PR OFET™ + 24V

BTT6200-4EMA
Smart High-Side Power Switch
Quad Channel, 200mΩ

Data Sheet
PROFET™+ 24V
Rev. 1.0, 2014-08-20

Automotive Power
 BTT6200-4EMA

Table of Contents

Table of Contents

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3 Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3.1 PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3.2 Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1 Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.2 Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3 Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.1 Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.2 Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4 Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.5 Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2 Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.3 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.4 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5.1 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.5.2 Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.6 Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7 Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7.1 IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7.2 SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.3 SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.3.1 SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . 28
7.3.2 SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7.3.3 SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
[Link] Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
[Link] Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
[Link] Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7.3.4 SENSE Signal in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7.3.5 SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7.3.6 SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7.4 Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
8 Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
8.1 Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
8.2 DEN / DSEL0,1 Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Data Sheet 2 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Table of Contents

8.3 Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

8.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9 Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9.1 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9.2 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
9.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
9.4 Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
9.5 Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
10 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
10.1 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Data Sheet 3 Rev. 1.0, 2014-08-20

PROFET™+ 24V
Smart High-Side Power Switch BTT6200-4EMA

1 Overview

Application
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Most suitable for loads with high inrush current, such as lamps
• Suitable for 24V Trucks and Transportation System

Basic Features
PG-SSOP-24-14 EP
• Quad channel device
• Very low stand-by current
• 3.3 V and 5 V compatible logic inputs
• Electrostatic discharge protection (ESD)
• Optimized electromagnetic compatibility
• Logic ground independent from load ground
• Very low power DMOS leakage current in OFF state
• Green product (RoHS compliant)
• AEC qualified

Description
The BTT6200-4EMA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-SSOP-24-14
EP , Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an
N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is
specially designed to drive lamps up to R10W 24V or R5W 12V, as well as LEDs in the harsh automotive
environment.

Table 1 Product Summary

Parameter Symbol Value
Operating voltage range VS(OP) 5 V ... 36 V
Maximum supply voltage VS(LD) 65 V
Maximum ON state resistance at TJ = 150 °C per channel RDS(ON) 400 mΩ
Nominal load current (one channel active) IL(NOM)1 1.5 A
Nominal load current (all channels active) IL(NOM)2 1A
Typical current sense ratio kILIS 300

Type Package Marking

BTT6200-4EMA PG-SSOP-24-14 EP BTT6200-4EMA

Data Sheet 4 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Overview

Table 1 Product Summary (cont’d)

Parameter Symbol Value
Minimum current limitation IL5(SC) 9A
Maximum standby current with load at TJ = 25 °C IS(OFF) 500 nA

Diagnostic Functions
• Proportional load current sense multiplexed for the 4 channels
• Open load detection in ON and OFF
• Short circuit to battery and ground indication
• Overtemperature switch off detection
• Stable diagnostic signal during short circuit
• Enhanced kILIS dependency with temperature and load current

Protection Functions
• Stable behavior during undervoltage
• Reverse polarity protection with external components
• Secure load turn-off during logic ground disconnection with external components
• Overtemperature protection with latch
• Overvoltage protection with external components
• Enhanced short circuit operation

Data Sheet 5 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Block Diagram

2 Block Diagram

Channel 0
VS

voltage sensor
internal
power
over T
supply
temperature clamp for
inductive load
IN0 gate control
driver & over current
logic charge pump switch limit
DEN ESD
protection load current sense and OUT 0
open load detection
IS

forward voltage drop detection

VS

Channel 1

IN1 Control and protection circuit equivalent to channel 0

DSEL0
DSEL1
OUT 1

Channel 2

Control and protection circuit equivalent to channel 0

IN2

OUT 2

Channel 3

Control and protection circuit equivalent to channel 0

IN3
OUT 3

GND
Block diagram [Link]

Figure 1 Block Diagram for the BTT6200-4EMA

Data Sheet 6 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Pin Configuration

3 Pin Configuration

3.1 Pin Assignment

NC 1 24 OUT0
IN0 2 23 NC
NC 3 22 NC
GND 4 21 NC
IN1 5 20 OUT1
DEN 6 19 NC
IS 7 18 NC
DSEL0 8 17 OUT2
IN2 9 16 NC
IN3 10 15 NC
DSEL1 11 14 NC
NC 12 13 OUT3

[Link]
Figure 2 Pin Configuration

3.2 Pin Definitions and Functions

Pin Symbol Function

1, 3, 12, 14, 15, NC Not Connected; No internal connection to the chip
16, 18, 19 , 21, 22,
23
2 IN0 INput channel 0; Input signal for channel 0 activation
4 GND GrouND; Ground connection
5 IN1 INput channel 1; Input signal for channel 1 activation
6 DEN Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
7 IS Sense; Sense current of the selected channel
8 DSEL0 Diagnostic SELection; Digital signal to select the channel to be diagnosed
9 IN2 INput channel 2; Input signal for channel 2 activation
10 IN3 INput channel 3; Input signal for channel 3 activation
11 DSEL1 Diagnostic SELection; Digital signal to select the channel to be diagnosed
13 OUT3 OUTput 3; Protected high side power output channel 3

Data Sheet 7 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Pin Configuration

Pin Symbol Function

17 OUT2 OUTput 2; Protected high side power output channel 2
20 OUT1 OUTput 1; Protected high side power output channel 1
24 OUT0 OUTput 0; Protected high side power output channel 0
Cooling Tab VS Voltage Supply; Battery voltage

3.3 Voltage and Current Definition

Figure 3 shows all terms used in this data sheet, with associated convention for positive values.

