Applications of high efficiency
FELs for EUV lithography
Patrick Naulleau
Center for X-ray Optics
Lawrence Berkeley National Laboratory
Physics & Applications of High Efficiency Free-Electron Lasers Workshop, Apr 11-13, 2018, UCLA
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Outline
• Semiconductor industry trends
• Introduction to EUV Lithography
• Future power needs
• Key FEL source requirements
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Semiconductor industry is huge
economic driver
$59 Billion
Semiconductor
R&D (2017) $412 Billion
Semiconductor
device market
(2017) $2.0 Trillion
Global electronics
market (2017)
SIA, [Link]
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“By 2020, [expected] cost of between $15
and $20 billion for a leading-edge fab”
EE Times
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Industry growth enabled by Moore’s Law:
transistors double every two years
1.E+11
Number of Transistors
Intel 62 core Xeon
1.E+09 Intel Itanium2
Intel Pentium 4
1.E+07
Intel Pentium
1.E+05 Intel 386
Intel 8086
1.E+03 Intel 8008
1970 1980 1990 2000 2010 2020
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The other half of Moore’s Law:
density increase at shrinking cost
Normalized cost
1.00
per transistor
0.10
0.01
2000 2004 2008 2012 2016
Data from Intel ([Link]
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128 GB microSD
$59.99
Would have cost
$256 billion in 1970
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Lithography drives shrink
Mask
Illumination
Demagnifying Wafer
lens
Res /NA
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Moore’s Law driven by wavelength shrink
1.E+11
Number of Transistors
White
438 nm
365 nm
1.E+09
1.E+07
13.5 nm
193i nm
193 nm
248nm
1.E+05
1.E+03
1970 1980 1990 2000 2010 2020
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How does EUV lithography work?
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EUVL: optical lithography at = 13.5 nm
Reticle
Illuminator Projection
Intermediate optics
focus
Source
Plasma
Collector
Wafer
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Near term source power requirements
Wafer Throughput wafer/h 145
Total wafer time sec 24.8
Stage motion overhead sec 18
Wafer exposure time sec 6.8
Wafer diameter mm 300
Wafer fill factor % 89%
Required
Resist Sensitivity
Required Power at Wafer
mJ/cm^2
W
15
1.38
source power
POB reflectivity (0.66^6) % 8.27% = 250W
Mask reflectivity % 62%
Illuminator reflectivity (0.66^4) % 18.97%
Overfill efficiency % 75%
Pellicle efficiency % 76%
Total Optical Efficiency % 0.55%
Required collected source power W 250
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LPP source status
ASML, SPIE Advanced Lithography Conference 2018
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Future source power needs?
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Key variable assumptions in 250W
number
• Throughput = 145 Wafers/hr
• Wafer size = 300 mm
• Dose = 15 mJ/cm^2
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Source power requirements expected
to grow significantly in the future
Double patterning
• Throughput
= 220 wafers/hr
• Stage overhead
= 12 seconds
1.6x more power
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Source power requirements expected
to grow significantly in the future
450-mm wafers
• Throughput
= 105 wafers/hr
• Stage overhead*
= 12 seconds
1.5x more power
* Normalized to 300-mm wafer
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Source power requirements expected
to grow significantly in the future
Dose
• 15 mJ/cm2
likely not
enough in
the future
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Source power requirements expected
to grow significantly in the future
Dose
• 15 mJ/cm2
likely not
enough in
the future
𝐿𝑊𝑅 ∝ 1 𝑑𝑜𝑠𝑒
2-4x more power
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Depending on resist performance,
future power needs could range
from 500W to 2000W
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Other requirements
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Size: about the size of a shipping container
• Allowable
source footprint:
~ 10m x 3m
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Reliability: Require > 95% uptime
Even better uptime required
if driving multiple tools
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Source power stability
Need <1% with 1 ms
integration window
• Implies rep rate
>1kHz x FPN^2
• 30% pulse noise
=> rep rate > 900kHz
FPN = fractional pulse noise
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Pulse length
• Multilayer BW limits
require pulse > 2.5 fs
• Longer is better to avoid
optics damage issues
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Bandwidth
Multilayer to the 11th power
• Multilayer mirrors require
bandwidth
< +/-0.14nm (1%)
• Narrower bandwidth =
greater effective optical
throughput
• +/-0.02nm BW would
provide 28% effective
power boost
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Polarization
Horizontal
Vertical
• Linear polarized light
causes significant
imaging anisotropy
• If it can be
manipulated,
polarization can be
viewed as asset
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Coherence
• No longitudinal
coherence needed
• No lateral coherence
needed (coherence
must be destroyed)
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Coherent Partial coherence
Defocus
Berkeley Lab | MSD Materials Sciences Division Data courtesy of K. Goldberg, A. Wojdyla, LBNL
Summary
• EUV is on its way
• We need creative solutions
to carry the technology well
into the future
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