NXP Semiconductors AN5296
Application Note Rev. 0, 01/2017
Effective Small Cell Solutions for MIMO
Radios
New Family of Wideband Doherty RFIC Power Amplifiers
Linearized with Dual Path Adaptive Predistortion Device
By: Thomas Maudoux, Maxim Integrated Products, Inc.,
and Dipto Moni and Leonard Pelletier,
NXP Semiconductors
INTRODUCTION Improving Amplifier Efficiency
When supplying components for small cell radios, there In all amplifier systems there is a fundamental tradeoff
are three major factors that come into the decision making between linearity and conversion efficiency. Class A
process. Do the components perform well, are they easy to amplifiers are very linear in back-off with low efficiency,
use and do they leverage integration to help shrink the overall whereas Class D amplifiers can theoretically be 100 percent
size of the radio? This application note covers the excellent efficient but also nonlinear with very high distortion products.
RF performance capabilities of NXP’s new family of RF Class D amplifiers are also difficult to implement at higher
power LDMOS ICs for 1 to 5 watt small cell applications. frequencies due to bandwidth crippling device parasitic
These products are designed for compact Doherty power effects. Typically, for lower power cellular radios, the final PA
amplifier (DPA) configurations. They are driven by NXP device is operated in a Class AB quasi linear mode and then
GaAs pHEMT linear amplifiers and are shown to linearize backed off from the P1dB compression point until the desired
with a Maxim Integrated SC2200, a fourth generation linearity is achieved. This method produces amplifier
adaptive predistortion device. Two different frequency range systems with 8 to 15 percent conversion efficiency. This
DPAs are tested under various LTE test signals. The results implementation might be acceptable if RF power
show best in class bandwidth and DC-to-RF power requirements are very low, where wasted power has minimal
conversion efficiency while still maintaining stringent cost. As RF output power increases, suddenly that wasted
linearity requirements. power can take on significant cost in the form of higher
temperatures, more expensive heat transfer solutions and
MIMO Small Cell Solutions higher operating costs. To achieve efficiencies over 40%, a
low complexity, cost-effective middle ground can be found
The cellular user’s demand for data has been growing
with the implementation of Doherty PAs (DPA). However,
exponentially. In response to these increasing data rate
DPAs are inherently less linear than Class AB PAs operating
requirements, cellular service providers are deploying
in back--off. The large jump in efficiency from the nonlinear
heterogeneous networks made up of variously sized base
DPA justifies the use of linearization systems to allow for
stations. Ranging from macro cells, with coverage of several
operation of higher efficiency while maintaining exceptional
kilometers to femtocell and picocell solutions, with coverage
linearity.
areas in the range of several meters. These smaller cell
implementations will use distributed antenna and multiple
Compare and Contrast Linearization Techniques
antenna MIMO architectures in order to provide high data
rates for quality streaming video. This will simultaneously Just like the tradeoff of efficiency versus linearity in power
connect a multitude of devices while providing extremely low amplifiers, there are tradeoffs in the type of linearization
latency in any communication environment. techniques applied. The simplest and lowest cost to
Increasing user density drives the need for an increased implement is non-adaptive linearization that can take the
number of channels and wider signal bandwidth capability, form of a lookup table either in an analog circuit or in the
higher linearity and high DC-to-RF conversion efficiency. digital domain. Non-adaptive linearization systems use a
Collectively, this drives the need for new components predefined model of a PAs transfer function. Therefore, it
requiring higher levels of integration and smaller form factors, cannot account for changes that may occur in a PAs behavior
which must be done cost--effectively to enable these system over power levels, frequency, temperature or time. Due to the
level network improvements. demands placed on modern outdoor radio systems, radio
© 2017 NXP B.V. Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
RF Application Information
NXP Semiconductors 1
architects must look to adaptive forms of linearization. memory effects generated in the PA. It is important for the
Adaptive linearization is equipped to handle nonlinear PA radio architect to weigh all the options that are available to
changes in time (memory effects) along with changes in implement the most effective solution in terms of cost and
power, frequency and temperature. Just like non-adaptive, performance. In this application note, an adaptive RF domain
adaptive linearization can come in the form of analog or (non-baseband) linearizer from Maxim Integrated Products
digital (baseband). Both have their benefits in terms of power is used to characterize the targeted PAs. Figure 1 shows the
consumption and their ability to handle large amounts of typical block diagram configuration of the DPA with linearizer.