IS VDS0 VDS1 VDS2 VDS3

VS

VS
IIN0
IN0 IOUT0
VIN0
IIN1 OUT0
IN1
VIN1 IIN2
IN2 IOUT1
VIN2 IIN3 OUT1
IN3
VIN3 IDEN
DEN IOUT2
V DEN IDSEL0 OUT2
DSEL0
VDSEL 0 IDSEL1
DSEL1 IOUT3
VDSEL 1 IIS OUT3
IS
VIS
GND

VOUT0 VOUT 1 VOUT2 VOUT3

IGND

voltage and current [Link]

Figure 3 Voltage and Current Definition

Data Sheet 8 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Table 2 Absolute Maximum Ratings 1)

TJ = -40°C to 150°C; (unless otherwise specified)
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Supply Voltages
Supply voltage VS -0.3 – 48 V – P_4.1.1
Reverse polarity voltage -VS(REV) 0 – 28 V t < 2 min P_4.1.2
TA = 25 °C
RL ≥ 47 Ω
ZGND = Diode
+27 Ω
Supply voltage for short VBAT(SC) 0 – 36 V RSupply = 10 mΩ P_4.1.3
circuit protection LSupply = 5 µH
RECU= 20 mΩ
RCable= 16 mΩ/m
LCable= 1 µH/m,
l = 0 or 5 m
See Chapter 6
and Figure 28
2)
Supply voltage for Load dump VS(LD) – – 65 V RI = 2 Ω P_4.1.12
protection RL = 47 Ω
Short Circuit Capability
3)
Permanent short circuit nRSC1 – – 100 k _ P_4.1.4
IN pin toggles cycles
Input Pins
Voltage at INPUT pins VIN -0.3 – 6 V – P_4.1.13
– 7 t < 2 min
Current through INPUT pins IIN -2 – 2 mA – P_4.1.14
Voltage at DEN pin VDEN -0.3 – 6 V – P_4.1.15
– 7 t < 2 min
Current through DEN pin IDEN -2 – 2 mA – P_4.1.16
Voltage at DSEL pin VDSEL -0.3 – 6 V – P_4.1.17
– 7 t < 2 min
Current through DSEL pin IDSEL -2 – 2 mA – P_4.1.18
Sense Pin
Voltage at IS pin VIS -0.3 – VS V – P_4.1.19
Current through IS pin IIS -25 – 50 mA – P_4.1.20
Power Stage
Load current | IL | – – IL(LIM) A – P_4.1.21

Data Sheet 9 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

General Product Characteristics

Table 2 Absolute Maximum Ratings (cont’d)1)

TJ = -40°C to 150°C; (unless otherwise specified)
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Power dissipation (DC) PTOT – – 1.8 W TA = 85 °C P_4.1.22
TJ < 150 °C
Maximum energy dissipation EAS – – 20 mJ IL(0) = 1 A P_4.1.23
Single pulse (one channel) TJ(0) = 150 °C
VS = 28 V
Voltage at power transistor VDS – – 65 V – P_4.1.26
Currents
Current through ground pin I GND -20 – 20 mA – P_4.1.27
-150 20 t < 2 min
Temperatures
Junction temperature TJ -40 – 150 °C – P_4.1.28
Storage temperature TSTG -55 – 150 °C – P_4.1.30
ESD Susceptibility
4)
ESD susceptibility (all pins) VESD -2 – 2 kV HBM P_4.1.31
4)
ESD susceptibility OUT Pin VESD -4 – 4 kV HBM P_4.1.32
vs. GND and VS connected
5)
ESD susceptibility VESD -500 – 500 V CDM P_4.1.33
5)
ESD susceptibility pin VESD -750 – 750 V CDM P_4.1.34
(corner pins)
1) Not subject to production test. Specified by design.
2) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
3) Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit capability at the end
of this document.
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS-001.
5) “CDM” ESDA STM5.3.1 or ANSI/ESD [Link]

Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.

Data Sheet 10 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

General Product Characteristics

4.2 Functional Range

Table 3 Functional Range TJ = -40°C to 150°C; (unless otherwise specified)

Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Nominal operating voltage VNOM 8 28 36 V – P_4.2.1
2)
Extended operating voltage VS(OP) 5 – 48 V VIN = 4.5 V P_4.2.2
RL = 47 Ω
VDS < 0.5 V
1)
Minimum functional supply VS(OP)_MIN 3.8 4.3 5 V VIN = 4.5 V P_4.2.3
voltage RL = 47 Ω
From IOUT = 0 A
to
VDS < 0.5 V; see
Figure 15
1)
Undervoltage shutdown VS(UV) 3 3.5 4.1 V VIN = 4.5 V P_4.2.4
VDEN = 0 V
RL = 47 Ω
From VDS < 1 V;
to IOUT = 0 A
See Chapter 9.1
and Figure 15
2)
Undervoltage shutdown VS(UV)_HYS – 850 – mV – P_4.2.13
hysteresis
Operating current IGND_1 – 2 4 mA VIN = 5.5 V P_4.2.5
One channel active VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Chapter 9.1
Operating current IGND_4 – 6 9 mA VIN = 5.5 V P_4.2.6
All channels active VDEN = 5.5 V
Device in RDS(ON)
VS = 36 V
See Chapter 9.1
1)
Standby current for whole IS(OFF) – 0.1 0.5 µA VS = 36 V P_4.2.7
device with load (ambiente) VOUT = 0 V
VIN floating
VDEN floating
TJ ≤ 85 °C

Data Sheet 11 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

General Product Characteristics

Table 3 Functional Range (cont’d)TJ = -40°C to 150°C; (unless otherwise specified)

Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Maximum standby current for IS(OFF)_150 – – 20 µA VS = 36 V P_4.2.10
whole device with load VOUT = 0 V
VIN floating
VDEN floating
TJ = 150 °C
2)
Standby current for whole IS(OFF_DEN) – 0.6 – mA VS = 36 V P_4.2.8
device with load, diagnostic VOUT = 0 V
active VIN floating
VDEN = 5.5 V
1) Test at TJ = -40°C only
2) Not subject to production test. Specified by design.

Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.

4.3 Thermal Resistance

Table 4 Thermal Resistance

Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
1)
Junction to soldering point RthJS – 5 – K/W P_4.3.1
1)2)
Junction to ambient RthJA – 30 – K/W P_4.3.2
All channels active
1) Not subject to production test. Specified by design.
2) Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (chip +
package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35 µm Cu). Where
applicable, a thermal via array under the exposed pad contacts the first inner copper layer. Please refer to Figure 4.

