Department of Electrical and ECSE-330B Electronic Circuits I

Computer Engineering

Outline of Chapter 5
• 1- Introduction to The Bipolar Junction Transistor
• 2- Active Mode Operation of BJT
• 3- DC Analysis of Active Mode BJT Circuits
• 4- BJT as an Amplifier
• 5- BJT Small Signal Models
• 6- CEA, CEA with RE, CBA, & CCA
• 7- Integrated Circuit Amplifiers

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 Department of Electrical and ECSE-330B Electronic Circuits I
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DC Analysis – Requires Assumptions

Find voltages & currents

Process:
a) Assume active mode
operation; VBE = 0.7V
b) Based on assumption,
calculate branch voltages
and currents
c) Verify active mode by
checking VCB > 0V

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Perform Analysis
IE 1mA
IB = = = 10 μA
β + 1 99 + 1
β 99
IC I C = αI E = IE = 1mA = 0.99mA
β +1 99 + 1
IB VC = 15 − I C RC = 15 − (0.99m )(5k ) = 10.05V

+ VB = 0 − I B RB = −(10 μA)(100k ) = − 1V
VBE=
-
0.7
Check VBE (0.7V) and VCB (reverse):
VE = VB − VBE = (−1) − 0.7 = −1.7V
VCB = VC − VB = 10.05 − (−1) = 11.05V
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 Department of Electrical and ECSE-330B Electronic Circuits I
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DC Analysis
Find voltages & currents

IC Process:
a) Assume ACTIVE mode
IB
operation; VBE = 0.7V
b) Based on assumption,
calculate branch voltages
and currents
IE c) Verify ACTIVE mode by
checking VCB

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DC Analysis
VE + 15 0 − VB
IE = IB =
1k 100k
VE + 15 0 − VB
IC I E = (β + 1)I B = (β + 1)
1k 100k
IB VE + 15 − V − 0 .7
V B = VE + 0 . 7 = (100) E
1k 100k

+ VE = − 7.85V I E = 7.15mA
0.7 Get:
- VB = − 7.15V I B = 71.5μA
IE β
I C = αI E = IE =
99
(7.15m ) = 7.08mA
β +1 100
VC = 15 − I C RC = 15 − (7.08m )(2k ) = 0.84V
Check: VCB = 7.99V (reverse biased) – OK
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Edge of Active Mode

•From previous slide, found:
VC = 15 − I C RC = 15 − (7.08m )RC
IC RC
•In general, increasing RC will not
IB change IC significantly
•More significant consequence of
+ increasing RC is a decrease of VC
0.7 •If RC is too large, decrease of VC will
-
IE
cause BJT to leave active mode and
transition to saturation mode
•Recall, active/saturation boundary
occurs for VC > VB; VCB > 0V
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Calculate Transition Point

-Use relationship for VC & IC:
IC RC VC = 15 − I C RC = 15 − (7.08mA)RC

IB -Use previous result for VB = -7.15V,

and write expression for RC as a
+
function of VC; solve for maximum
0.7
- RC in order to stay in active mode:
IE VC = VB ;15 − (7.08mA)RC = −7.15V
VB=-7.15V
-For active mode operation:
RC ≤ 3.13kΩ
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DC Analysis Comments

• Do not know a priori that BJT is in active mode

• Use approach similar to diode CVDM analysis
– Assume active mode operation (VBE = 0.7V)
– Solve circuit
– Verify active mode operation (check VCB)
• Generally never use exponential model for IC in
basic DC analysis
• Generally neglect Early Voltage effect in DC
analysis

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 Department of Electrical and ECSE-330B Electronic Circuits I
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pnp Transistor Biasing

Process:
a) Assume active mode
operation; VEB = 0.7V
IE b) Based on assumption,
calculate branch voltages
and currents
c) Verify active mode by
IB checking VBC ≥ 0V

IC

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Example: Find VB That Keeps BJT Active

• As VB decreases, IE & IC increase, VC
increases
• Minimum VB condition exists while
IE maintaining VEB = 0.7V
+
0.7 • In active mode: VE-VB = 0.7V
- 10 − VE
IE =
2k
IB VC 10 − (VB + 0.7 )
IC = = α I E = 0.99 ⋅
1k 2k
VC = 4.6 − 0.495VB
IC
At active/saturation boundary, VC = VB:
VB ≥ 3.08V
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 Department of Electrical and ECSE-330B Electronic Circuits I
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Transistor Sensitivity to IB
β is 107