A2I20D040N
Power SC2200 MMG20241H
1.8 V
Supply RFout A
RFin A RFin RFout
Tx Path A
RFinDLY RFFB
RFFB A
Dual RFPAL
RFFB B
RFFB
RFinDLY
Tx Path B
RFin B RFin RFout
RFout B
XTALI XTALO SPI
External
Clock
SPI Data
Figure 1. Small Cell Transmit Chain with A2I20D040N Final, MMG20241H Driver and SC2200
Table 1 shows the typical performance of the two-stage Benefits of NXP’s RF Power LDMOS Products
NXP A2I20D040N final with 30 dB gain and a single-stage
MMG20241H driver with 17 dB gain over the 1800–2200 MHz NXP is one of the world’s largest providers of RF power
frequency range linearized with a Maxim SC2200 dual path LDMOS transistors. NXP owns this top position due to
adaptive device. advanced die technologies and in-house plastic packaging
coupled with world-class thermal management. NXP’s
Table 1. Linearized NXP A2I20D040N Final and devices offer excellent product solutions that include high
MMG20241H Driver over 1800–2200 MHz efficiency, symmetrical and asymmetrical single package
Output Power Input Doherty components. These products are made easy to use
@ –50 dBc PAE Signal PAR with integrated 50 ohm, DC decoupled input matching,
Signal ACPR (%) (dB) multi-stage designs incorporating thermal compensation and
20 MHz LTE 39 dBm 41 7 ESD protection circuitry. NXP’s LDMOS RFIC products are
available in a wide range of rated power levels from 4 to
2-Carrier 39 dBm 41 7
20 MHz LTE 60 watts for a variety of small cell sizes.
Figure 2 shows a typical small cell, symmetrical Doherty
Table 2 shows the performance of the two-stage NXP design.
A2I25D025N final with 29 dB gain and a single-stage
MMG20241H driver with 15 dB gain over the 2300–2800 MHz
frequency range linearized with a Maxim SC2200 dual path
adaptive device.
Table 2. NXP A2I25D025N Final and MMG20241H Driver
over 2300–2800 MHz
Output Power Input
@ –50 dBc PAE Signal PAR
Signal ACPR (%) (dB)
20 MHz LTE 38 dBm 37 7
2-Carrier 37 dBm 35 7
20 MHz LTE
3-Carrier 35 dBm 30 7.5
20 MHz LTE
Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
RF Application Information
2 NXP Semiconductors
Figure 2. A2I20D040N 8 W Average, Symmetrical Doherty Reference Design
Benefits of NXP’s GaAs pHEMT Linear Drivers Benefits of Fully Adaptive RF Predistortion
Linearizers
To get exceptional system performance, it is important to
use a similarly high performance driver device. GaAs pHEMT The Maxim SC2200 belongs to the fourth generation family
delivers excellent bandwidth, linearity and efficiency for of RF PA linearizers (RFPAL). The Maxim SC2200 provides
devices under one watt. NXP complements their high increased integration, functionality and ease of use over the
performance LDMOS finals with a large product portfolio of previous generations with fewer external circuit board
cost-effective, GaAs pHEMT devices. They are offered in components. The device is a dual path, fully adaptive, RF in
Class A and Class AB, low power, linear driver devices and out predistortion linearization solution optimized for a
optimized for base station applications. These devices are wide range of amplifiers, power levels and communication
typically 50 ohm input and output matched and operate with protocols. It supports cellular 2G to 4G standards (FDD and
a 5 V supply. Designed with ease of use in mind, only simple TDD) from 698 to 2700 MHz. It also has an expanded range
external circuit components are required and industry of signal bandwidths from 1.2 MHz up to 60 MHz. The SC2200
standard, cost--effective SOT-89 packaging is used. NXP’s operates single ended and features a mirrored pinout
universal drivers are differentiated by higher P1dB and facilitating designs of both paths. By sampling both the input
third-order intercept levels with exceptionally high multi-stage signal to the PA lineup and the DPA output, the device
gain and excellent instantaneous signal bandwidths (ISBW) adaptively generates an optimized error correction function to
greater than 60 MHz. Figure 3 shows a typical GaAS pHEMT minimize the DPA’s distortion. The device uses the ninth-order
driver design. polynomial Volterra series to create the pre-correction signal
that is coupled back into the input signal to the PA. The use of
RF domain analog signal processing enables the SC2200 to
operate over wide bandwidths with very low power
consumption. The dual linearizer can be used for MIMO small
cell, active antenna systems as well as remote radio heads
and distributed antennas. Figure 4 shows a typical RFPAL
layout with external PCB components.
Figure 3. MMG20241H GaAs pHEMT MMIC Driver
Reference Design
Figure 4. SC2200 RFPAL Layout Showing External
PCB Components
Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
RF Application Information
NXP Semiconductors 3
NXP Family of Power Amplifiers This product is packaged in an industry-standard TO-270-WB
package using the exclusive NXP path isolation technology
The MMG20241H is a 24 dBm P1dB, one-stage GaAs and internal temperature compensation circuitry.
pHEMT with more than 17 dB of gain housed in a cost-effective The A2I25D025N is a two-stage, dual path RFIC LDMOS
SOT-89 package. This device is capable of handling a 20 MHz component with 32 dB Class AB gain and a 25 W P1dB rating.
wideband LTE signal at 13 dBm with ACPR of –45 dBc and at This product is also packaged in an industry-standard TO-
8 dBm with ACPR of –55 dBc. Its excellent linearity as a driver 270-WB package using the exclusive NXP path isolation
is critical for the wideband performance in this application. technology and internal temperature compensation circuitry.