4.3.1 PCB set up

70µm

1.5mm
35µm

0.3mm PCB [Link]

Figure 4 2s2p PCB Cross Section

Data Sheet 12 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

General Product Characteristics

PCB bottom view

PCB top view

1 1

2 2

1 1

2 2

2 2

1 COOLING 1
TAB

2 VS 2

2 2

1 1

2 2

1 1

2 2

PCB_600_SSOP24.vsd

Figure 5 PC Board Top and Bottom View for Thermal Simulation with 600 mm² Cooling Area

4.3.2 Thermal Impedance

100

10
Zth‐ja [K/W]

1s0p‐footprint
1s0p‐300mm²
1s0p‐600mm²
2s2p

0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time [s]

Figure 6 Typical Thermal Impedance. 2s2p PCB set up according Figure 4

Data Sheet 13 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

General Product Characteristics

80

75

70

65

60
Rthja [K/W]

55

50

45
1s0p
40

35

30
0 100 200 300 400 500 600 700
2
footprint Area [mm ]

Figure 7 Typical Thermal Resistance. PCB set-up 1s0p

Data Sheet 14 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Power Stage

5 Power Stage
The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.

5.1 Output ON-state Resistance

The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.

400

320

350 300

280

300
260
RDS(ON) [mΩ ]

RDS(ON) [mΩ ]
240
250
220

200
200
180

160
150

140

100 120
-40 -20 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35
Junction Temperature TJ [°C] Supply Voltage VS [V]

Figure 8 Typical ON-state Resistance

A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.

5.2 Turn ON/OFF Characteristics with Resistive Load

Figure 9 shows the typical timing when switching a resistive load.

IN

VIN_H
VIN_L
t
VOUT dV/dt ON dV/dt OFF
t ON
90% VS
tOFF_delay
70% VS

30% VS
tON_delay tOFF
10% VS
t

Switching [Link]

Figure 9 Switching a Resistive Load Timing

Data Sheet 15 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Power Stage

5.3 Inductive Load

5.3.1 Output Clamping

When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless,
the maximum allowed load inductance is limited.

VS
ZDS(AZ)
VDS
INx
LOGIC

VBAT IL

GND OUTx

VIN L, RL
VOUT
ZGND

Output [Link]

Figure 10 Output Clamp

IN

t
V OUT
VS

V S-VDS(AZ)

IL

t
Switching an [Link]

Figure 11 Switching an Inductive Load Timing

5.3.2 Maximum Load Inductance

During demagnetization of inductive loads, energy has to be dissipated in the BTT6200-4EMA. This energy can
be calculated with following equation:

V S – V DS ( AZ ) RL × IL ⎞
× ln ⎛ 1 – --------------------------------
L
E = V DS ( AZ ) × ------ × -------------------------------- ⎝
+I (1)
RL RL V S – V DS ( AZ )⎠ L

Data Sheet 16 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Power Stage

Following equation simplifies under the assumption of RL = 0 Ω.

1 VS
E = --- × L × I × ⎛⎝ 1 – --------------------------------⎞
2
(2)
2 V S – V DS ( AZ )⎠
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.

100
EAS (mJ)

10

1
0 0.5 1 1.5 2 2.5 3
IL(A)

Figure 12 Maximum Energy Dissipation Single Pulse, TJ_START = 150 °C; VS = 28V

5.4 Inverse Current Capability

In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not
be higher than IL(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel
is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of
VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV
vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions are
available.

Data Sheet 17 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Power Stage

VBAT

VS

Gate driver

VINV
Device OL
INV
IL(INV)
logic Comp.
comp. OUT

GND

IS
ZGND

inverse [Link]

Figure 13 Inverse Current Circuitry

Data Sheet 18 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Power Stage

5.5 Electrical Characteristics Power Stage

Table 5 Electrical Characteristics: Power Stage

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
ON-state resistance per RDS(ON)_150 300 360 400 mΩ IL = IL4 = 1 A P_5.5.1
channel VIN = 4.5 V
TJ = 150 °C
See Figure 8
1)
ON-state resistance per RDS(ON)_25 – 200 – mΩ TJ = 25 °C P_5.5.21
channel
1)
Nominal load current IL(NOM)1 – 1.5 – A TA = 85 °C P_5.5.2
One channel active TJ < 150 °C
Nominal load current IL(NOM)2 – 1 – A P_5.5.3
All channels active
Output voltage drop limitation VDS(NL) – 10 22 mV IL = IL0 = 25 mA P_5.5.4
at small load currents See Chapter 9.3
Drain to source clamping VDS(AZ) 65 70 75 V IDS = 5 mA P_5.5.5
voltage See Figure 11
VDS(AZ) = [VS - VOUT] See Chapter 9.1
2)
Output leakage current per IL(OFF) – 0.1 0.5 µA VIN floating P_5.5.6
channel TJ ≤ 85 °C VOUT = 0 V
TJ ≤ 85 °C
Output leakage current per IL(OFF)_150 – 1 5 µA VIN floating P_5.5.8
channel TJ = 150 °C VOUT = 0 V
TJ = 150 °C
1)
Inverse current capability IL(INV) – 1 – A VS < VOUTX P_5.5.9
See Figure 13
Slew rate dV/dtON 0.3 0.8 1.3 V/µs RL = 47 Ω P_5.5.11
30% to 70% VS VS = 28 V
Slew rate -dV/dtOFF 0.3 0.8 1.3 V/µs See Figure 9 P_5.5.12
70% to 30% VS See Chapter 9.1
Slew rate matching ∆dV/dt -0.15 0 0.15 V/µs P_5.5.13
dV/dtON - dV/dtOFF
Turn-ON time to VOUT = 90% tON 20 70 150 µs P_5.5.14
VS
Turn-OFF time to VOUT = 10% tOFF 20 70 150 µs P_5.5.15
VS
Turn-ON / OFF matching ∆tSW -50 0 50 µs P_5.5.16
tOFF - tON
Turn-ON time to VOUT = 10% tON_delay – 35 70 µs P_5.5.17
VS
Turn-OFF time to VOUT = 90% tOFF_delay – 35 70 µs P_5.5.18
VS

Data Sheet 19 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Power Stage

Table 5 Electrical Characteristics: Power Stage (cont’d)

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
1)
Switch ON energy EON – 190 – µJ RL = 47 Ω P_5.5.19
VOUT = 90% VS
VS = 36 V
See Chapter 9.1
1)
Switch OFF energy EOFF – 210 – µJ RL = 47 Ω P_5.5.20
VOUT = 10% VS
VS = 36 V
See Chapter 9.1
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only

Data Sheet 20 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Protection Functions

6 Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.

