Si4435BDY

New Product Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) D Advanced High Cell Density Process
0.020 @ VGS = - 10 V - 9.1 APPLICATIONS
- 30
0.035 @ VGS = - 4.5 V - 6.9 D Load Switches
D Battery Switch

S
SO-8

S 1 8 D
G
S 2 7 D

S 3 6 D

G 4 5 D
D
Top View P-Channel MOSFET

Ordering Information: Si4435BDY

Si4435BDY-T1 (with Tape and Reel

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS "20

TA = 25_C - 9.1 -7
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C - 7.3 - 5.6
A
Pulsed Drain Current IDM - 50

continuous Source Current (Diode Conduction)a IS - 2.1 - 1.25

TA = 25_C 2.5 1.5

Maximum Power Dissipationa PD W
TA = 70_C 1.6 0.9

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 40 50
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 70 85 _C/W
C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22

Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.

Document Number: 72123 [Link]

S-03370—Rev. A, 03-Mar-03 1
Si4435BDY
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA -1 -3 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = - 24 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 24 V, VGS = 0 V, TJ = 55_C - 25
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 40 A
VGS = - 10 V, ID = - 9.1 A 0.015 0.020
Drain-Source On State Resistancea
Drain Source On-State rDS(on)
DS( ) W
VGS = - 4.5 V, ID = - 6.9 A 0.025 0.035

Forward Transconductancea gfs VDS = - 10 V, ID = - 9.1 A 24 S

Diode Forward Voltagea VSD IS = - 2.1 A, VGS = 0 V - 0.8 - 1.2 V

Dynamicb
Total Gate Charge Qg 33 70
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A 5.8 nC
Gate-Drain Charge Qgd 8.6
Turn-On Delay Time td(on) 10 15
Rise Time tr 15 25
VDD = - 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 110 170 ns
Fall Time tf 70 110
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, di/dt = 100 A/ms 60 90

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

50 50
VGS = 10 thru 6 V
TC = - 55_C
5V
40 40 25_C

4V
I D - Drain Current (A)

I D - Drain Current (A)

30 30
125_C

20 20

10 3V 10

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

[Link] Document Number: 72123

2 S-03370—Rev. A, 03-Mar-03
 Si4435BDY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance
0.040 2400

0.035
r DS(on) - On-Resistance ( W )

VGS = 4.5 V

C - Capacitance (pF)
0.030 1800
Ciss
0.025

0.020 VGS = 10 V 1200

0.015

0.010 600
Coss
0.005
Crss
0.000 0
0 10 20 30 40 50 0 5 10 15 20 25 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)

ID = 9.1 A ID = 9.1 A
r DS(on) - On-Resistance (W)

8 1.4
(Normalized)

6 1.2

4 1.0

2 0.8

0 0.6
0 10 20 30 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

50 0.10

0.08
r DS(on) - On-Resistance ( W )
I S - Source Current (A)

TJ = 150_C
10 0.06
ID = 9.1 A

TJ = 25_C 0.04

0.02

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Document Number: 72123 [Link]

S-03370—Rev. A, 03-Mar-03 3
Si4435BDY
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power
0.6 30

0.4 ID = 250 mA 24
V GS(th) Variance (V)

18

Power (W)
0.2

0.0 12

- 0.2 6

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10 -2 10 -1 1 10 100 600
TJ - Temperature (_C) Time (sec)

Safe Operating Area, Junction-to-Ambient

100 IDM Limited
rDS(on) Limited

P(t) = 0.0001

10
I D - Drain Current (A)

P(t) = 0.001

1 ID(on) P(t) = 0.01

Limited
P(t) = 0.1

P(t) = 1
TA = 25_C P(t) = 10
0.1 Single Pulse
dc

BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)

[Link] Document Number: 72123

4 S-03370—Rev. A, 03-Mar-03
 Si4435BDY
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)

Document Number: 72123 [Link]

S-03370—Rev. A, 03-Mar-03 5
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[Link]

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