A - 92 138
Total gate charge Qg
- 44 66
nC
Gate-source charge Qgs VDS = -15 V, VGS = -4.5 V, ID = -25.9 A - 12 -
Gate-drain charge Qgd - 14 -
Gate resistance Rg f = 1 MHz 0.32 1.6 3.2 
Turn-on delay time td(on) - 20 40
Rise time tr VDD = -15 V, RL = 0.73 , ID  -20.7 A, - 25 50
Turn-off delay time td(off) VGEN = -10 V, Rg = 1  - 45 70
Fall time tf - 18 36
ns
Turn-on delay time td(on) - 25 50
Rise time tr VDD = -15 V, RL = 0.73 , ID  -20.7 A, - 30 60
Turn-off delay time td(off) VGEN = -4.5 V, Rg = 1  - 45 70
Fall time tf - 22 44
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - -54.8
A
Pulse diode forward current ISM - - -120
Body diode voltage VSD IS = -5 A, VGS = 0 V - -0.73 -1.2 V
Body diode reverse recovery time trr - 40 80 ns
Body diode reverse recovery charge Qrr IF = -20.7 A, di/dt = 100 A/μs, - 45 90 nC
Reverse recovery fall time ta TJ = 25 °C - 19.5 -
ns
Reverse recovery rise time tb - 20.5 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S18-0208-Rev. A, 19-Feb-18 2 Document Number: 75969

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 SiR165DP
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

120 10000 120 10000
TC = 25 °C
VGS = 10 V thru 4 V

90 90 TC = 125 °C

ID - Drain Current (A)

ID - Drain Current (A)

1000 1000

2nd line
2nd line

2nd line
1st line

1st line
2nd line

60 60
VGS = 3 V
100 100
30 30 TC = -55 °C

0 10 0 10
0 0.5 1 1.5 2 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title Axis Title

0.012 10000 7000 10000

Ciss
RDS(on) - On-Resistance (Ω)

5600
0.009
C - Capacitance (pF)

1000 1000
VGS =4.5 V 4200
2nd line

2nd line
2nd line
2nd line

1st line

1st line
0.006
VGS = 10 V 2800
100 100
0.003
1400 Coss

Crss
0 10 0 10
0 30 60 90 120 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
2nd line 2nd line

On-Resistance vs. Drain Current and Gate Voltage Capacitance

Axis Title Axis Title

10 10000 1.6 10000
ID = 25.9 A VDS = 8 V
RDS(on) - On-Resistance (Normalized)

VGS = 10 V, ID = 15 A
VGS - Gate-to-Source Voltage (V)

8 1.4

1000 1000
6 VDS = 15 V 1.2
2nd line

2nd line
1st line

1st line
2nd line

2nd line

VGS = 4.5 V, 10 A
VDS = 24 V
4 1.0
100 100

2 0.8

0 10 0.6 10
0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
2nd line 2nd line

Gate Charge On-Resistance vs. Junction Temperature

S18-0208-Rev. A, 19-Feb-18 3 Document Number: 75969

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 SiR165DP
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

100 10000 1.9 10000

ID = 250 μA
10 1.7
IS - Source Current (A)

VGS(th) (V)
TJ = 150 °C

2nd line
1000 1000
1 1.5

2nd line

2nd line
1st line

1st line
2nd line

TJ = 25 °C
0.1 1.3
100 100

0.01 1.1

0.001 10 0.9 10
0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150
VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C)
2nd line 2nd line

Source-Drain Diode Forward Voltage Threshold Voltage

Axis Title Axis Title

0.020 10000 500 10000
RDS(on) - On-Resistance (Ω)

400
0.015
1000 1000
Power (W)

300
2nd line

2nd line
2nd line
1st line

1st line
2nd line

0.010
TJ = 150 °C 200
100 100
0.005
100
TJ = 25 °C

0 10 0 10
2 4 6 8 10 0.0001 0.001 0.01 0.1 1 10
VGS - Gate-to-Source Voltage (V) Time (s)
2nd line 2nd line

On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient

Axis Title
1000 10000
IDM limited
100
ID - Drain Current (A)

100 us 1000
10
2nd line
1st line
2nd line

1 ms
Limited by
RDS(on) 10 ms
1
100 ms 100
10 s, 1 s
0.1
DC
TA = 25 °C
BVDSS limited
Single pulse
0.01 10
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

S18-0208-Rev. A, 19-Feb-18 4 Document Number: 75969

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 SiR165DP
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
110 10000

88

ID - Drain Current (A)

1000
66

2nd line
1st line
2nd line Limited by Package
44
100

22

0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line

Current Derating a

Axis Title Axis Title

80 10000 2.5 10000

64 2.0

1000 1000
Power (W)

Power (W)

48 1.5
2nd line

2nd line
2nd line

2nd line
1st line

1st line
32 1.0
100 100

16 0.5

0 10 0 10
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)
2nd line 2nd line

Power, Junction-to-Case Power, Junction-to-Ambient

Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

S18-0208-Rev. A, 19-Feb-18 5 Document Number: 75969

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 SiR165DP
[Link]
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
1 10000
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

Notes: 1000
0.2

2nd line
1st line
PDM
0.1 0.1
t1
0.05 t2
t 100
1. Duty cycle, D = t1
2
0.02 2. Per unit base = RthJA = 63 °C/W
Single pulse 3. TJM - TA = PDMZthJA (t)

4. Surface mounted
0.01 10
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title
10000
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

1000
0.1

2nd line
1st line
0.05

0.02 100

Single pulse
0.11 10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Case

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see [Link]/ppg?75969.

S18-0208-Rev. A, 19-Feb-18 6 Document Number: 75969

For technical questions, contact: pmostechsupport@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Package Information
[Link]
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
H L
E2 K
W E4

D4
θ
1 1

M
Z
2 2

D5
D

D1

D2
D
2
e
3 3

4 4

b
θ
L1
E3
A1 Backside View of Single Pad
θ θ
H L
E2 K
E4
A
c

D3 (2x) D4
E1 Detail Z 1
E
D1
2

D5
K1
D2
3
D2

b
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs. E3
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.

MILLIMETERS INCHES
DIM.
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 - 0.05 0 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4 0.57 typ. 0.0225 typ.
D5 3.98 typ. 0.157 typ.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4 0.75 typ. 0.030 typ.
e 1.27 BSC 0.050 BSC
K 1.27 typ. 0.050 typ.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
 0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881

Revison: 13-Feb-17 1 Document Number: 71655

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

0.260
(6.61)
0.150
(3.81)

0.024
(0.61)

(3.91)

(4.42)
0.154

0.174
0.026
(0.66)
(1.27)
0.050

0.050 0.032 0.040

(1.27) (0.82) (1.02)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index

APPLICATION NOTE

Document Number: 72599 [Link]

Revision: 21-Jan-08 15
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Revision: 01-Jan-2025 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000