6.1 Loss of Ground Protection

In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pins.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTT6200-4EMA to ensure switching OFF of channels.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 14 sketches
the situation.
ZGND is recommended to be a resistor in series to a diode .

ZIS(AZ) VS

ZD(AZ) ZDS(AZ) VBAT

IS
RSENSE

DSEL0
R DSEL
DSEL1
R DSEL
DEN LOGIC
R DEN
INx
R IN IOUT(GND)

OUTx

ZDESD GND
RIS
IS

ZGND

Loss of ground protection

.vsd

Figure 14 Loss of Ground Protection with External Components

6.2 Undervoltage Protection

Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON.
If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the
supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch
is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM
range. Figure 15 sketches the undervoltage mechanism.

Data Sheet 21 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Protection Functions

VOUT

undervoltage behavior
.vsd

VS
VS(UV) VS(OP)

Figure 15 Undervoltage Behavior

6.3 Overvoltage Protection

There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16
shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power
transistor switches ON and in addition the voltage across the logic section is clamped. As a result, the internal
ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx, DSELx, and DEN rises
almost to that potential, depending on the impedance of the connected circuitry. In the case the device was ON,
prior to overvoltage, the BTT6200-4EMA remains ON. In the case the BTT6200-4EMA was OFF, prior to
overvoltage, the power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below
VDS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the ON state,
parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply voltage range. This
especially impacts the short circuit robustness, as well as the maximum energy EAS capability. ZGND is
recommended to be a resistor in series to a diode.

ISOV

ZIS(AZ) VS

ZD(AZ) ZDS(AZ) VBAT

IS
RSENSE

DSEL0
R DSEL
DSEL1
R DSEL
DEN LOGIC
R DEN

R IN
INx

OUTx

ZDESD GND
R IS

ZGND

Overvoltage [Link]

Figure 16 Overvoltage Protection with External Components

Data Sheet 22 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Protection Functions

6.4 Reverse Polarity Protection

In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins
has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows a
typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDSEL,
RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used
to limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RDSEL =
RIN = RSENSE = 10 kΩ. It is recommended to use a resistor in series to a diode in the ground path.
During reverse polarity, no protection functions are available.

Micro controller
protection diodes Z IS(AZ) VS

ZD(AZ) ZDS(AZ)
IS
RSENSE
VDS(REV)
DSEL0
RDSEL0
DSEL1
RDSEL1
DEN LOGIC
R DEN
INx -V S(REV)
IN0 R IN

OUTx

ZDESD GND
IS
R GND
R IS

Reverse [Link]

Figure 17 Reverse Polarity Protection with External Components

6.5 Overload Protection

In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6200-4EMA offers
several protection mechanisms.

6.5.1 Current Limitation

At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS.

6.5.2 Temperature Limitation in the Power DMOS

Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of
either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF
latches the output until the temperature has reached an acceptable value. Figure 18 gives a sketch of the
situation.
No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).

Data Sheet 23 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Protection Functions

IN

t
IL
LOAD CURRENT BELOW
LOAD CURRENT LIMITATION PHASE
LIMITATION PHASE
IL(x)SC

IL(NOM)

t
TDMOS

TJ(SC) Temperature
protection phase

ΔTJ(SW)

TA t
tsIS(FAULT)

IIS tsIS(OC_blank)

IIS(FAULT)

IL(NOM) / kILIS
0A t
VDEN tsIS(OFF)

0V t
Hard [Link]

Figure 18 Overload Protection

Note: For better understanding, the time scale is not linear. The real timing of this drawing is application dependant
and cannot be described.

Data Sheet 24 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Protection Functions

6.6 Electrical Characteristics for the Protection Functions

Table 6 Electrical Characteristics: Protection

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Loss of Ground
1)2)
Output leakage current while IOUT(GND) – 0.1 – mA VS = 28 V P_6.6.1
GND disconnected See Figure 14
Reverse Polarity
3)
Drain source diode voltage VDS(REV) 200 650 700 mV IL = - 1 A P_6.6.2
during reverse polarity See Figure 17
Overvoltage
Overvoltage protection VS(AZ) 65 70 75 V ISOV = 5 mA P_6.6.3
See Figure 16
Overload Condition
4)
Load current limitation IL5(SC) 9 11 14 A VDS = 5 V P_6.6.4
See Figure 18 and
Chapter 9.3
5)
Dynamic temperature ΔTJ(SW) – 80 – K See Figure 18 P_6.6.8
increase while switching
Thermal shutdown TJ(SC) 150 1705) 2005) °C 3)
See Figure 18 P_6.6.10
temperature
2)
Thermal shutdown hysteresis ΔTJ(SC) – 30 – K P_6.6.11
1) All pins are disconnected except VS and OUT.
2) Not Subject to production test, specified by design
3) Test at TJ = +150°C only
4) Test at TJ = -40°C only
5) Functional test only

Data Sheet 25 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

7 Diagnostic Functions
For diagnosis purpose, the BTT6200-4EMA provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the sense current of the channel X is enabled/disabled via associated pins DSEL0 and DSEL1.
Table 7 gives the truth table.