RB = 100kΩ RB = 200kΩ
VB = 0.7V VB = 0.7V
IC 5 − 0 .7 5 − 0.7
IB = = 43μA IB = = 21.5μA
100k 200k
IB I C = βI B = (107)(43μA) IC = βI B = (107)(21.5μA)
= 4.601mA = 2.4075mA

+ VC = 10 − (4.601mA)(2kΩ) VC = 10 − (2.4075mA)(2kΩ)
0.7
- = 0.798 = 5.185

• Small changes in base current result in large current changes

in the collector: IC = βIB.
• Doubling the base current, causes the collector voltage to
decrease more than 6.5 times.
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Transistor Sensitivity to β
Find β condition to keep BJT active
5 − 0 .7
VB = 0.7V I B = = 43μA
100k
IC I C = βI B = β ⋅ 43μA

IB VC = 10 − I C (2k ) = 10 − 0.086 β
Let VC=VB=0.7
+
0.7
-
VC ≥ VB Ö β ≤ 108
• β can vary; want designs with DC
conditions that are insensitive to β
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Avoiding β Sensitivity
Find β condition to keep BJT active
10 − 4.7
VE = 4.7V I E = = 2.65mA
IE
2k
β
+ IC = α I E = 2.65mA
0.7 β +1
-
β
VC = I C (1kΩ) = (2.65) Let VC=VB=4V
IB β +1

IC
VC ≤ VB Ö β ≥ −2.96 OK for any β

• Putting resistance in the emitter

generally stabilizes DC biasing
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Transistor Biasing
• Typical resistor arrangement for
base-biasing of the BJT amplifier
configurations.
• Start by simplifying base network
RB1 & RB2

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Thevenin Circuit for Transistor Biasing

– VEQ: use superposition
RB 2
VEQ = 15 = 5V
+15V source RB1 + RB 2
RB1
VEQ = (− 10 ) = −6.67V
−10V source RB1 + RB 2

∴VEQ = −1.67V

– R: by inspection

REQ = RB1 RB 2 = 33.3kΩ

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Example
VE + 10 − 1.67 − VB
IE = IB =
3k 83.3k
VE + 10 − 1.67 − VB
IC I E = (β + 1)I B = (β + 1)
3k 83.3k
VE + 10 − V − 2.37
V B = V E + 0 .7 = (100 ) E
3k 83.3k
VE = − 4.03V I E = 1.99mA
IB +0.7 Get:
VB = − 3.33V I B = 19.9 μA
-
β 99
IE I C = αI E = IE = (1.99m ) = 1.97mA
β +1 100
VC = 15 − I C RC = 15 − (1.97m )(2k ) = 5.15V
Check: VCB = 8.48V (reverse biased) – OK
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Department of Electrical and ECSE-330B Electronic Circuits I
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AC-Signal Coupling
• Couple an input signal via
a coupling capacitor:
– C→∞ is open circuit at
DC, short circuit for AC
signals.
– If RB1 & RB2 not present,
BJT would not be DC
biased
– C prevents signal source
from having to provide
DC current
– Completely decouples DC
biasing from signal source
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 Department of Electrical and ECSE-330B Electronic Circuits I
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Two-Stage BJT DC Circuits Analysis

• Analysis approach: perform
IC2 DC analysis on individual
transistors.
• In this example, decouple at
IC1
VC1 - VB2 circuit connection
IB2
• Assume that IB2 = 0 and
calculate VB2
• Analyze each BJT separately
IE1 IE2 • Compare results for IB2 and IC1
• Through iteration/simulation,
can verify approximation
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 Department of Electrical and ECSE-330B Electronic Circuits I
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Q1 Analysis
2 assumptions: a) active mode, and b) no
current flowing into Q2 via VC1 node: IB2=0
IC1
− 0.7 + 10
VE = −0.7V IE = = 4.65mA
2k
IB1 β
IC = α I E = 4.65mA = 4.604mA
β +1
+
0.7 VC = 10 − I C (2kΩ)
-
= 10 − (4.605mA)(2kΩ) = 0.79V
IE1
VE1 = − 0.7V I E1 = 4.65mA
I B1 = 46.5μA
VC1 = 0.79V I C1 = 4.60mA
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 Department of Electrical and ECSE-330B Electronic Circuits I
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Q2 Analysis – Same Assumptions

2 assumptions: a) active mode, and b) no
current flowing into Q2 via VC1 node: IB2=0
IC2
VE = 0.79 − 0.7 = 0.09V
VC1
=0.79 0.09 + 10
IE = = 5.045mA
+ 2k
IB~0 0.7 β
- IC = α I E = 5.045mA = 4.995mA
β +1
VC = 10 − I C (1kΩ)
IE2 = 10 − (4.995mA)(1kΩ) = 4.995V