The A2I20D040N is a two-stage, dual path RFIC LDMOS Table 3 provides an overview of the NXP family of 28 V
component with 33 dB Class AB gain and a 40 W P1dB rating. LDMOS RFICs with a two-stage, dual path configuration.
Table 3. Recommended Small Cell Portfolio of NXP 28 V LDMOS RFICs
Antenna Power Up to 1000 MHz 1400–2200 MHz 2300–2900 MHz 3400–3800 MHz
5W A2I08H040N A2I20D040N A2I25H060N A2I35H060N
1–2 W MD8IC925N A2I20D020N A2I25D025N
The following before and after drive up curves show that the incorporation of the Maxim SC2200 predistortion device into the
A2I20D040N DPA allows the system to achieve 39 dBm PA output power with 41% efficiency and ACPR at –50 dBc. The great
linearity of the MMG20241H driver is critical for wideband performance. At 8 dB or higher output back--off, the ACPR for 2-carrier
20 MHz LTE at 7 dB PAR is –51 dBc or better.
47 60 0
VDD = 28 Vdc, IDQT = 198 mA
PAE, POWER ADDED EFFICIENCY (%)
20 MHz LTE –10
46 Input Signal PAR = 7.0 dB 50
Gps, POWER GAIN (dB)
45 40 –20
Gps
ACPR (dBc)
44 30 –30
PAE ACPR
43 Unlinearized 20 –40
ACPR –50
42 Linearized 10
41 0 –60
1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Test Results with A2I20D040N: 20 MHz LTE,
7 dB PAR with SC2200 at 1860 MHz
Here the results on the same amplifier system are shown in Figure 6, this time with a much more challenging 2-carrier 20 MHz
wideband LTE test signal.
47 60 0
VDD = 28 Vdc, IDQT = 198 mA
PAE, POWER ADDED EFFICIENCY (%)
2--Carrier 20 MHz LTE –10
46 50
Input Signal PAR = 7.0 dB
Gps, POWER GAIN (dB)
45 40 –20
ACPR (dBc)
Gps
44 30 –30
PAE ACPR
Unlinearized
43 20 –40
ACPR
42 Linearized 10 –50
41 0 –60
1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Test Results with A2I20D040N: 2--Carrier
20 MHz LTE, 7 dB PAR with SC2200 at 1860 MHz
Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
RF Application Information
4 NXP Semiconductors
With a single--carrier 20 MHz LTE signal, the A2I25D025N power amplifier system with SC2200 can achieve 37% efficiency at
38 dBm average output power.
52 60 0
VDD = 28 Vdc, IDQT = 116 mA
PAE, POWER ADDED EFFICIENCY (%)
20 MHz LTE –10
51 50
Input Signal PAR = 7.0 dB
Gps, POWER GAIN (dB)
50 40 –20
ACPR (dBc)
Gps
49 30 –30
PAE ACPR
Unlinearized
48 20 –40
47 10 –50
ACPR
Linearized
46 0 –60
1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Test Results with A2I25D025N: 20 MHz LTE,
7 dB PAR with SC2200 at 2660 MHz
With a 3--carrier 20 MHz LTE signal (60 MHz total), the A2I25D025N power amplifier system with SC2200 can achieve 30%
efficiency at 35 dBm average output power.
52 60 0
VDD = 28 Vdc, IDQT = 116 mA
PAE, POWER ADDED EFFICIENCY (%)
3--Carrier 20 MHz LTE –10
51 50
Input Signal PAR = 7.0 dB
Gps, POWER GAIN (dB)
50 40 –20
Gps
ACPR (dBc)
49 30 –30
PAE ACPR
Unlinearized
48 20 –40
47 ACPR 10 –50
Linearized
46 0 –60
1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Test Results with A2I25D025N: 3-Carrier
20 MHz LTE, 7 dB PAR with SC2200 at 2660 MHz
Conclusion
This application note has demonstrated a high Maxim SC2200 dual path predistortion device for LTE signals
performance, easy to use and highly integrated linearized as wide as 60 MHz. The Maxim RFPAL device provides up to
power amplifier system through the implementation of a 28 dB of ACPR improvement and 38 dBm of IMD improvement.
Doherty configuration with the latest NXP family of LDMOS Data sheets and references designs are available for all
RFICs linearized with the Maxim SC2200 dual path components shown.
predistortion device. The overall solution presented is cost-- For more information on this family of NXP LDMOS RFICs
effective with a low order of complexity for MIMO small cell, and GaAs low power devices, visit
active antenna systems as well as remote radio heads and [Link]/RFoutdoorsmallcell.
distributed antennas. The native high linearity of the NXP For more information on the SC2200, visit
LDMOS RFICs and GaAs MMIC devices is enhanced with the [Link]/SC2200.
Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
RF Application Information
NXP Semiconductors 5
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Jan. 2017 • Initial Release of Application Note
Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
RF Application Information
6 NXP Semiconductors
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E 2017 NXP B.V.
Effective Small Cell Solutions for MIMO Radios, Rev. 0, 01/2017
AN5296
RF
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NXP Semiconductors 7