Table 7 Diagnostic Truth Table

DEN DSEL1 DSEL0 IS
0 don’t care don’t care Z Z Z Z
1 0 0 IIS0 0 0 0
1 0 1 0 IIS1 0 0
1 1 0 0 0 IIS2 0
1 1 1 0 0 0 IIS3

7.1 IS Pin
The BTT6200-4EMA provides a sense signal called IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 19. The accuracy of the sense current depends on temperature and load
current. The sense pin multiplexes the currents IIS(0), IIS(1), IIS(2) and IIS(3) via the pins DSEL0 and DSEL1. Thanks
to this multiplexing, the matching between kILISCHANNEL0, kILISCHANNEL1, kILISCHANNEL2 and kILISCHANNEL3 is optimized.
Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other devices if
these devices are using another battery feed. The consequence is that the unsupplied device would be fed via the
IS pin of the supplied device.

VS

I IS0 = IIS1 = I IS2 = IIS 3 =

I L0 / k ILIS IIS(FAULT) IL1 / kILIS I L2 / kILIS IL3 / kILIS

ZIS(AZ)

0
FAULT
1 1

IS 1
0
0
DEN
FAULT
1
DSEL1

DSEL0 Sense [Link]

Figure 19 Diagnostic Block Diagram

Data Sheet 26 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

7.2 SENSE Signal in Different Operating Modes

Table 8 gives a quick reference for the state of the IS pin during device operation.

Table 8 Sense Signal, Function of Operation Mode

Operation Mode Input level Channel X DEN1) Output Level Diagnostic Output
Normal operation OFF H Z Z
Short circuit to GND ~ GND Z
Overtemperature Z Z
Short circuit to VS VS IIS(FAULT)
Open Load < VOL(OFF) Z
> VOL(OFF)2) IIS(FAULT)
Inverse current ~ VINV IIS(FAULT)
Normal operation ON ~ VS IIS = IL / kILIS
Current limitation < VS IIS(FAULT)
Short circuit to GND ~ GND IIS(FAULT)
Overtemperature TJ(SW) Z IIS(FAULT)
event
Short circuit to VS VS IIS < IL / kILIS
Open Load ~ VS3) IIS < IIS(OL)
Inverse current ~ VINV IIS < IIS(OL)4)
Underload ~ VS5) IIS(OL) < IIS < IL / kILIS
Don’t care Don’t care L Don’t care Z
1) The table doesn’t indicate but it is assumed that the appropriate channel is selected via the DSEL pins.
2) Stable with additional pull-up resistor.
3) The output current has to be smaller than IL(OL).
4) After maximum tINV.
5) The output current has to be higher than IL(OL).

7.3 SENSE Signal in the Nominal Current Range

Figure 20 shows the current sense as a function of the load current in the power DMOS. Usually, a pull-down
resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit the power
losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense current, assuming
an ideal kILIS factor value. The red curves shows the accuracy the device provides across full temperature range
at a defined current.

Data Sheet 27 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

4
IIS [mA]

min/max Sense Current

typical Sense Current
0
0 0.5 1 1.5
IL [A]
BTT6200-4EMA

Figure 20 Current Sense for Nominal Load

7.3.1 SENSE Signal Variation as a Function of Temperature and Load Current

In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement, a
calibration on the application is possible. To avoid multiple calibration points at different load and temperature
conditions, the BTT6200-4EMA allows limited derating of the kILIS value, at a given point (IL3; TJ = +25 °C). This
derating is described by the parameter ∆kILIS. Figure 21 shows the behavior of the sense current, assuming one
calibration point at nominal load at +25 °C.
The blue line indicates the ideal kILIS ratio.
The green lines indicate the derating on the parameter across temperature and voltage, assuming one calibration
point at nominal temperature and nominal battery voltage.
The red lines indicate the kILIS accuracy without calibration.

Data Sheet 28 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

500
calibrated k ILIS
min/max k ILIS
450 typical k ILIS

400

350
k ILIS

300

250

200

150
0 0.5 1 1.5
IL [A]
BTT6200-4EMA

Figure 21 Improved Current Sense Accuracy with One Calibration Point at 0.2A

7.3.2 SENSE Signal Timing

Figure 22 shows the timing during settling and disabling of the SENSE.

VINx

t
ILx
tONx tOFFx tONx

90% of
IL static
t
VDEN

t
IIS tsIS(LC)
tsIS(chC)
tsIS(ON) tsIS(OFF)
tsIS(ON_DEN)
90% of
IIS static

t
VDSEL

t
VINy

t
ILy
tONy

t
current sense settling disabling time .vsd

Figure 22 Current Sense Settling / Disabling Timing

Data Sheet 29 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

7.3.3 SENSE Signal in Open Load

[Link] Open Load in ON Diagnostic

If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power
DMOS is below this value, the device recognizes a failure, if the DEN (and DSEL) is selected. In that case, the
SENSE current is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL).
Figure 23 shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue
curve shows the ideal current sense.

I IS

IIS(OL)

IL
IL(OL)
Sense for OL .vsd

Figure 23 Current Sense Ratio for Low Currents

[Link] Open Load in OFF Diagnostic

For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be
taken into account. Figure 24 gives a sketch of the situation. Ileakage defines the leakage current in the complete
system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc... in the
application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel x
is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by
the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched
to the IIS(FAULT).
An additional RPD resistor can be used to pull VOUT to 0V. Otherwise, the OUT pin is floating. This resistor can be
used as well for short circuit to battery detection, see Chapter 7.3.4.

Data Sheet 30 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

Vbat

SOL

VS
IIS(FAULT)

R OL
OL
comp.

OUT
IS
ILOFF
Ileakage
GND
RIS

R PD
ZGND

Rleakage
VOL(OFF)

Open Load in [Link]

Figure 24 Open Load Detection in OFF Electrical Equivalent Circuit

[Link] Open Load Diagnostic Timing

Figure 25 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please
note that a delay tsIS(FAULT_OL_OFF) has to be respected after the falling edge of the input, when applying an open
load in OFF diagnosis request, otherwise the diagnosis can be wrong.