VE 2 = 0.09V I E 2 = 5.05mA
VC 2 = 4.995V I C 2 = 4.995mA
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Compute Q2 Base Current

From previous:
IC2
β
VC1 IC = α I E = 5.045mA = 4.995mA
=0.79 β +1
+
IB~ 0.7 IC
4.995mA
- IB = = = 50.45μA
50.45 β 99
μA
IE2

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Iterate to Get Exact Solution; Verify On Own

Add IB2 to IC1 current flowing in 2kΩ
I R = IC1 + I B2 = 4.604+ 0.0505= 4.6545mA
IR VC1 =10− I R (2kΩ)
=10− (4.6545mA)(2kΩ) = 0.691
Re-DO the calculations for Q2:
VE2 =0.691−0.7 = −0.01V
− 0.01 + 10
IE2 = = 4.995mA
2k
β
IC 2 = α I E 2 = 4.995mA = 4.945mA
β +1
VC 2 = 10 − I C 2 (1kΩ)
= 10 − (4.945mA)(1kΩ) = 4.945V

IC 2 4.945mA
I B2 = = = 49.95μA
β 99
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 Department of Electrical and ECSE-330B Electronic Circuits I
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DC Analysis of Active Mode

BJT Circuits – Summary
• General approach to active mode DC analysis
• Collector resistance and its effect on active mode
operation
• Sensitivity of BJT DC bias to variations in β, and how
to avoid it
• Practical biasing arrangement for coupling AC signals
• Analysis approach to DC analysis of
circuits involving multiple BJTs

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 Department of Electrical and ECSE-330B Electronic Circuits I
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Outline of Chapter 5
• 1- Introduction to The Bipolar Junction Transistor
• 2- Active Mode Operation of BJT
• 3- DC Analysis of Active Mode BJT Circuits
• 4- BJT as an Amplifier
• 5- BJT Small Signal Models
• 6- CEA, CEA with RE, CBA, & CCA
• 7- Integrated Circuit Amplifiers

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Department of Electrical and ECSE-330B Electronic Circuits I
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BJT Signal Analysis

• Input has DC
and AC components
• Output has DC and
AC components
• Because the two are
linearly super-
imposed, can separate
DC and AC analysis
as did with diode

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DC Analysis – Operating Point, IC vs VBE

• Kill AC sources
• Operating point determined
by VBE

iC
DC Operating Point

IC

VBE vBE
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BJT Signal Analysis – iC vs vBE

IC Consider superposition of
Operating an AC signal at the DC
Point
operating point

– Slope of iC-vBE curve at

operating defined as BJT
transconductance, gm

⎛ vBE ⎞
iC = I S exp⎜⎜ ⎟⎟
⎝ VT ⎠

VBE
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gm Operating Point Dependence

• Since gm represents slope at a ∂iC
fixed operating point, can gm ≡
∂vBE iC = I C
derive an expression for gm, at
this operating point ⎛ vBE ⎞
iC = I S exp⎜⎜ ⎟⎟
⎝ VT ⎠
• Take derivative and simplify ∂i ⎛ VBE ⎞ 1
• Final expression for gm
C
= I S exp⎜⎜ ⎟⎟ ⋅
∂vBE iC = I C ⎝ VT ⎠ VT
indicates BJT operating point
dependence based on IC, the IC
DC collector current. IC
gm =
VT
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BJT Small Signal – iC vs vBE

IC Define transconductance
Operating
as slope of the iC-vBE curve
Point Slope at an operating point:
= gm

In the small signal limit,

ic(t) can write expression for
gm as follow:
ic (t )
gm =
vbe (t )

gm determines the BJT gain

vbe(t) VBE
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Common Emitter BJT Amplifier

• Apply small signal
at base: vs(t)=vbe(t)
ic (t ) = g m vbe (t ) • Results in signal
current, ic(t), at
collector
• Signal current
through RC
0 − vc (t) = ic RC produces output
vc (t) = −gmvbe (t)RC voltage at BJT
collector terminal

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Common Emitter BJT Voltage Gain

• Define voltage gain:
vc (t )
ic (t ) = g m vbe (t ) AV = = − g m RC
vbe (t )

0 − vc (t) = ic RC
vc (t) = −gmvbe (t)RC

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Common Emitter BJT Voltage Gain

• From SPICE:

Input

Output

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