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Transistor MOSFET - 60NF06

The document describes the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06. It has a maximum drain current of 60A at 25°C, a maximum drain-source on-resistance of 0.016 ohms, and is suitable for use as a primary switch in high-efficiency DC-DC converters and motor controls. Its applications include DC-DC converters, UPS systems, automotive systems, and it has maximum ratings of 60V drain-source voltage, 60A continuous drain current, and 175°C maximum operating junction temperature.

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1K views2 pages

Transistor MOSFET - 60NF06

The document describes the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06. It has a maximum drain current of 60A at 25°C, a maximum drain-source on-resistance of 0.016 ohms, and is suitable for use as a primary switch in high-efficiency DC-DC converters and motor controls. Its applications include DC-DC converters, UPS systems, automotive systems, and it has maximum ratings of 60V drain-source voltage, 60A continuous drain current, and 175°C maximum operating junction temperature.

Uploaded by

araragi koyomi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 60NF06

FEATURES
·Drain Current –ID=60A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.016Ω(Max)
·Fast Switching

DESCRIPTION
Suitable as primary switch in advanced high-efficiency isolated
DC-DC converters for Telecom and Computer application. It is
also intended for any application with low gate charge drive
requirements .

APPLICATIONS
·High-efficiency DC-DC converters
·UPS and motor control
·Automotive

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 60 V

VGS Gate-Source Voltage-Continuous ±20 V

ID Drain Current-Continuous 60 A

IDM Drain Current-Single Pluse (tp≤10μs) 240 A

PD Total Dissipation @TC=25℃ 110 W

TJ Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -65~175 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.36 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc Website：[Link]
INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 60NF06

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 30A 0.016 Ω

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

VDS= 60V; VGS=0 1


IDSS Zero Gate Voltage Drain Current μA
VDS= 60V; VGS=0; Tj= 125℃ 10

VSD Forward On-Voltage IS= 60A; VGS=0 1.3 V

isc Website：[Link]

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