Load is present Open load

VIN

VOUT t
VS-V OL(OFF)
RDS(ON) x IL shutdown with load

IOUT t

tsIS(FAULT_OL_ON_OFF) t
IIS
tsIS(LC)

Error Settling Disabling [Link] t

Figure 25 Sense Signal in Open Load Timing

7.3.4 SENSE Signal in Short Circuit to VS

In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTT6200-4EMA, which can be recognized at the current sense
signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case,
an external resistor to ground RSC_VS is required. Figure 26 gives a sketch of the situation.

Data Sheet 31 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

Vbat

VS

IIS(FAULT) VBAT
OL
comp.

IS
OUT

V OL(OFF)
GND

IS
RIS ZGND
RSC_VS

Short circuit to [Link]

Figure 26 Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit

7.3.5 SENSE Signal in Case of Overload

An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the
absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal
shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic temperature
condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If the DEN pin is
activated, and DSEL pin is selected to the correct channel, the SENSE follows the output stage. If no reset of the
latch occurs, the device remains in the latching phase and IIS(FAULT) at the IS pin, eventhough the DMOS is OFF.

7.3.6 SENSE Signal in Case of Inverse Current

In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and
indicate open load in ON state. The unaffected channels indicate normal behavior as long as the IINV current is not
exceeding the maximum value specified in Chapter 5.4.

Data Sheet 32 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

7.4 Electrical Characteristics Diagnostic Function

Table 9 Electrical Characteristics: Diagnostics

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Load Condition Threshold for Diagnostic
1)
Open load detection VS - VOL(OFF) 4 – 6 V VIN = 0 V P_7.5.1
threshold in OFF state VDEN = 4.5 V
See Figure 25
Open load detection IL(OL) 5 – 15 mA VIN = VDEN = 4.5 V P_7.5.2
threshold in ON state IIS(OL) = 33 μA
See Figure 23
See Chapter 9.4
Sense Pin
1)
IS pin leakage current when IIS_(DIS) – 0.02 1 µA VIN = 4.5 V P_7.5.4
sense is disabled VDEN = 0 V
IL = IL4 = 1 A
Sense signal saturation VS - VIS 1 – 3.5 V VIN = 0 V P_7.5.6
voltage (RANGE) VOUT = VS > 10 V
VDEN = 4.5 V
IIS = 6 mA
See Chapter 9.4
Sense signal maximum IIS(FAULT) 6 15 35 mA VIS = VIN = VDSEL = 0 V P_7.5.7
current in fault condition VOUT = VS > 10 V
VDEN = 4.5 V
See Figure 19
See Chapter 9.4
Sense pin maximum voltage VIS(AZ) 65 70 75 V IIS = 5 mA P_7.5.3
VS to IS See Figure 19
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
Current sense ratio kILIS0 -50% 330 +50% VIN = 4.5 V P_7.5.8
IL0 = 10 mA VDEN = 4.5 V
Current sense ratio kILIS1 -40% 300 +40% See Figure 20 P_7.5.9
IL1 = 0.05 A TJ = -40 °C; 150 °C
Current sense ratio kILIS2 -15% 300 +15% P_7.5.10
IL2 = 0.2 A
Current sense ratio kILIS3 -11% 300 +11% P_7.5.11
IL3 = 0.5 A
Current sense ratio kILIS4 -9% 300 +9% P_7.5.12
IL4 = 1 A
2)
kILIS derating with current and ∆kILIS -8 0 +8 % kILIS3 versus kILIS2 P_7.5.17
temperature See Figure 21
Diagnostic Timing in Normal Condition

Data Sheet 33 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Diagnostic Functions

Table 9 Electrical Characteristics: Diagnostics (cont’d)

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
2)
Current sense settling time to tsIS(ON) – – 150 µs VDEN = VIN= 0 to P_7.5.18
kILIS function stable after 4.5 V
positive input slope on both VS = 28 V
INput and DEN RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 0.5 A
See Figure 22
1)
Current sense settling time tsIS(ON_DEN) – – 10 µs VIN = 4.5 V P_7.5.19
with load current stable and VDEN = 0 to 4.5 V
transition of the DEN RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 0.5 A
See Figure 22
1)
Current sense settling time to tsIS(LC) – – 15 µs VIN = 4.5 V P_7.5.20
IIS stable after positive input VDEN = 4.5 V
slope on current load RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL2 = 0.2 A to IL =
IL3 = 0.5 A
See Figure 22
Diagnostic Timing in Open Load Condition
1)
Current sense settling time to tsIS(FAULT_OL_ – – 50 µs VIN = 0V P_7.5.22
IIS stable for open load OFF) VDEN = 0 to 4.5 V
detection in OFF state RIS = 1.2 kΩ
CSENSE < 100 pF
VOUT = VS = 28 V
2)
Current sense settling time to tsIS(FAULT_OL_ – 150 – µs VIN = 4.5 to 0V P_7.5.23
IIS stable for open load ON_OFF) VDEN = 4.5 V
detection in ON-OFF RIS = 1.2 kΩ
transition CSENSE < 100 pF
VOUT = VS = 28 V
See Figure 25
Diagnostic Timing in Overload Condition
1) 3) 4)
Current sense settling time to tsIS(FAULT) – – 150 µs VIN= VDEN = 0 to P_7.5.24
IIS stable for overload 4.5 V
detection RIS = 1.2 kΩ
CSENSE < 100 pF
VDS = 5 V
See Figure 18
2)
Current sense over current tsIS(OC_blank) – 350 – µs VIN = VDEN = 4.5 V P_7.5.32
blanking time RIS = 1.2 kΩ
CSENSE < 100 pF
VDS = 5 V to 0 V
See Figure 18

Data Sheet 34 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Diagnostic Functions

Table 9 Electrical Characteristics: Diagnostics (cont’d)

