Si4835BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) Qg (Typ) D Advanced High Cell Density Process
0.018 @ VGS = 10 V
D 100% Rg Tested
9.6
30 25
0.030 @ VGS = 4.5 V 7.5 APPLICATIONS
D Load Switches
Notebook PCs
Desktop PCs

S
SO-8

S 1 8 D

S 2 7 D G

S 3 6 D

G 4 5 D

Top View D

P-Channel MOSFET

Ordering Information: Si4835BDY

Si4835BDY-T1 (with Tape and Reel)
Si4835BDYE3 (Lead (Pb)-Free)
Si4835BDY-T1E3 (Lead (Pb)-Free with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "25

TA = 25_C 9.6 7.4

Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 7.7 5.9
A
Pulsed Drain Current IDM 50

continuous Source Current (Diode Conduction)a IS 2.1 1.3

TA = 25_C 2.5 1.5

Maximum Power Dissipationa PD W
TA = 70_C 1.6 0.9

Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 39 50
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 70 85 C/W
_C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22

Notes
a. Surface Mounted on 1 x 1 FR4 Board.

Document Number: 72029 [Link]

S-41912Rev. D, 25-Oct-04 1
Si4835BDY
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "25 V "100 nA

VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 5
On-State Drain Currenta ID(on) VDS v 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 9.6 A 0.014 0.018
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = 4.5 V, ID = 7.5 A 0.023 0.030
Forward Transconductancea gfs VDS = 15 V, ID = 9.6 A 30 S
Diode Forward Voltagea VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 V

Dynamicb

Total Gate Charge Qg 25 37

Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 9.6 A 6.5 nC
Gate-Drain Charge Qgd 12.5
Gate Resistance Rg 1.0 2.9 4.9 W
Turn-On Delay Time td(on) 15 25
Rise Time tr VDD = 15 V, RL = 15 W 13 20
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, Rg = 6 W 60 100 ns
Fall Time tf 45 70
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/ms 45 80

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

50 50
VGS = 10 thru 5 V TC = 55_C

25_C
40 40
4V
125_C
I D Drain Current (A)

I D Drain Current (A)

30 30

20 20

10 10
3V

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5

VDS Drain-to-Source Voltage (V) VGS Gate-to-Source Voltage (V)

[Link] Document Number: 72029

2 S-41912Rev. D, 25-Oct-04
 Si4835BDY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance
0.05 3200
r DS(on) On-Resistance ( W )

0.04

C Capacitance (pF)
2400
Ciss
0.03
VGS = 4.5 V
1600

0.02
VGS = 10 V
800 Coss
0.01
Crss

0.00 0
0 10 20 30 40 50 0 6 12 18 24 30

ID Drain Current (A) VDS Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.6
VDS = 15 V VGS = 10 V
V GS Gate-to-Source Voltage (V)

ID = 9.6 A ID = 9.6 A
8 1.4
rDS(on) On-Resiistance
(Normalized)

6 1.2

4 1.0

2 0.8

0 0.6
0 10 20 30 40 50 50 25 0 25 50 75 100 125 150
Qg Total Gate Charge (nC) TJ Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

60 0.05

0.04
r DS(on) On-Resistance ( W )
I S Source Current (A)

ID = 9.6 A
TJ = 150_C 0.03
10

0.02

TJ = 25_C

0.01

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)

Document Number: 72029 [Link]

S-41912Rev. D, 25-Oct-04 3
Si4835BDY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.6 80

0.4
60
V GS(th) Variance (V)

ID = 250 mA
0.2

Power (W)
40

0.0

20
0.2

0.4 0
50 25 0 25 50 75 100 125 150 102 101 1 10 100 600
TJ Temperature (_C) Time (sec)

Safe Operating Area

100
IDM Limited
*rDS(on) Limited P(t) = 0.0001

10
I D Drain Current (A)

P(t) = 0.001

ID(on) P(t) = 0.01

1
Limited
P(t) = 0.1

P(t) = 1
TA = 25_C
0.1 Single Pulse P(t) = 10
dc
BVDSS Limited
0.01
0.1 1 10 100
VDS Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
104 103 102 101 1 10 100 600
Square Wave Pulse Duration (sec)

[Link] Document Number: 72029

4 S-41912Rev. D, 25-Oct-04
 Si4835BDY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
104 103 102 101 1 10
Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
[Link]

Document Number: 72029 [Link]

S-41912Rev. D, 25-Oct-04 5
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000 [Link]

Revision: 18-Jul-08 1