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
1)
Diagnostic disable time tsIS(OFF) – – 20 µs VIN = 4.5 V P_7.5.25
DEN transition to VDEN = 4.5 V to 0 V
IIS < 50% IL /kILIS RIS = 1.2 kΩ
CSENSE < 100 pF
IL = IL3 = 0.5 A
See Figure 22
Current sense settling time tsIS(ChC) – – 20 µs VIN0 = VIN1 = 4.5 V P_7.5.26
from one channel to another VDEN = 4.5 V
VDSEL = 0 to 4.5 V
RIS = 1.2 kΩ
CSENSE < 100 pF
IL(OUT0) = IL3 = 0.5 A
IL(OUT1) = IL2 = 0.2 A
See Figure 22
1) DSEL pin select channel 0 only.
2) Not subject to production test, specified by design
3) Test at TJ = -40°C only
4) Functional Test only

Data Sheet 35 Rev. 1.0, 2014-08-20

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 BTT6200-4EMA

Input Pins

8 Input Pins

8.1 Input Circuitry

The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to voltage
thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin is slowly
increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input
circuitry is compatible with PWM applications. Figure 27 shows the electrical equivalent input circuitry. In case the
pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via an
10kΩ input resistor.

IN

GND Input circuitry .vsd

Figure 27 Input Pin Circuitry

8.2 DEN / DSEL0,1 Pin

The DEN / DSEL0,1 pins enable and disable the diagnostic functionality of the device. The pins have the same
structure as the INput pins, please refer to Figure 27.

8.3 Input Pin Voltage

The IN, DSEL and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region,
set by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown
and depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.

Data Sheet 36 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Input Pins

8.4 Electrical Characteristics

Table 10 Electrical Characteristics: Input Pins

VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified).
Typical values are given at VS = 28 V, TJ = 25 °C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
INput Pins Characteristics
Low level input voltage range VIN(L) -0.3 – 0.8 V See Chapter 9.5 P_8.4.1
High level input voltage range VIN(H) 2 – 6 V See Chapter 9.5 P_8.4.2
1)
Input voltage hysteresis VIN(HYS) – 250 – mV P_8.4.3
See Chapter 9.5
Low level input current IIN(L) 1 10 25 µA VIN = 0.8 V P_8.4.4
High level input current IIN(H) 2 10 25 µA VIN = 5.5 V P_8.4.5
See Chapter 9.5
DEN Pin
Low level input voltage range VDEN(L) -0.3 – 0.8 V – P_8.4.6
High level input voltage range VDEN(H) 2 – 6 V – P_8.4.7
1)
Input voltage hysteresis VDEN(HYS) – 250 – mV P_8.4.8
Low level input current IDEN(L) 1 10 25 µA VDEN = 0.8V P_8.4.9
High level input current IDEN(H) 2 10 25 µA VDEN = 5.5 V P_8.4.10
DSEL Pins
Low level input voltage range VDSEL(L) -0.3 – 0.8 V – P_8.4.11
High level input voltage range VDSEL(H) 2 – 6 V – P_8.4.12
1)
Input voltage hysteresis VDSEL(HYS) – 250 – mV P_8.4.13
Low level input current IDSEL(L) 1 10 25 µA VDSEL = 0.8V P_8.4.14
High level input current IDSEL(H) 2 10 25 µA VDSEL = 5.5 V P_8.4.15
1) Not subject to production test, specified by design

Data Sheet 37 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Characterization Results

9 Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 28 V and 36 V over temperature range.

9.1 General Product Characteristics

P_4.2.3 P_4.2.4
5.000 4.000

4.900 3.900

4.800 3.800

4.700 3.700

4.600 3.600
[V]

[V]

4.500 3.500

4.400 3.400

4.300 3.300
8V 8V
4.200 28V 3.200 28V
36V 36V
4.100 3.100

4.000 3.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Minimum Functional Supply Voltage Undervoltage Threshold VS(UV) = f(TJ)

VS(OP)_MIN = f(TJ)

P_4.2.6 P_4.2.7, P_4.2.10

7.000 4.000

3.500
6.000

3.000
5.000

2.500
4.000
[mA]

[µA]

2.000

3.000
1.500

2.000
1.000

8V 8V
1.000
28V 0.500 28V
36V 36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Current Consumption for Whole Device with Load. Standby Current for Whole Device with Load.
All Channels Active IGND_2 = f(TJ;VS) IS(OFF) = f(TJ;VS)

Data Sheet 38 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Characterization Results

9.2 Power Stage

P_5.5.4 P_5.5.5
12.000 75.000

11.500 74.000

11.000 73.000

10.500 72.000

10.000 71.000
[mV]

[V]
9.500 70.000

9.000 69.000

8.500 68.000

8.000 67.000
8V 8V
28V 66.000 28V
7.500
36V 36V
7.000 65.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Output Voltage Drop Limitation at Low Load Current Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
VDS(NL) = f(TJ) and VDS(NL) = f(VS)

P_5.5.11 P_5.5.12
1.000 1.000

0.900 0.900

0.800 0.800

0.700 0.700

0.600 0.600
[V/µs]

[V/µs]

0.500 0.500

0.400 0.400

0.300 0.300

0.200 0.200
8V 8V

0.100 28V 0.100 28V

36V 36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Slew Rate at Turn ON Slew Rate at Turn OFF

dV/dtON = f(TJ;VS), RL = 47 Ω - dV/dtOFF = f(TJ;VS), RL = 47 Ω

Data Sheet 39 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Characterization Results

P_5.5.14 P_5.5.15
80.000 90.000

70.000 80.000

70.000
60.000

60.000
50.000

50.000
[ms]

[µs]
40.000
40.000

30.000
30.000

20.000
20.000
8V 8V
10.000 28V 10.000 28V
36V 36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Turn ON TON = f(TJ;VS), RL = 47 Ω Turn OFF TOFF = f(TJ;VS), RL = 47 Ω

P_5.5.19 P_5.5.20
2.50E‐04 3.00E‐04

2.50E‐04
2.00E‐04

2.00E‐04
1.50E‐04
[µJ]

[µJ]

1.50E‐04

1.00E‐04
1.00E‐04

5.00E‐05
8V 5.00E‐05 8V
28V 28V
36V 36V
0.00E+00 0.00E+00
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Switch ON Energy EON = f(TJ;VS), RL = 47 Ω Switch OFF Energy EOFF = f(TJ;VS), RL = 47 Ω

Data Sheet 40 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Characterization Results

9.3 Protection Functions

P_6.6.4
12.000

10.000

8.000
[A]

6.000

4.000

2.000 8V
28V
36V
0.000
‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C]

Overload Condition in the Low Voltage Area

IL5(SC) = f(TJ;VS);

Data Sheet 41 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Characterization Results

9.4 Diagnostic Mechanism

P_7.5.2
1.400
11.000

1.200
10.500

1.000 10.000

0.800 9.500
[µA]

[mA]
9.000
0.600

8.500
0.400

8.000
8V
0.200 8V
28V
7.500 28V
36V
36V
0.000
‐50 ‐25 0 25 50 75 100 125 150 7.000
Temperature [°C] ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C]

Current Sense at no Load Open Load Detection ON State Threshold

IIS = f(TJ;VS), IL = 0 IL(OL) = f(TJ;VS)

P_7.5.3 P_7.5.7
75.000 20.000

74.000 18.000

73.000 16.000

72.000 14.000

71.000 12.000
[mA]
[V]

70.000 10.000

69.000 8.000

68.000 6.000

67.000 4.000
8V 8V

66.000 28V 2.000 28V

36V 36V
65.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Sense Signal Maximum Voltage Sense Signal Maximum Current in Fault Condition
VIS(AZ) = f(TJ;VS) IIS(FAULT) = f(TJ;VS)

Data Sheet 42 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Characterization Results

9.5 Input Pins

P_8.4.1 P_8.4.2
1.340 1.530

1.320
1.520
1.300
1.510
1.280

1.260 1.500

1.240
[V]

[V]
1.490
1.220

1.200 1.480

1.180
1.470
1.160 8V 8V
28V 1.460 28V
1.140
36V 36V
1.120 1.450
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Input Voltage Threshold Input Voltage Threshold

VVIN(L)= f(TJ;VS) VVIN(H)= f(TJ;VS)

P_8.4.3 P_8.4.5
350.000 16.000

14.000
300.000

12.000
250.000

10.000
200.000
[mV]

[µA]

8.000

150.000
6.000

100.000
4.000

8V 8V
50.000
28V 2.000 28V
36V 36V
0.000 0.000
‐50 ‐25 0 25 50 75 100 125 150 ‐50 ‐25 0 25 50 75 100 125 150
Temperature [°C] Temperature [°C]

Input Voltage Hysteresis Input Current High Level

VIN(HYS) = f(TJ;VS) IIN(H) = f(TJ;VS)

Data Sheet 43 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Application Information

10 Application Information

Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.

VBAT
Voltage Regulator

OUT VS
GND
T1

Z
CVS

R OL
VDD VS
I/O R DEN DEN OUT0
C OUT

R PD
I/O Relay
R DSEL DSEL0
86 30

I/O R DSEL DSEL1 OUT1

COUT 85 87
RPD

Micro I/O IN0

R IN

controller
OUT2 +
I/O R IN IN1
C OUT E.C.U.
OUT3
R PD

-
I/O R IN IN2
R LED

I/O R IN IN3
OUT3 OUT4
COUT
A/D R SENSE IS
RPD

GND
R5W LED
GND
R IS

CSENSE
R GND

Application [Link]

Figure 28 Application Diagram with BTT6200-4EMA

Note: This is a very simplified example of an application circuit. The function must be verified in the real application.

Table 11 Bill of Material

Reference Value Purpose
RIN 10 kΩ Protection of the microcontroller during overvoltage, reverse polarity
Guarantee BTT6200-4EMA channels OFF during loss of ground
RDSEL 10 kΩ Protection of the microcontroller during overvoltage, reverse polarity
RDEN 10 kΩ Protection of the microcontroller during overvoltage, reverse polarity
RPD 47 kΩ Polarization of the output for short circuit to VS detection
Improve BTT6200-4EMA immunity to electomagnetic noise
ROL 1.5 kΩ Polarization of the output during open load in OFF detection
RIS 1.2 kΩ Sense resistor

Data Sheet 44 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Application Information

Table 11 Bill of Material (cont’d)

Reference Value Purpose
RSENSE 10 kΩ Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro
controller specification.
CSENSE 100 pF Sense signal filtering.
COUT 10nF Protection of the device during ESD and BCI
RLED 680 Ω Overvoltage protection of the LED. Value to be tuned with LED specification.
RGND 27 Ω Protection of the BTT6200-4EMA during overvoltage
D BAS21 Protection of the BTT6200-4EMA during reverse polarity
Z 58 V Zener Protection of the device during overvoltage
diode
CVS 100 nF Filtering of voltage spikes at the battery line
T1 Dual NPN/PNP Switch the battery voltage for open load in OFF diagnostic

10.1 Further Application Information

• Please contact us to get the pin FMEA

• Existing App. Notes
• For further information you may visit [Link]

Data Sheet 45 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Package Outlines

11 Package Outlines

Figure 29 PG-SSOP-24-14 EP (Plastic Dual Small Outline Package) (RoHS-Compliant)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Data Sheet 46 Rev. 1.0, 2014-08-20

PROFET™+ 24V
 BTT6200-4EMA

Revision History

12 Revision History

Revision Date Changes

1.0 2014-08-20 Creation of the document

Data Sheet 47 Rev. 1.0, 2014-08-20

PROFET™+ 24V
Edition 2014-08-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Legal Disclaimer for short-circuit capability

Infineon disclaims any warranties and liabilities, whether expressed nor implied, for any short-circuit failures below
the threshold limit.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office ([Link]).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.